Influence of substrate temperature on the microstructure of TiN/TiC

The TiN / TiC bilayers were deposited using the plasma-assisted vapor phase deposition (PAPVD) -Arch Pulsed technique, varying the substrate temperature in a range of 100-120 ± C, with intervals of 5 ± C. The coatings were analyzed by means of XPS and XRD. From the treatment of the signals of the na...

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Autores:
Devia, D M
Mesa, Fernando
Arango, Pedro José
Tipo de recurso:
Fecha de publicación:
2011
Institución:
Universidad EAFIT
Repositorio:
Repositorio EAFIT
Idioma:
spa
OAI Identifier:
oai:repository.eafit.edu.co:10784/14464
Acceso en línea:
http://hdl.handle.net/10784/14464
Palabra clave:
Pulsed Arc
Microstructure
Tin / Tic
Xps
Xrd
Arco Pulsado
Microestructura
Tin/Tic
Xps
Xrd
Rights
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Copyright (c) 2011 D M Devia, Fernando Mesa, Pedro José Arango
Description
Summary:The TiN / TiC bilayers were deposited using the plasma-assisted vapor phase deposition (PAPVD) -Arch Pulsed technique, varying the substrate temperature in a range of 100-120 ± C, with intervals of 5 ± C. The coatings were analyzed by means of XPS and XRD. From the treatment of the signals of the narrow spectra of XPS and the XRD patterns, the formation of the compounds TiN (Titanium Nitride), TiC (Titanium Carbide) and TiCN (titanium carbide) in the crystallographic phase was determined fm-3m corresponding to the FCC phases of these synthesized compounds.

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