TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the f...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2020
- Institución:
- Universidad del Rosario
- Repositorio:
- Repositorio EdocUR - U. Rosario
- Idioma:
- eng
- OAI Identifier:
- oai:repository.urosario.edu.co:10336/22558
- Acceso en línea:
- https://doi.org/10.1016/j.matchar.2020.110293
https://repository.urosario.edu.co/handle/10336/22558
- Palabra clave:
- Cobalt
Film preparation
Gallium arsenide
III-V semiconductors
Infrared imaging
Magnetron sputtering
Multilayer films
Oxide minerals
Rubidium
Rutherford backscattering spectroscopy
Semiconducting gallium
Silicon wafers
Substrates
Titanium dioxide
Bi-layer
Dc magnetron sputtering
Interdiffusion layer
Magnetic contribution
Multi-layer thin film
Rutile
Synthesis parameters
Tio2
Multilayers
Bilayer
Multilayer
NVM
RBS
Rutile
Tio2
- Rights
- License
- Abierto (Texto Completo)
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887bc1f9-06f9-47b2-a4f1-dc6a5d9afb5b-1ec86711e-a8e4-46ab-9f3e-586f776fc933-17e0abbd0-4fdb-4a2b-a3ee-9c33277c117d-1e82619b6-0c62-4dd5-bec0-c83dae8f271a-1d56bdc08-678b-456d-81e7-da6b9a4c3b91-1a506b888-fcd0-4bc9-a4f8-47ab1f1da544-12020-05-25T23:56:55Z2020-05-25T23:56:55Z2020In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the formation of the rutile and triclinic Co phases were identified in the multilayer thin films. An annealing process was carried in situ on all samples and subsequent to the deposition stage during 2 h. The substrate used was GaAs and Si wafer, favoring the formation and growth of the found phases. The diffusion and interdiffusion of the layers in the thin films were determined from Rutherford Backscattering Spectroscopy (RBS). In particular, Co and Ga were observed to associate after the annealing process according to the depth profiles. Due to the interdiffusion layers, the parallel magnetic contribution is not significant in the bilayer. Curves I-V of the Co/TiO2 bilayer showed the presence of resistive switching, according to the bipolar resistive. A correlation between synthesis parameters and the physical properties of the multilayers is presented. © 2020 Elsevier Inc.application/pdfhttps://doi.org/10.1016/j.matchar.2020.11029310445803https://repository.urosario.edu.co/handle/10336/22558engElsevier Inc.Materials CharacterizationVol. 163Materials Characterization, ISSN:10445803, Vol.163,(2020)https://www.scopus.com/inward/record.uri?eid=2-s2.0-85082775197&doi=10.1016%2fj.matchar.2020.110293&partnerID=40&md5=04084cb94247691386f2bb236ee90978Abierto (Texto Completo)http://purl.org/coar/access_right/c_abf2instname:Universidad del Rosarioreponame:Repositorio Institucional EdocURCobaltFilm preparationGallium arsenideIII-V semiconductorsInfrared imagingMagnetron sputteringMultilayer filmsOxide mineralsRubidiumRutherford backscattering spectroscopySemiconducting galliumSilicon wafersSubstratesTitanium dioxideBi-layerDc magnetron sputteringInterdiffusion layerMagnetic contributionMulti-layer thin filmRutileSynthesis parametersTio2MultilayersBilayerMultilayerNVMRBSRutileTio2TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface propertiesarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Quiroz, Heiddy P.Manso-Silván, M.Dussan, A.Busó-Rogero, CarlosPrieto, P.Mesa, F.10336/22558oai:repository.urosario.edu.co:10336/225582022-05-02 07:37:14.242055https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co |
dc.title.spa.fl_str_mv |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties |
title |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties |
spellingShingle |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties Cobalt Film preparation Gallium arsenide III-V semiconductors Infrared imaging Magnetron sputtering Multilayer films Oxide minerals Rubidium Rutherford backscattering spectroscopy Semiconducting gallium Silicon wafers Substrates Titanium dioxide Bi-layer Dc magnetron sputtering Interdiffusion layer Magnetic contribution Multi-layer thin film Rutile Synthesis parameters Tio2 Multilayers Bilayer Multilayer NVM RBS Rutile Tio2 |
