Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching
In the electronic devices based on porous silicon (PS) is important understand the physical mechanisms governing the electrical behaviour in the PS/c-Si structure. In order to investigate the conduction mechanisms in the PS/p-Si heterojunction, we prepared the PS by electrochemical etching. The temp...
- Autores:
-
Fonthal Rico, Faruk
Oliveros Ortiz, Edward Steven's
Chavarria Varon, Mario Andres
- Tipo de recurso:
- Article of journal
- Fecha de publicación:
- 2016
- Institución:
- Universidad Autónoma de Occidente
- Repositorio:
- RED: Repositorio Educativo Digital UAO
- Idioma:
- eng
- OAI Identifier:
- oai:red.uao.edu.co:10614/11108
- Palabra clave:
- Dieléctricos
Relajación dieléctrica
Nanosilicio
Nanoelectrónica
Dielectrics
Dielectric relaxation
Nanosilicon
Nanoelectronics
- Rights
- closedAccess
- License
- Derechos Reservados - Universidad Autónoma de Occidente
| id |
REPOUAO2_1d5f5b1671ce3f0d54a35019d814a1b7 |
|---|---|
| oai_identifier_str |
oai:red.uao.edu.co:10614/11108 |
| network_acronym_str |
REPOUAO2 |
| network_name_str |
RED: Repositorio Educativo Digital UAO |
| repository_id_str |
|
| dc.title.eng.fl_str_mv |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching |
| dc.title.alternative.spa.fl_str_mv |
Relajación dieléctrica y dependiente de la temperatura del silicio poroso preparado mediante grabado electroquímico |
| title |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching |
| spellingShingle |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching Dieléctricos Relajación dieléctrica Nanosilicio Nanoelectrónica Dielectrics Dielectric relaxation Nanosilicon Nanoelectronics |
| title_short |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching |
| title_full |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching |
| title_fullStr |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching |
| title_full_unstemmed |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching |
| title_sort |
Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching |
| dc.creator.fl_str_mv |
Fonthal Rico, Faruk Oliveros Ortiz, Edward Steven's Chavarria Varon, Mario Andres |
| dc.contributor.author.none.fl_str_mv |
Fonthal Rico, Faruk |
| dc.contributor.author.spa.fl_str_mv |
Oliveros Ortiz, Edward Steven's Chavarria Varon, Mario Andres |
| dc.subject.armarc.spa.fl_str_mv |
Dieléctricos Relajación dieléctrica Nanosilicio Nanoelectrónica |
| topic |
Dieléctricos Relajación dieléctrica Nanosilicio Nanoelectrónica Dielectrics Dielectric relaxation Nanosilicon Nanoelectronics |
| dc.subject.armarc.eng.fl_str_mv |
Dielectrics Dielectric relaxation Nanosilicon Nanoelectronics |
| description |
In the electronic devices based on porous silicon (PS) is important understand the physical mechanisms governing the electrical behaviour in the PS/c-Si structure. In order to investigate the conduction mechanisms in the PS/p-Si heterojunction, we prepared the PS by electrochemical etching. The temperature dependence of the porous silicon was studied in the range from 300 K to 393 K, in a range until 10 V. On the other hand, the AC electrical measurements were performed from 5 Hz to 107 Hz. The calculated activation energies were close to 0,42 eV at 2 V. The physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found the dielectric behavior of the sample; the relaxation region is presented at high frequency |
| publishDate |
2016 |
| dc.date.issued.spa.fl_str_mv |
2016 |
| dc.date.accessioned.none.fl_str_mv |
2019-09-16T20:03:33Z |
| dc.date.available.none.fl_str_mv |
2019-09-16T20:03:33Z |
| dc.type.spa.fl_str_mv |
Artículo de revista |
| dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_2df8fbb1 |
| dc.type.coarversion.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| dc.type.coar.eng.fl_str_mv |
http://purl.org/coar/resource_type/c_6501 |
| dc.type.content.eng.fl_str_mv |
Text |
| dc.type.driver.eng.fl_str_mv |
info:eu-repo/semantics/article |
| dc.type.redcol.eng.fl_str_mv |
http://purl.org/redcol/resource_type/ARTREF |
| dc.type.version.eng.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| format |
