Thermally stimulated conductivity of Cu 3BiS 3 thin films deposited by co-evaporation: Determination of trap parameters related to defects in the gap

thin films were produced by evaporating precursor Cu and Bi species in sulfur atmosphere through a two-stage process. Thermally stimulated current (TSC) measurements were carried out on as-grown Cu3BiS3 crystals in the temperature range of 150–400 K. The measurements were performed while increasing...

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Autores:

Tipo de recurso:

Fecha de publicación:

2012

Institución:

Universidad del Rosario

Repositorio:

Repositorio EdocUR - U. Rosario

Idioma:

eng

OAI Identifier:

oai:repository.urosario.edu.co:10336/26045

Acceso en línea:

https://doi.org/10.1007/s10853-012-6610-0
https://repository.urosario.edu.co/handle/10336/26045

Palabra clave:

Trapping center
Thermally stimulate current
Fermi temperature
Thermally stimulate current spectrum

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