Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields

The effects of a laser field on the conduction-electron effective Landé g factor in GaAs–Ga1−xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Landé factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity.

• Fecha de publicación: 2009
• Institución: Ministerio de Ciencia, Tecnología e Innovación
• Repositorio: Repositorio Minciencias
• Idioma: eng
• OAI Identifier: oai:repositorio.minciencias.gov.co:20.500.14143/18426
• Acceso en línea: https://repositorio.minciencias.gov.co/handle/20.500.14143/18426
• Palabra clave: Campos magnéticos; Energía mecánica; Dispositivos semiconductores; Diodos semiconductores; Energía mecánica
• License: http://purl.org/coar/access_right/c_f1cf