Optoelectrical, structural and morphological characterization of Cu 2 ZnSnSe 4 compound used in photovoltaic applications

In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied. © 2016 Elsevier B.V.

• Fecha de publicación: 2016
• Institución: Universidad del Rosario
• Repositorio: Repositorio EdocUR - U. Rosario
• Idioma: eng
• OAI Identifier: oai:repository.urosario.edu.co:10336/22655
• Acceso en línea: https://doi.org/10.1016/j.apsusc.2016.04.073; https://repository.urosario.edu.co/handle/10336/22655
• Palabra clave: Copper compounds; Deposition; Thin films; Tin compounds; Zinc compounds; Cztse; Deposition temperatures; Electrical conductivity; Electrical transport; Morphological characterization; Photovoltaic applications; Raman; Variable range hopping; Selenium compounds; Cztse; Electrical transport; Raman; Thin films; XRD
• License: Abierto (Texto Completo)