http://purl.org/coar/resource_type/c_6501 |
| status_str |
publishedVersion |
| dc.identifier.citation.eng.fl_str_mv |
Rico, F. F., Oliveros, E. S., & Chavarria, M. (2016). Temperature-Dependent and Dielectric Relaxation of Porous Silicon Prepared by Electrochemical Etching. ECS Transactions, 75(5), 271-277. https://doi.org/10.1149/ma2016-02/27/1844 |
| dc.identifier.issn.spa.fl_str_mv |
1938-5862 (en línea) 1938-6737 (impresa) |
| dc.identifier.uri.none.fl_str_mv |
http://hdl.handle.net/10614/11108 |
| dc.identifier.doi.spa.fl_str_mv |
https://doi.org/10.1149/ma2016-02/27/1844 |
| identifier_str_mv |
Rico, F. F., Oliveros, E. S., & Chavarria, M. (2016). Temperature-Dependent and Dielectric Relaxation of Porous Silicon Prepared by Electrochemical Etching. ECS Transactions, 75(5), 271-277. https://doi.org/10.1149/ma2016-02/27/1844 1938-5862 (en línea) 1938-6737 (impresa) |
| url |
http://hdl.handle.net/10614/11108 https://doi.org/10.1149/ma2016-02/27/1844 |
| dc.language.iso.eng.fl_str_mv |
eng |
| language |
eng |
| dc.relation.citationendpage.none.fl_str_mv |
277 |
| dc.relation.citationstartpage.none.fl_str_mv |
271 |
| dc.relation.citationvolume.none.fl_str_mv |
Volumen 75 Número 5 |
| dc.relation.cites.eng.fl_str_mv |
Rico, F. F., Oliveros, E. S., & Chavarria, M. (2016). Temperature-Dependent and Dielectric Relaxation of Porous Silicon Prepared by Electrochemical Etching. ECS Transactions, 75(5), 271-277. https://doi.org/10.1149/ma2016-02/27/1844 |
| dc.relation.ispartofjournal.eng.fl_str_mv |
Ecs Transactions |
| dc.relation.references.none.fl_str_mv |
Koshida, N., Echizenya, K., Kiuchi, Y. Impedance Spectra of P-Type Porous Si-Electrolyte Interfaces (1986) Journal of the Electrochemical Society, 133 (11), pp. 2283-2287. Cited 32 times. doi: 10.1149/1.2108395 Fonthal, F. Electro Ceramic Properties of Porous Silicon Thin Films on P-Type Crystalline Silicon (2011) Advances and Applications in Electroceramics, 226, pp. 19-24. ISBN: 978-111814448-0; 978-111805999-9 doi: 10.1002/9781118144480.ch3 Cherif, A., Jomni, S., Hannachi, R., Beji, L. Electrical investigation of the Al/porous Si/p+-Si heterojunction (2013) Physica B: Condensed Matter, 409 (1), pp. 10-15. Cited 9 times. doi: 10.1016/j.physb.2012.10.014 Dariani, R.S., Tavakoli, F. Conductivity and relaxation time of porous silicon using the Kramers-Kronig relation (2015) Physica B: Condensed Matter, 456, pp. 312-320. Cited 6 times. doi: 10.1016/j.physb.2014.08.042 Theodoropoulou, M., Karahaliou, P.K., Krontiras, C.A., Georga, S.N., Xanthopoulos, N., Pisanias, M.N., Tsamis, C., (...), Nassiopoulou, A.G. Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous silicon/p-cSi structures (2004) Journal of Applied Physics, 96 (12), art. no. 6, pp. 7637-7642. Cited 22 times. doi: 10.1063/1.1815388 Bazrafkan, I., Dariani, R.S. Electrical behavior of free-standing porous silicon layers (2009) Physica B: Condensed Matter, 404 (12-13), pp. 1638-1642. Cited 15 times. doi: 10.1016/j.physb.2009.01.040 Chavarria, M.A., Fonthal, F. Electrical investigation of porous silicon/p-Si heterojunction prepared by electrochemical etching (2016) ECS Journal of Solid State Science and Technology, 5 (4), pp. P3172-P3175. Cited 3 times. doi: 10.1149/2.0241604jss Gülnahar, M., Karacali, T., Efeoʇlu, H. Porous Si based Al schottky structures on p+-Si: A possible way for nano schottky fabrication (2015) Electrochimica Acta, 168, pp. 41-49. Cited 12 times. doi: 10.1016/j.electacta.2015.03.204 Azim-Araghi, M.E., Bisadi, Z. Investigation of morphology, electrical behavior (AC and DC) and CO 2 gas sensitivity of porous silicon deposited with nanolayers of bromo aluminum phthalocyanine (2012) EPJ Applied Physics, 58 (2). Cited 2 times. doi: 10.1051/epjap/2012110472 Saad, K.B., Saadoun, M., Hamzaoui, H., Bessaïs, B. AC impedance spectroscopy of porous silicon thin films containing metallic cations (2008) Materials Science and Engineering C, 28 (5-6), pp. 623-627. Cited 5 times. doi: 10.1016/j.msec.2007.10.052 Archer, M., Christophersen, M., Fauchet, P.M. Electrical porous silicon chemical sensor for detection of organic solvents (2005) Sensors and Actuators, B: Chemical, 106 (1 SPEC. ISS.), pp. 347-357. Cited 104 times. doi: 10.1016/j.snb.2004.08.016 Axelrod, E., Givant, A., Shappir, J., Feldman, Y., Sa'ar, A. Dielectric relaxation and transport in porous silicon (2002) Physical Review B - Condensed Matter and Materials Physics, 65 (16), art. no. 165429, pp. 1654291-1654297. Cited 41 times |
