Reliability challenges for GaN-based FETs
GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2016
- Institución:
- Universidad del Rosario
- Repositorio:
- Repositorio EdocUR - U. Rosario
- Idioma:
- eng
- OAI Identifier:
- oai:repository.urosario.edu.co:10336/28399
- Acceso en línea:
- https://doi.org/10.7567/SSDM.2016.N-4-01
https://repository.urosario.edu.co/handle/10336/28399
- Palabra clave:
- GaN-based
Power electronic applications
- Rights
- License
- Abierto (Texto Completo)