TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties

In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the f...

Full description

Autores:
Tipo de recurso:
Fecha de publicación:
2020
Institución:
Universidad del Rosario
Repositorio:
Repositorio EdocUR - U. Rosario
Idioma:
eng
OAI Identifier:
oai:repository.urosario.edu.co:10336/22558
Acceso en línea:
https://doi.org/10.1016/j.matchar.2020.110293
https://repository.urosario.edu.co/handle/10336/22558
Palabra clave:
Cobalt
Film preparation
Gallium arsenide
III-V semiconductors
Infrared imaging
Magnetron sputtering
Multilayer films
Oxide minerals
Rubidium
Rutherford backscattering spectroscopy
Semiconducting gallium
Silicon wafers
Substrates
Titanium dioxide
Bi-layer
Dc magnetron sputtering
Interdiffusion layer
Magnetic contribution
Multi-layer thin film
Rutile
Synthesis parameters
Tio2
Multilayers
Bilayer
Multilayer
NVM
RBS
Rutile
Tio2
Rights
License
Abierto (Texto Completo)
id EDOCUR2_e089cfc089e059838b39352818906be1
oai_identifier_str oai:repository.urosario.edu.co:10336/22558
network_acronym_str EDOCUR2
network_name_str Repositorio EdocUR - U. Rosario
repository_id_str
spelling 887bc1f9-06f9-47b2-a4f1-dc6a5d9afb5b-1ec86711e-a8e4-46ab-9f3e-586f776fc933-17e0abbd0-4fdb-4a2b-a3ee-9c33277c117d-1e82619b6-0c62-4dd5-bec0-c83dae8f271a-1d56bdc08-678b-456d-81e7-da6b9a4c3b91-1a506b888-fcd0-4bc9-a4f8-47ab1f1da544-12020-05-25T23:56:55Z2020-05-25T23:56:55Z2020In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the formation of the rutile and triclinic Co phases were identified in the multilayer thin films. An annealing process was carried in situ on all samples and subsequent to the deposition stage during 2 h. The substrate used was GaAs and Si wafer, favoring the formation and growth of the found phases. The diffusion and interdiffusion of the layers in the thin films were determined from Rutherford Backscattering Spectroscopy (RBS). In particular, Co and Ga were observed to associate after the annealing process according to the depth profiles. Due to the interdiffusion layers, the parallel magnetic contribution is not significant in the bilayer. Curves I-V of the Co/TiO2 bilayer showed the presence of resistive switching, according to the bipolar resistive. A correlation between synthesis parameters and the physical properties of the multilayers is presented. © 2020 Elsevier Inc.application/pdfhttps://doi.org/10.1016/j.matchar.2020.11029310445803https://repository.urosario.edu.co/handle/10336/22558engElsevier Inc.Materials CharacterizationVol. 163Materials Characterization, ISSN:10445803, Vol.163,(2020)https://www.scopus.com/inward/record.uri?eid=2-s2.0-85082775197&doi=10.1016%2fj.matchar.2020.110293&partnerID=40&md5=04084cb94247691386f2bb236ee90978Abierto (Texto Completo)http://purl.org/coar/access_right/c_abf2instname:Universidad del Rosarioreponame:Repositorio Institucional EdocURCobaltFilm preparationGallium arsenideIII-V semiconductorsInfrared imagingMagnetron sputteringMultilayer filmsOxide mineralsRubidiumRutherford backscattering spectroscopySemiconducting galliumSilicon wafersSubstratesTitanium dioxideBi-layerDc magnetron sputteringInterdiffusion layerMagnetic contributionMulti-layer thin filmRutileSynthesis parametersTio2MultilayersBilayerMultilayerNVMRBSRutileTio2TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface propertiesarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Quiroz, Heiddy P.Manso-Silván, M.Dussan, A.Busó-Rogero, CarlosPrieto, P.Mesa, F.10336/22558oai:repository.urosario.edu.co:10336/225582022-05-02 07:37:14.242055https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co
dc.title.spa.fl_str_mv TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
title TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
spellingShingle TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
Cobalt
Film preparation
Gallium arsenide
III-V semiconductors
Infrared imaging
Magnetron sputtering
Multilayer films
Oxide minerals
Rubidium
Rutherford backscattering spectroscopy
Semiconducting gallium
Silicon wafers
Substrates
