Reliability challenges for GaN-based FETs

GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...

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Tipo de recurso:
Fecha de publicación:
2016
Institución:
Universidad del Rosario
Repositorio:
Repositorio EdocUR - U. Rosario
Idioma:
eng
OAI Identifier:
oai:repository.urosario.edu.co:10336/28399
Acceso en línea:
https://doi.org/10.7567/SSDM.2016.N-4-01
https://repository.urosario.edu.co/handle/10336/28399
Palabra clave:
GaN-based
Power electronic applications
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repository_id_str
spelling ea290736-517d-4a73-8db2-42882d53db3e-1e7b6a45f-76a8-4708-a523-1282cbb5f088-11cf2bf95-0cf3-4a76-9625-382a2234b272-1ed0211b9-483a-491f-bab5-22531a3fc6e4-17411e4ad-1f61-4627-8ee5-91eb472a9c5e-1e0e1fa09-cb2b-40a1-acd2-237668cd877e-1657e2826-9658-4223-8745-36315721df59-1c6cdfd28-8c6b-44f8-b96f-e4954a1bb487-12020-08-28T15:48:07Z2020-08-28T15:48:07Z2016GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed.application/pdfhttps://doi.org/10.7567/SSDM.2016.N-4-01https://repository.urosario.edu.co/handle/10336/28399engThe Japan Society of Applied Physics5825812016 International Conference on Solid State Devices and MaterialsInternational Conference on Solid State Devices and Materials (2016); pp. 581-582https://confit.atlas.jp/guide/event-img/ssdm2016/N-4-01/public/pdfAbierto (Texto Completo)http://purl.org/coar/access_right/c_abf22016 International Conference on Solid State Devices and Materialsinstname:Universidad del Rosarioreponame:Repositorio Institucional EdocURGaN-basedPower electronic applicationsReliability challenges for GaN-based FETsDesafíos de confiabilidad para los FET basados ??en GaNarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Kuball, MartinUren, Michael J.Pomeroy, James W.Karboyan, SergeChatterjee, IndranilLiu, DongAnaya, JulianBrazzini, Tommaso10336/28399oai:repository.urosario.edu.co:10336/283992021-06-03 00:49:47.017https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co
dc.title.spa.fl_str_mv Reliability challenges for GaN-based FETs
dc.title.TranslatedTitle.spa.fl_str_mv Desafíos de confiabilidad para los FET basados ??en GaN
title Reliability challenges for GaN-based FETs
spellingShingle Reliability challenges for GaN-based FETs
GaN-based
Power electronic applications
title_short Reliability challenges for GaN-based FETs
title_full Reliability challenges for GaN-based FETs
title_fullStr Reliability challenges for GaN-based FETs
title_full_unstemmed Reliability challenges for GaN-based FETs
title_sort Reliability challenges for GaN-based FETs
dc.subject.keyword.spa.fl_str_mv GaN-based
Power electronic applications
topic GaN-based
Power electronic applications
description GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed.
publishDate 2016
dc.date.created.spa.fl_str_mv 2016
dc.date.accessioned.none.fl_str_mv 2020-08-28T15:48:07Z
dc.date.available.none.fl_str_mv 2020-08-28T15:48:07Z
dc.type.eng.fl_str_mv article
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_6501
dc.type.spa.spa.fl_str_mv Artículo
dc.identifier.doi.none.fl_str_mv https://doi.org/10.7567/SSDM.2016.N-4-01
dc.identifier.uri.none.fl_str_mv https://repository.urosario.edu.co/handle/10336/28399
url https://doi.org/10.7567/SSDM.2016.N-4-01
https://repository.urosario.edu.co/handle/10336/28399
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.citationEndPage.none.fl_str_mv 582
dc.relation.citationStartPage.none.fl_str_mv 581
dc.relation.citationTitle.none.fl_str_mv 2016 International Conference on Solid State Devices and Materials
dc.relation.ispartof.spa.fl_str_mv International Conference on Solid State Devices and Materials (2016); pp. 581-582
dc.relation.uri.spa.fl_str_mv https://confit.atlas.jp/guide/event-img/ssdm2016/N-4-01/public/pdf
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.rights.acceso.spa.fl_str_mv Abierto (Texto Completo)
rights_invalid_str_mv Abierto (Texto Completo)
http://purl.org/coar/access_right/c_abf2
dc.format.mimetype.none.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv The Japan Society of Applied Physics
dc.source.spa.fl_str_mv 2016 International Conference on Solid State Devices and Materials
institution Universidad del Rosario
dc.source.instname.none.fl_str_mv instname:Universidad del Rosario
dc.source.reponame.none.fl_str_mv reponame:Repositorio Institucional EdocUR
repository.name.fl_str_mv Repositorio institucional EdocUR
repository.mail.fl_str_mv edocur@urosario.edu.co
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