On the validity of difusional model in determination of electric transport parameters of semiconductor compound

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin l...

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Tipo de recurso:
Fecha de publicación:
2014
Institución:
Universidad del Rosario
Repositorio:
Repositorio EdocUR - U. Rosario
Idioma:
eng
OAI Identifier:
oai:repository.urosario.edu.co:10336/28442
Acceso en línea:
https://doi.org/10.12693/APhysPolA.125.171
https://repository.urosario.edu.co/handle/10336/28442
Palabra clave:
Transport mechanism
Diffusional model
VRH
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network_acronym_str EDOCUR2
network_name_str Repositorio EdocUR - U. Rosario
repository_id_str
spelling 7e0abbd0-4fdb-4a2b-a3ee-9c33277c117d-1a506b888-fcd0-4bc9-a4f8-47ab1f1da544-12020-08-28T15:48:12Z2020-08-28T15:48:12Z2014-02In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds.application/pdfhttps://doi.org/10.12693/APhysPolA.125.171ISSN: 0587-4246EISSN: 1898-794Xhttps://repository.urosario.edu.co/handle/10336/28442engInstitute of Physics Polish Academy of Sciences173No. 2171Acta Physica Polonica A;Proceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, TurkeyVol. 125Acta Physica Polonica, ISSN: 0587-4246;EISSN: 1898-794X, Vol. 125, No. 2 (2014); pp. 171-173Proceedings of the 3rd International Congress APMAS2013, (April 24-28, 2013), Antalya, Turkeyhttp://przyrbwn.icm.edu.pl/APP/PDF/125/a125z2p001.pdfAbierto (Texto Completo)http://purl.org/coar/access_right/c_abf2Acta Physica Polonica AProceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, Turkeyinstname:Universidad del Rosarioreponame:Repositorio Institucional EdocURTransport mechanismDiffusional modelVRHOn the validity of difusional model in determination of electric transport parameters of semiconductor compoundSobre la validez del modelo difusional en la determinación de los parámetros de transporte eléctrico de compuestos semiconductoresarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Dussan, A.Mesa, F.10336/28442oai:repository.urosario.edu.co:10336/284422021-06-03 00:49:48.356https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co
dc.title.spa.fl_str_mv On the validity of difusional model in determination of electric transport parameters of semiconductor compound
dc.title.TranslatedTitle.spa.fl_str_mv Sobre la validez del modelo difusional en la determinación de los parámetros de transporte eléctrico de compuestos semiconductores
title On the validity of difusional model in determination of electric transport parameters of semiconductor compound
spellingShingle On the validity of difusional model in determination of electric transport parameters of semiconductor compound
Transport mechanism
Diffusional model
VRH
title_short On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_full On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_fullStr On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_full_unstemmed On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_sort On the validity of difusional model in determination of electric transport parameters of semiconductor compound
dc.subject.keyword.spa.fl_str_mv Transport mechanism
Diffusional model
VRH
topic Transport mechanism
Diffusional model
VRH
description In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds.
publishDate 2014
dc.date.created.spa.fl_str_mv 2014-02
dc.date.accessioned.none.fl_str_mv 2020-08-28T15:48:12Z
dc.date.available.none.fl_str_mv 2020-08-28T15:48:12Z
dc.type.eng.fl_str_mv article
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_6501
dc.type.spa.spa.fl_str_mv Artículo
dc.identifier.doi.none.fl_str_mv https://doi.org/10.12693/APhysPolA.125.171
dc.identifier.issn.none.fl_str_mv ISSN: 0587-4246
EISSN: 1898-794X
dc.identifier.uri.none.fl_str_mv https://repository.urosario.edu.co/handle/10336/28442
url https://doi.org/10.12693/APhysPolA.125.171
https://repository.urosario.edu.co/handle/10336/28442
identifier_str_mv ISSN: 0587-4246
EISSN: 1898-794X
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.citationEndPage.none.fl_str_mv 173
dc.relation.citationIssue.none.fl_str_mv No. 2
dc.relation.citationStartPage.none.fl_str_mv 171
dc.relation.citationTitle.none.fl_str_mv Acta Physica Polonica A;Proceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, Turkey
dc.relation.citationVolume.none.fl_str_mv Vol. 125
dc.relation.ispartof.spa.fl_str_mv Acta Physica Polonica, ISSN: 0587-4246;EISSN: 1898-794X, Vol. 125, No. 2 (2014); pp. 171-173
Proceedings of the 3rd International Congress APMAS2013, (April 24-28, 2013), Antalya, Turkey
dc.relation.uri.spa.fl_str_mv http://przyrbwn.icm.edu.pl/APP/PDF/125/a125z2p001.pdf
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.rights.acceso.spa.fl_str_mv Abierto (Texto Completo)
rights_invalid_str_mv Abierto (Texto Completo)
http://purl.org/coar/access_right/c_abf2
dc.format.mimetype.none.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv Institute of Physics Polish Academy of Sciences
dc.source.spa.fl_str_mv Acta Physica Polonica A
Proceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, Turkey
institution Universidad del Rosario
dc.source.instname.none.fl_str_mv instname:Universidad del Rosario
dc.source.reponame.none.fl_str_mv reponame:Repositorio Institucional EdocUR
repository.name.fl_str_mv Repositorio institucional EdocUR
repository.mail.fl_str_mv edocur@urosario.edu.co
_version_ 1814167711375163392

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