Optoelectrical, structural and morphological characterization of Cu 2 ZnSnSe 4 compound used in photovoltaic applications
In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples de...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2016
- Institución:
- Universidad del Rosario
- Repositorio:
- Repositorio EdocUR - U. Rosario
- Idioma:
- eng
- OAI Identifier:
- oai:repository.urosario.edu.co:10336/22655
- Acceso en línea:
- https://doi.org/10.1016/j.apsusc.2016.04.073
https://repository.urosario.edu.co/handle/10336/22655
- Palabra clave:
- Copper compounds
Deposition
Thin films
Tin compounds
Zinc compounds
Cztse
Deposition temperatures
Electrical conductivity
Electrical transport
Morphological characterization
Photovoltaic applications
Raman
Variable range hopping
Selenium compounds
Cztse
Electrical transport
Raman
Thin films
XRD
- Rights
- License
- Abierto (Texto Completo)