| dc.rights.spa.fl_str_mv |
Derechos Reservados - Universidad Autónoma de Occidente |
| dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_14cb |
| dc.rights.uri.eng.fl_str_mv |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
| dc.rights.accessrights.eng.fl_str_mv |
info:eu-repo/semantics/closedAccess |
| dc.rights.creativecommons.spa.fl_str_mv |
Atribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0) |
| rights_invalid_str_mv |
Derechos Reservados - Universidad Autónoma de Occidente https://creativecommons.org/licenses/by-nc-nd/4.0/ Atribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0) http://purl.org/coar/access_right/c_14cb |
| eu_rights_str_mv |
closedAccess |
| dc.format.eng.fl_str_mv |
application/pdf |
| dc.format.extent.spa.fl_str_mv |
páginas 271-277 |
| dc.coverage.spatial.none.fl_str_mv |
Universidad Autónoma de Occidente. Calle 25 115-85. Km 2 vía Cali-Jamundí |
| dc.publisher.eng.fl_str_mv |
ECS - The Electrochemical Society |
| institution |
Universidad Autónoma de Occidente |
| bitstream.url.fl_str_mv |
https://red.uao.edu.co/bitstreams/c8081b5e-6eb9-4de2-865e-2ad3dacce3ba/download https://red.uao.edu.co/bitstreams/d7617ed9-eea0-4efb-a2dc-bf714eff3df6/download |
| bitstream.checksum.fl_str_mv |
4460e5956bc1d1639be9ae6146a50347 20b5ba22b1117f71589c7318baa2c560 |
| bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 |
| repository.name.fl_str_mv |
Repositorio Digital Universidad Autonoma de Occidente |
| repository.mail.fl_str_mv |
repositorio@uao.edu.co |
| _version_ |
1814259804937388032 |
| spelling |
Fonthal Rico, Farukvirtual::1753-1Oliveros Ortiz, Edward Steven's05a8bf30e1c1f86bea3e1d9482182aedChavarria Varon, Mario Andres02cdb8ba099e6e16cdf5ffab7b656eb1Universidad Autónoma de Occidente. Calle 25 115-85. Km 2 vía Cali-Jamundí2019-09-16T20:03:33Z2019-09-16T20:03:33Z2016Rico, F. F., Oliveros, E. S., & Chavarria, M. (2016). Temperature-Dependent and Dielectric Relaxation of Porous Silicon Prepared by Electrochemical Etching. ECS Transactions, 75(5), 271-277. https://doi.org/10.1149/ma2016-02/27/18441938-5862 (en línea)1938-6737 (impresa)http://hdl.handle.net/10614/11108https://doi.org/10.1149/ma2016-02/27/1844In the electronic devices based on porous silicon (PS) is important understand the physical mechanisms governing the electrical behaviour in the PS/c-Si structure. In order to investigate the conduction mechanisms in the PS/p-Si heterojunction, we prepared the PS by electrochemical etching. The temperature dependence of the porous silicon was studied in the range from 300 K to 393 K, in a range until 10 V. On the other hand, the AC electrical measurements were performed from 5 Hz to 107 Hz. The calculated activation energies were close to 0,42 eV at 2 V. The physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found the dielectric behavior of the sample; the relaxation region is presented at high frequencyapplication/pdfpáginas 271-277engECS - The Electrochemical SocietyDerechos Reservados - Universidad Autónoma de Occidentehttps://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/closedAccessAtribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0)http://purl.org/coar/access_right/c_14cbTemperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etchingRelajación dieléctrica y dependiente de la temperatura del silicio poroso preparado mediante grabado electroquímicoArtículo de revistahttp://purl.org/coar/resource_type/c_6501http://purl.org/coar/resource_type/c_2df8fbb1Textinfo:eu-repo/semantics/articlehttp://purl.org/redcol/resource_type/ARTREFinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/version/c_970fb48d4fbd8a85DieléctricosRelajación dieléctricaNanosilicioNanoelectrónicaDielectricsDielectric relaxationNanosiliconNanoelectronics277271Volumen 75Número 