TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties

In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the f...

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Autores:
Tipo de recurso:
Fecha de publicación:
2020
Institución:
Universidad del Rosario
Repositorio:
Repositorio EdocUR - U. Rosario
Idioma:
eng
OAI Identifier:
oai:repository.urosario.edu.co:10336/22558
Acceso en línea:
https://doi.org/10.1016/j.matchar.2020.110293
https://repository.urosario.edu.co/handle/10336/22558
Palabra clave:
Cobalt
Film preparation
Gallium arsenide
III-V semiconductors
Infrared imaging
Magnetron sputtering
Multilayer films
Oxide minerals
Rubidium
Rutherford backscattering spectroscopy
Semiconducting gallium
Silicon wafers
Substrates
Titanium dioxide
Bi-layer
Dc magnetron sputtering
Interdiffusion layer
Magnetic contribution
Multi-layer thin film
Rutile
Synthesis parameters
Tio2
Multilayers
Bilayer
Multilayer
NVM
RBS
Rutile
Tio2
Rights
License
Abierto (Texto Completo)