Temperature-dependent and dielectric relaxation of porous silicon prepared by electrochemical etching
In the electronic devices based on porous silicon (PS) is important understand the physical mechanisms governing the electrical behaviour in the PS/c-Si structure. In order to investigate the conduction mechanisms in the PS/p-Si heterojunction, we prepared the PS by electrochemical etching. The temp...
- Autores:
-
Fonthal Rico, Faruk
Oliveros Ortiz, Edward Steven's
Chavarria Varon, Mario Andres
- Tipo de recurso:
- Article of journal
- Fecha de publicación:
- 2016
- Institución:
- Universidad Autónoma de Occidente
- Repositorio:
- RED: Repositorio Educativo Digital UAO
- Idioma:
- eng
- OAI Identifier:
- oai:red.uao.edu.co:10614/11108
- Palabra clave:
- Dieléctricos
Relajación dieléctrica
Nanosilicio
Nanoelectrónica
Dielectrics
Dielectric relaxation
Nanosilicon
Nanoelectronics
- Rights
- closedAccess
- License
- Derechos Reservados - Universidad Autónoma de Occidente
| Summary: | In the electronic devices based on porous silicon (PS) is important understand the physical mechanisms governing the electrical behaviour in the PS/c-Si structure. In order to investigate the conduction mechanisms in the PS/p-Si heterojunction, we prepared the PS by electrochemical etching. The temperature dependence of the porous silicon was studied in the range from 300 K to 393 K, in a range until 10 V. On the other hand, the AC electrical measurements were performed from 5 Hz to 107 Hz. The calculated activation energies were close to 0,42 eV at 2 V. The physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found the dielectric behavior of the sample; the relaxation region is presented at high frequency |
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