5Rico, F. F., Oliveros, E. S., & Chavarria, M. (2016). Temperature-Dependent and Dielectric Relaxation of Porous Silicon Prepared by Electrochemical Etching. ECS Transactions, 75(5), 271-277. https://doi.org/10.1149/ma2016-02/27/1844Ecs TransactionsKoshida, N., Echizenya, K., Kiuchi, Y. Impedance Spectra of P-Type Porous Si-Electrolyte Interfaces (1986) Journal of the Electrochemical Society, 133 (11), pp. 2283-2287. Cited 32 times. doi: 10.1149/1.2108395Fonthal, F. Electro Ceramic Properties of Porous Silicon Thin Films on P-Type Crystalline Silicon (2011) Advances and Applications in Electroceramics, 226, pp. 19-24. ISBN: 978-111814448-0; 978-111805999-9 doi: 10.1002/9781118144480.ch3Cherif, A., Jomni, S., Hannachi, R., Beji, L. Electrical investigation of the Al/porous Si/p+-Si heterojunction (2013) Physica B: Condensed Matter, 409 (1), pp. 10-15. Cited 9 times. doi: 10.1016/j.physb.2012.10.014Dariani, R.S., Tavakoli, F. Conductivity and relaxation time of porous silicon using the Kramers-Kronig relation (2015) Physica B: Condensed Matter, 456, pp. 312-320. Cited 6 times. doi: 10.1016/j.physb.2014.08.042Theodoropoulou, M., Karahaliou, P.K., Krontiras, C.A., Georga, S.N., Xanthopoulos, N., Pisanias, M.N., Tsamis, C., (...), Nassiopoulou, A.G. Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous silicon/p-cSi structures (2004) Journal of Applied Physics, 96 (12), art. no. 6, pp. 7637-7642. Cited 22 times. doi: 10.1063/1.1815388Bazrafkan, I., Dariani, R.S. Electrical behavior of free-standing porous silicon layers (2009) Physica B: Condensed Matter, 404 (12-13), pp. 1638-1642. Cited 15 times. doi: 10.1016/j.physb.2009.01.040Chavarria, M.A., Fonthal, F. Electrical investigation of porous silicon/p-Si heterojunction prepared by electrochemical etching (2016) ECS Journal of Solid State Science and Technology, 5 (4), pp. P3172-P3175. Cited 3 times. doi: 10.1149/2.0241604jssGülnahar, M., Karacali, T., Efeoʇlu, H. Porous Si based Al schottky structures on p+-Si: A possible way for nano schottky fabrication (2015) Electrochimica Acta, 168, pp. 41-49. Cited 12 times. doi: 10.1016/j.electacta.2015.03.204Azim-Araghi, M.E., Bisadi, Z. Investigation of morphology, electrical behavior (AC and DC) and CO 2 gas sensitivity of porous silicon deposited with nanolayers of bromo aluminum phthalocyanine (2012) EPJ Applied Physics, 58 (2). Cited 2 times. doi: 10.1051/epjap/2012110472Saad, K.B., Saadoun, M., Hamzaoui, H., Bessaïs, B. AC impedance spectroscopy of porous silicon thin films containing metallic cations (2008) Materials Science and Engineering C, 28 (5-6), pp. 623-627. Cited 5 times. doi: 10.1016/j.msec.2007.10.052Archer, M., Christophersen, M., Fauchet, P.M. Electrical porous silicon chemical sensor for detection of organic solvents (2005) Sensors and Actuators, B: Chemical, 106 (1 SPEC. ISS.), pp. 347-357. Cited 104 times. doi: 10.1016/j.snb.2004.08.016Axelrod, E., Givant, A., Shappir, J., Feldman, Y., Sa'ar, A. Dielectric relaxation and transport in porous silicon (2002) Physical Review B - Condensed Matter and Materials Physics, 65 (16), art. no. 165429, pp. 1654291-1654297. Cited 41 timesPublication2bf30a66-1e41-42a5-8415-189ea7ccdfa8virtual::1753-12bf30a66-1e41-42a5-8415-189ea7ccdfa8virtual::1753-1https://scholar.google.com/citations?user=zxVYtU0AAAAJ&hl=envirtual::1753-10000-0002-9331-0491virtual::1753-1https://scienti.minciencias.gov.co/cvlac/visualizador/generarCurriculoCv.do?cod_rh=0000895857virtual::1753-1CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8805https://red.uao.edu.co/bitstreams/c8081b5e-6eb9-4de2-865e-2ad3dacce3ba/download4460e5956bc1d1639be9ae6146a50347MD52LICENSElicense.txtlicense.txttext/plain; charset=utf-81665https://red.uao.edu.co/bitstreams/d7617ed9-eea0-4efb-a2dc-bf714eff3df6/download20b5ba22b1117f71589c7318baa2c560MD5310614/11108oai:red.uao.edu.co:10614/111082024-03-12 14:55:50.296https://creativecommons.org/licenses/by-nc-nd/4.0/Derechos Reservados - Universidad Autónoma de Occidentemetadata.onlyhttps://red.uao.edu.coRepositorio Digital Universidad Autonoma de Occidenterepositorio@uao.edu.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 |