Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We pres...

Full description

Autores:

Tipo de recurso:

Fecha de publicación:

2012

Institución:

Universidad del Rosario

Repositorio:

Repositorio EdocUR - U. Rosario

Idioma:

eng

OAI Identifier:

oai:repository.urosario.edu.co:10336/27916

Acceso en línea:

https://doi.org/10.3762/bjnano.3.31
https://repository.urosario.edu.co/handle/10336/27916

Palabra clave:

Buffer layer
Cu3BiS3
Kelvin probe force microscopy
Solar cells

Rights

License

Abierto (Texto Completo)