Reliability challenges for GaN-based FETs
GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2016
- Institución:
- Universidad del Rosario
- Repositorio:
- Repositorio EdocUR - U. Rosario
- Idioma:
- eng
- OAI Identifier:
- oai:repository.urosario.edu.co:10336/28399
- Acceso en línea:
- https://doi.org/10.7567/SSDM.2016.N-4-01
https://repository.urosario.edu.co/handle/10336/28399
- Palabra clave:
- GaN-based
Power electronic applications
- Rights
- License
- Abierto (Texto Completo)
id |
EDOCUR2_bf9aa3de443ead111ca752a294760eda |
---|---|
oai_identifier_str |
oai:repository.urosario.edu.co:10336/28399 |
network_acronym_str |
EDOCUR2 |
network_name_str |
Repositorio EdocUR - U. Rosario |
repository_id_str |
|
spelling |
ea290736-517d-4a73-8db2-42882d53db3e-1e7b6a45f-76a8-4708-a523-1282cbb5f088-11cf2bf95-0cf3-4a76-9625-382a2234b272-1ed0211b9-483a-491f-bab5-22531a3fc6e4-17411e4ad-1f61-4627-8ee5-91eb472a9c5e-1e0e1fa09-cb2b-40a1-acd2-237668cd877e-1657e2826-9658-4223-8745-36315721df59-1c6cdfd28-8c6b-44f8-b96f-e4954a1bb487-12020-08-28T15:48:07Z2020-08-28T15:48:07Z2016GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed.application/pdfhttps://doi.org/10.7567/SSDM.2016.N-4-01https://repository.urosario.edu.co/handle/10336/28399engThe Japan Society of Applied Physics5825812016 International Conference on Solid State Devices and MaterialsInternational Conference on Solid State Devices and Materials (2016); pp. 581-582https://confit.atlas.jp/guide/event-img/ssdm2016/N-4-01/public/pdfAbierto (Texto Completo)http://purl.org/coar/access_right/c_abf22016 International Conference on Solid State Devices and Materialsinstname:Universidad del Rosarioreponame:Repositorio Institucional EdocURGaN-basedPower electronic applicationsReliability challenges for GaN-based FETsDesafíos de confiabilidad para los FET basados ??en GaNarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Kuball, MartinUren, Michael J.Pomeroy, James W.Karboyan, SergeChatterjee, IndranilLiu, DongAnaya, JulianBrazzini, Tommaso10336/28399oai:repository.urosario.edu.co:10336/283992021-06-03 00:49:47.017https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co |
dc.title.spa.fl_str_mv |
Reliability challenges for GaN-based FETs |
dc.title.TranslatedTitle.spa.fl_str_mv |
Desafíos de confiabilidad para los FET basados ??en GaN |
title |
Reliability challenges for GaN-based FETs |
spellingShingle |
Reliability challenges for GaN-based FETs GaN-based Power electronic applications |
title_short |
Reliability challenges for GaN-based FETs |
title_full |
Reliability challenges for GaN-based FETs |
title_fullStr |
Reliability challenges for GaN-based FETs |
title_full_unstemmed |
Reliability challenges for GaN-based FETs |
title_sort |
Reliability challenges for GaN-based FETs |
dc.subject.keyword.spa.fl_str_mv |
GaN-based Power electronic applications |
topic |
GaN-based Power electronic applications |
description |
GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed. |
publishDate |
2016 |
dc.date.created.spa.fl_str_mv |
2016 |
dc.date.accessioned.none.fl_str_mv |
2020-08-28T15:48:07Z |
dc.date.available.none.fl_str_mv |
2020-08-28T15:48:07Z |
dc.type.eng.fl_str_mv |
article |
dc.type.coarversion.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_6501 |
dc.type.spa.spa.fl_str_mv |
Artículo |
dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.7567/SSDM.2016.N-4-01 |
dc.identifier.uri.none.fl_str_mv |
https://repository.urosario.edu.co/handle/10336/28399 |
url |
https://doi.org/10.7567/SSDM.2016.N-4-01 https://repository.urosario.edu.co/handle/10336/28399 |
dc.language.iso.spa.fl_str_mv |
eng |
language |
eng |
dc.relation.citationEndPage.none.fl_str_mv |
582 |
dc.relation.citationStartPage.none.fl_str_mv |
581 |
dc.relation.citationTitle.none.fl_str_mv |
2016 International Conference on Solid State Devices and Materials |
dc.relation.ispartof.spa.fl_str_mv |
International Conference on Solid State Devices and Materials (2016); pp. 581-582 |
dc.relation.uri.spa.fl_str_mv |
https://confit.atlas.jp/guide/event-img/ssdm2016/N-4-01/public/pdf |
dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_abf2 |
dc.rights.acceso.spa.fl_str_mv |
Abierto (Texto Completo) |
rights_invalid_str_mv |
Abierto (Texto Completo) http://purl.org/coar/access_right/c_abf2 |
dc.format.mimetype.none.fl_str_mv |
application/pdf |
dc.publisher.spa.fl_str_mv |
The Japan Society of Applied Physics |
dc.source.spa.fl_str_mv |
2016 International Conference on Solid State Devices and Materials |
institution |
Universidad del Rosario |
dc.source.instname.none.fl_str_mv |
instname:Universidad del Rosario |
dc.source.reponame.none.fl_str_mv |
reponame:Repositorio Institucional EdocUR |
repository.name.fl_str_mv |
Repositorio institucional EdocUR |
repository.mail.fl_str_mv |
edocur@urosario.edu.co |
_version_ |
1814167742898503680 |