On the validity of difusional model in determination of electric transport parameters of semiconductor compound

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin l...

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Autores:

Tipo de recurso:

Fecha de publicación:

2014

Institución:

Universidad del Rosario

Repositorio:

Repositorio EdocUR - U. Rosario

Idioma:

eng

OAI Identifier:

oai:repository.urosario.edu.co:10336/28442

Acceso en línea:

https://doi.org/10.12693/APhysPolA.125.171
https://repository.urosario.edu.co/handle/10336/28442

Palabra clave:

Transport mechanism
Diffusional model
VRH

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