Transient surface photovoltage of p-type Cu3BiS3

Thin films of Cu3BiS3 were prepared by coevaporation. Hall-effect, Seebeck-effect, and surface photovoltage measurements show that Cu3BiS3 is a p-type semiconductor with Hall-mobility, free carrier concentration, and thermo-electric power of 4?cm2/V?s, 2×1016?cm?3, and 0.73 mV/K, respectively. The w...

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Autores:

Tipo de recurso:

Fecha de publicación:

2010

Institución:

Universidad del Rosario

Repositorio:

Repositorio EdocUR - U. Rosario

Idioma:

eng

OAI Identifier:

oai:repository.urosario.edu.co:10336/27126

Acceso en línea:

https://doi.org/10.1063/1.3334728
https://repository.urosario.edu.co/handle/10336/27126

Palabra clave:

Charge transport
Work functions
Surface photovoltage measurements
Electronic transport
Thermoelectric effects
Electronic bandstructure

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