Strain-Engineered MOSFETs
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their f...
- Autores:
- Tipo de recurso:
- Book
- Fecha de publicación:
- 2012
- Institución:
- Universidad de Bogotá Jorge Tadeo Lozano
- Repositorio:
- Expeditio: repositorio UTadeo
- Idioma:
- eng
- OAI Identifier:
- oai:expeditiorepositorio.utadeo.edu.co:20.500.12010/15350
- Acceso en línea:
- https://library.oapen.org/handle/20.500.12657/22437
http://hdl.handle.net/20.500.12010/15350
- Palabra clave:
- Ingeniería
Ingeniería eléctrica
Electricidad
Manuales
Electrical engineering
Engineering
- Rights
- License
- Abierto (Texto Completo)
| Summary: | This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization. |
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