Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires

The influence of an intense laser field on shallow-donor states in cylindrical GaAs–Ga1−xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the...

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Fecha de publicación:
2010
Institución:
Ministerio de Ciencia, Tecnología e Innovación
Repositorio:
Repositorio Minciencias
Idioma:
eng
OAI Identifier:
oai:repositorio.minciencias.gov.co:20.500.14143/18438
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https://repositorio.minciencias.gov.co/handle/20.500.14143/18438
Palabra clave:
Electrónica cuántica
Campos magnéticos
Campos electromagnéticos
Energía mecánica
Dispositivos semiconductores
Diodos semiconductores
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spelling Colombia2018-08-02T22:35:14Z2018-08-02T22:35:14Z2010-01info:eu-repo/date/embargoEnd/2024-01-310953-89841361-648Xhttps://repositorio.minciencias.gov.co/handle/20.500.14143/1843810.1088/0953-8984/22/4/045303The influence of an intense laser field on shallow-donor states in cylindrical GaAs–Ga1−xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the impurity energies corresponding to the ground state and 2p ± excited states are obtained via a variational procedure. The laser-field effects on the shallow-donor states are considered within the extended dressed-atom approach, which allows one to treat the problem 'impurity + heterostructure + laser field + magnetic field' as a renormalized 'impurity + heterostructure + magnetic field' problem, in which the laser effects are taken into account through a renormalization of both the conduction-band effective mass and fundamental semiconductor gap.Departamento Administrativo de Ciencia, Tecnología e Innovación [CO] Colciencias1106-452-21296Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicasnopdf8 páginasengControl cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a>Journal of Physics: Condensed Matter; Vol. 22, Num. 4; 2010 EneContiene 9 referencias bibliográficas. Véase el documento adjuntoLaser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wiresArtículo científicoinfo:eu-repo/semantics/articlehttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_2df8fbb1Administradores de ciencia y tecnologíaInvestigadoresElectrónica cuánticaCampos magnéticosCampos electromagnéticosEnergía mecánicaDispositivos semiconductoresDiodos semiconductoreshttp://purl.org/coar/access_right/c_f1cfLópez, F. E.Reyes Gómez, E.Porras Montenegro, NelsonBrandi, H. S.Oliveira, L. E.Universidad del Valle, Univallenelmonte@univalle.edu.coPrograma nacional de ciencias básicasComunidad científica colombiana0284-2008Artículos de investigaciónPublicationORIGINAL1-1-1-2-art.pdf1-1-1-2-art.pdfArticulo de Revista IOP Publishingapplication/pdf1610963https://repositorio.minciencias.gov.co/bitstreams/6104786e-7c4c-4129-a56c-eaffb489105d/downloadc10f505d25aca11f0b12a3e8b2833f68MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748https://repositorio.minciencias.gov.co/bitstreams/c4e324c2-8961-466d-9d34-8c40066ddcc1/download8a4605be74aa9ea9d79846c1fba20a33MD52TEXT1-1-1-2-art.pdf.txt1-1-1-2-art.pdf.txtExtracted texttext/plain2https://repositorio.minciencias.gov.co/bitstreams/62025b46-856f-4a08-9c29-642492aa8e6b/downloade1c06d85ae7b8b032bef47e42e4c08f9MD55THUMBNAIL1-1-1-2-art.pdf.jpg1-1-1-2-art.pdf.jpgGenerated Thumbnailimage/jpeg15876https://repositorio.minciencias.gov.co/bitstreams/2a9a7337-37eb-449f-82ba-46f7606a7be7/download3d04de8b7a9fc38f3b267103f8c0e0e1MD5620.500.14143/18438oai:repositorio.minciencias.gov.co:20.500.14143/184382023-11-29 17:47:13.941restrictedhttps://repositorio.minciencias.gov.coRepositorio Institucional de Mincienciascendoc@minciencias.gov.co
dc.title.es_CO.fl_str_mv Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
title Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
spellingShingle Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
Electrónica cuántica
Campos magnéticos
Campos electromagnéticos
Energía mecánica
Dispositivos semiconductores
Diodos semiconductores
title_short Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
title_full Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
title_fullStr Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
title_full_unstemmed Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
title_sort Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires
dc.subject.spines.none.fl_str_mv Electrónica cuántica
Campos magnéticos
Campos electromagnéticos
Energía mecánica
Dispositivos semiconductores
Diodos semiconductores
topic Electrónica cuántica
Campos magnéticos
Campos electromagnéticos
Energía mecánica
Dispositivos semiconductores
Diodos semiconductores
description The influence of an intense laser field on shallow-donor states in cylindrical GaAs–Ga1−xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the impurity energies corresponding to the ground state and 2p ± excited states are obtained via a variational procedure. The laser-field effects on the shallow-donor states are considered within the extended dressed-atom approach, which allows one to treat the problem 'impurity + heterostructure + laser field + magnetic field' as a renormalized 'impurity + heterostructure + magnetic field' problem, in which the laser effects are taken into account through a renormalization of both the conduction-band effective mass and fundamental semiconductor gap.
publishDate 2010
dc.date.issued.none.fl_str_mv 2010-01
dc.date.accessioned.none.fl_str_mv 2018-08-02T22:35:14Z
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dc.type.es_CO.fl_str_mv Artículo científico
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1361-648X
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url https://repositorio.minciencias.gov.co/handle/20.500.14143/18438
dc.language.iso.es_CO.fl_str_mv eng
language eng
dc.relation.ispartof.none.fl_str_mv Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a>
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dc.format.es_CO.fl_str_mv pdf
dc.format.extent.es_CO.fl_str_mv 8 páginas
dc.coverage.spatial.es_CO.fl_str_mv Colombia
dc.source.es_CO.fl_str_mv Journal of Physics: Condensed Matter; Vol. 22, Num. 4; 2010 Ene
institution Ministerio de Ciencia, Tecnología e Innovación
dc.source.bibliographicCitation.es_CO.fl_str_mv Contiene 9 referencias bibliográficas. Véase el documento adjunto
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