title_short |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties |
title_full |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties |
title_fullStr |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties |
title_full_unstemmed |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties |
title_sort |
TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties |
dc.subject.keyword.spa.fl_str_mv |
Cobalt Film preparation Gallium arsenide III-V semiconductors Infrared imaging Magnetron sputtering Multilayer films Oxide minerals Rubidium Rutherford backscattering spectroscopy Semiconducting gallium Silicon wafers Substrates Titanium dioxide Bi-layer Dc magnetron sputtering Interdiffusion layer Magnetic contribution Multi-layer thin film Rutile Synthesis parameters Tio2 Multilayers Bilayer Multilayer NVM RBS Rutile Tio2 |
topic |
Cobalt Film preparation Gallium arsenide III-V semiconductors Infrared imaging Magnetron sputtering Multilayer films Oxide minerals Rubidium Rutherford backscattering spectroscopy Semiconducting gallium Silicon wafers Substrates Titanium dioxide Bi-layer Dc magnetron sputtering Interdiffusion layer Magnetic contribution Multi-layer thin film Rutile Synthesis parameters Tio2 Multilayers Bilayer Multilayer NVM RBS Rutile Tio2 |
description |
In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the formation of the rutile and triclinic Co phases were identified in the multilayer thin films. An annealing process was carried in situ on all samples and subsequent to the deposition stage during 2 h. The substrate used was GaAs and Si wafer, favoring the formation and growth of the found phases. The diffusion and interdiffusion of the layers in the thin films were determined from Rutherford Backscattering Spectroscopy (RBS). In particular, Co and Ga were observed to associate after the annealing process according to the depth profiles. Due to the interdiffusion layers, the parallel magnetic contribution is not significant in the bilayer. Curves I-V of the Co/TiO2 bilayer showed the presence of resistive switching, according to the bipolar resistive. A correlation between synthesis parameters and the physical properties of the multilayers is presented. © 2020 Elsevier Inc. |
publishDate |
2020 |
dc.date.accessioned.none.fl_str_mv |
2020-05-25T23:56:55Z |
dc.date.available.none.fl_str_mv |
2020-05-25T23:56:55Z |
dc.date.created.spa.fl_str_mv |
2020 |
dc.type.eng.fl_str_mv |
article |
dc.type.coarversion.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_6501 |
dc.type.spa.spa.fl_str_mv |
Artículo |
dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.1016/j.matchar.2020.110293 |
dc.identifier.issn.none.fl_str_mv |
10445803 |
dc.identifier.uri.none.fl_str_mv |
https://repository.urosario.edu.co/handle/10336/22558 |
url |
https://doi.org/10.1016/j.matchar.2020.110293 https://repository.urosario.edu.co/handle/10336/22558 |
identifier_str_mv |
10445803 |
dc.language.iso.spa.fl_str_mv |
eng |
language |
eng |
dc.relation.citationTitle.none.fl_str_mv |
Materials Characterization |
dc.relation.citationVolume.none.fl_str_mv |
Vol. 163 |
dc.relation.ispartof.spa.fl_str_mv |
Materials Characterization, ISSN:10445803, Vol.163,(2020) |
dc.relation.uri.spa.fl_str_mv |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85082775197&doi=10.1016%2fj.matchar.2020.110293&partnerID=40&md5=04084cb94247691386f2bb236ee90978 |
dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_abf2 |
dc.rights.acceso.spa.fl_str_mv |
Abierto (Texto Completo) |
rights_invalid_str_mv |
Abierto (Texto Completo) http://purl.org/coar/access_right/c_abf2 |
dc.format.mimetype.none.fl_str_mv |
application/pdf |
dc.publisher.spa.fl_str_mv |
Elsevier Inc. |
institution |
Universidad del Rosario |
dc.source.instname.spa.fl_str_mv |
instname:Universidad del Rosario |
dc.source.reponame.spa.fl_str_mv |
reponame:Repositorio Institucional EdocUR |
repository.name.fl_str_mv |
Repositorio institucional EdocUR |
repository.mail.fl_str_mv |
edocur@urosario.edu.co |
_version_ |
1814167498094804992 |