Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires

The influence of an intense laser field on shallow-donor states in cylindrical GaAs–Ga1−xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the...

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Autores:

Tipo de recurso:

Fecha de publicación:

2010

Institución:

Ministerio de Ciencia, Tecnología e Innovación

Repositorio:

Repositorio Minciencias

Idioma:

eng

OAI Identifier:

oai:repositorio.minciencias.gov.co:20.500.14143/18438

Acceso en línea:

https://repositorio.minciencias.gov.co/handle/20.500.14143/18438

Palabra clave:

Electrónica cuántica
Campos magnéticos
Campos electromagnéticos
Energía mecánica
Dispositivos semiconductores
Diodos semiconductores

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http://purl.org/coar/access_right/c_f1cf