Electronic structure and STM images simulation of defects on hBN/ black-phosphorene heterostructures: A theoretical study

By first principles calculations which include van der Waals interactions, we studied the electronic structure of hexagonal boron-nitride/black-phosphorene heterostructures (hBN/BP). In particular the role of several kind of defects on the electronic properties of black-phosphorene monolayer and hBN...

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Autores:

Tipo de recurso:

Fecha de publicación:

2018

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/4577

Acceso en línea:

http://hdl.handle.net/11407/4577

Palabra clave:

Black-phosphorene; Boron nitride; Heterostructures; STM
Boron nitride; Calculations; Electronic properties; Electronic structure; Heterojunctions; Monolayers; Nitrides; Scanning tunneling microscopy; Vacancies; Van der Waals forces; Black-phosphorene; Experimental characterization; First-principles calculation; Hexagonal boron nitride; Novel materials; Single vacancies; Theoretical study; Van Der Waals interactions; Defects

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http://purl.org/coar/access_right/c_16ec