Study of temperature and indium concentration-dependent dielectric constant and electron affinity effects on the exciton optical transition and binding energy in spherical GaSb–Ga1−xInxAsySb1−y–GaSb quantum dots
We have study the heavy-hole exciton states in GaSb–GaInAsSb–GaSb type-I spherical Quantum Dots, using temperature-dependent static dielectric constant and electron affinity, with a finite height potential barrier, as a function of the quantum dot radius for several values of Indium concentration. O...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2010
- Institución:
- Minciencias
- Repositorio:
- Repositorio Minciencias
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.minciencias.gov.co:20.500.14143/18427
- Acceso en línea:
- https://repositorio.minciencias.gov.co/handle/20.500.14143/18427
- Palabra clave:
- Termodinámica
Campos electromagnéticos
Energía mecánica
- Rights
- License
- http://purl.org/coar/access_right/c_f1cf