Titanium dioxide
Bi-layer
Dc magnetron sputtering
Interdiffusion layer
Magnetic contribution
Multi-layer thin film
Rutile
Synthesis parameters
Tio2
Multilayers
Bilayer
Multilayer
NVM
RBS
Rutile
Tio2
title_short TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
title_full TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
title_fullStr TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
title_full_unstemmed TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
title_sort TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties
dc.subject.keyword.spa.fl_str_mv Cobalt
Film preparation
Gallium arsenide
III-V semiconductors
Infrared imaging
Magnetron sputtering
Multilayer films
Oxide minerals
Rubidium
Rutherford backscattering spectroscopy
Semiconducting gallium
Silicon wafers
Substrates
Titanium dioxide
Bi-layer
Dc magnetron sputtering
Interdiffusion layer
Magnetic contribution
Multi-layer thin film
Rutile
Synthesis parameters
Tio2
Multilayers
Bilayer
Multilayer
NVM
RBS
Rutile
Tio2
topic Cobalt
Film preparation
Gallium arsenide
III-V semiconductors
Infrared imaging
Magnetron sputtering
Multilayer films
Oxide minerals
Rubidium
Rutherford backscattering spectroscopy
Semiconducting gallium
Silicon wafers
Substrates
Titanium dioxide
Bi-layer
Dc magnetron sputtering
Interdiffusion layer
Magnetic contribution
Multi-layer thin film
Rutile
Synthesis parameters
Tio2
Multilayers
Bilayer
Multilayer
NVM
RBS
Rutile
Tio2
description In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the formation of the rutile and triclinic Co phases were identified in the multilayer thin films. An annealing process was carried in situ on all samples and subsequent to the deposition stage during 2 h. The substrate used was GaAs and Si wafer, favoring the formation and growth of the found phases. The diffusion and interdiffusion of the layers in the thin films were determined from Rutherford Backscattering Spectroscopy (RBS). In particular, Co and Ga were observed to associate after the annealing process according to the depth profiles. Due to the interdiffusion layers, the parallel magnetic contribution is not significant in the bilayer. Curves I-V of the Co/TiO2 bilayer showed the presence of resistive switching, according to the bipolar resistive. A correlation between synthesis parameters and the physical properties of the multilayers is presented. © 2020 Elsevier Inc.
publishDate 2020
dc.date.accessioned.none.fl_str_mv 2020-05-25T23:56:55Z
dc.date.available.none.fl_str_mv 2020-05-25T23:56:55Z
dc.date.created.spa.fl_str_mv 2020
dc.type.eng.fl_str_mv article
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_6501
dc.type.spa.spa.fl_str_mv Artículo
dc.identifier.doi.none.fl_str_mv https://doi.org/10.1016/j.matchar.2020.110293
dc.identifier.issn.none.fl_str_mv 10445803
dc.identifier.uri.none.fl_str_mv https://repository.urosario.edu.co/handle/10336/22558
url https://doi.org/10.1016/j.matchar.2020.110293
https://repository.urosario.edu.co/handle/10336/22558
identifier_str_mv 10445803
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.citationTitle.none.fl_str_mv Materials Characterization
dc.relation.citationVolume.none.fl_str_mv Vol. 163
dc.relation.ispartof.spa.fl_str_mv Materials Characterization, ISSN:10445803, Vol.163,(2020)
dc.relation.uri.spa.fl_str_mv https://www.scopus.com/inward/record.uri?eid=2-s2.0-85082775197&doi=10.1016%2fj.matchar.2020.110293&partnerID=40&md5=04084cb94247691386f2bb236ee90978
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.rights.acceso.spa.fl_str_mv Abierto (Texto Completo)
rights_invalid_str_mv Abierto (Texto Completo)
http://purl.org/coar/access_right/c_abf2
dc.format.mimetype.none.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv Elsevier Inc.
institution Universidad del Rosario
dc.source.instname.spa.fl_str_mv instname:Universidad del Rosario
dc.source.reponame.spa.fl_str_mv reponame:Repositorio Institucional EdocUR
repository.name.fl_str_mv Repositorio institucional EdocUR
repository.mail.fl_str_mv edocur@urosario.edu.co
_version_ 1814167498094804992