Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia

ilustraciones, graficas

Autores:: Aranguren Quintero, Daniel Felipe

Tipo de recurso:

Fecha de publicación:: 2022

Institución:: Universidad Nacional de Colombia

Repositorio:: Universidad Nacional de Colombia

Idioma:: spa

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dc.title.spa.fl_str_mv	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia
dc.title.translated.eng.fl_str_mv	Study of thermoelectric properties in nanostructured systems: possible conditions to optimize efficiency
title	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia
spellingShingle	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia 530 - Física::539 - Física moderna single-electron transistor Transistor de electrón único Universalidad Temperatura Kondo Puntos cuánticos Modelo de Anderson Grupo de renormalización numérico Termoelectricidad Figura térmica de mérito Eficiencia termoeléctrica Coeficientes de transporte Efecto Seebeck Aproximación atómica SET Universality Kondo Temperature Quantum Dots Anderson Model Numerical Renormalization Group Atomic Approximation for the Anderson Model Thermoelectricity Thermal Figure of Merit Thermoelectric Efficiency Transport Coefficients Seebeck Effect
title_short	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia
title_full	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia
title_fullStr	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia
title_full_unstemmed	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia
title_sort	Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia
dc.creator.fl_str_mv	Aranguren Quintero, Daniel Felipe
dc.contributor.advisor.none.fl_str_mv	Franco Peñaloza, Roberto Ramos Rodriguez, Edwin
dc.contributor.author.none.fl_str_mv	Aranguren Quintero, Daniel Felipe
dc.contributor.researchgroup.spa.fl_str_mv	Grupo de Sistemas Correlacionados
dc.subject.ddc.spa.fl_str_mv	530 - Física::539 - Física moderna
topic	530 - Física::539 - Física moderna single-electron transistor Transistor de electrón único Universalidad Temperatura Kondo Puntos cuánticos Modelo de Anderson Grupo de renormalización numérico Termoelectricidad Figura térmica de mérito Eficiencia termoeléctrica Coeficientes de transporte Efecto Seebeck Aproximación atómica SET Universality Kondo Temperature Quantum Dots Anderson Model Numerical Renormalization Group Atomic Approximation for the Anderson Model Thermoelectricity Thermal Figure of Merit Thermoelectric Efficiency Transport Coefficients Seebeck Effect
dc.subject.other.eng.fl_str_mv	single-electron transistor
dc.subject.other.spa.fl_str_mv	Transistor de electrón único
dc.subject.proposal.spa.fl_str_mv	Universalidad Temperatura Kondo Puntos cuánticos Modelo de Anderson Grupo de renormalización numérico Termoelectricidad Figura térmica de mérito Eficiencia termoeléctrica Coeficientes de transporte Efecto Seebeck Aproximación atómica
dc.subject.proposal.none.fl_str_mv	SET
dc.subject.proposal.eng.fl_str_mv	Universality Kondo Temperature Quantum Dots Anderson Model Numerical Renormalization Group Atomic Approximation for the Anderson Model Thermoelectricity Thermal Figure of Merit Thermoelectric Efficiency Transport Coefficients Seebeck Effect
description	ilustraciones, graficas
publishDate	2022
dc.date.accessioned.none.fl_str_mv	2022-07-26T13:31:09Z
dc.date.available.none.fl_str_mv	2022-07-26T13:31:09Z
dc.date.issued.none.fl_str_mv	2022-07
dc.type.spa.fl_str_mv	Trabajo de grado - Maestría
dc.type.driver.spa.fl_str_mv	info:eu-repo/semantics/masterThesis
dc.type.version.spa.fl_str_mv	info:eu-repo/semantics/acceptedVersion
dc.type.content.spa.fl_str_mv	Text
dc.type.redcol.spa.fl_str_mv	http://purl.org/redcol/resource_type/TM
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dc.identifier.uri.none.fl_str_mv	https://repositorio.unal.edu.co/handle/unal/81751
dc.identifier.instname.spa.fl_str_mv	Universidad Nacional de Colombia
dc.identifier.reponame.spa.fl_str_mv	Repositorio Institucional Universidad Nacional de Colombia
dc.identifier.repourl.spa.fl_str_mv	https://repositorio.unal.edu.co/
url	https://repositorio.unal.edu.co/handle/unal/81751 https://repositorio.unal.edu.co/
identifier_str_mv	Universidad Nacional de Colombia Repositorio Institucional Universidad Nacional de Colombia
dc.language.iso.spa.fl_str_mv	spa
language	spa
dc.relation.indexed.spa.fl_str_mv	RedCol LaReferencia
dc.relation.references.spa.fl_str_mv	M. Sato, H. Aikawa, K. Kobayashi, S. Katsumoto, and Y. Iye, “Observation of the fano kondo antiresonance in a quantum wire with a side-coupled quantum dot,” Phys. Rev. Lett., vol. 95, p. 066801, Aug 2005. A. Svilans, M. Josefsson, A. M. Burke, S. Fahlvik, C. Thelander, H. Linke, and M. Leijn se, “Thermoelectric characterization of the kondo resonance in nanowire quantum dots,” Phys. Rev. Lett., vol. 121, p. 206801, Nov 2018. J. He and T. Tritt, “Advances in thermoelectric materials research: Looking back and moving forward,” Science, vol. 357, p. eaak9997, 09 2017. C. J. Vineis, A. Shakouri, A. Majumdar, and M. G. Kanatzidis, “Nanostructured ther moelectrics: Big efficiency gains from small features,” Advanced Materials, vol. 22, no. 36, pp. 3970–3980, 2010. Z.-G. Chen, G. Han, L. Yang, L. Cheng, and J. 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Mahalu, “Spin-1 2 kondo effect in an inas nanowire quantum dot: Unitary limit, conductance scaling, and zeeman splitting,” Physical Review B, vol. 84, no. 24, p. 245316, 2011. T. Costi and V. Zlati´c, “Thermoelectric transport through strongly correlated quantum dots,” Physical Review B, vol. 81, no. 23, p. 235127, 2010. M. Yoshida and L. N. d. Oliveira, “Thermoelectric effects in quantum dots,” Physica B: Condensed Matter, vol. 404, no. 19, pp. 3312–3315, 2009. D. Boese and R. Fazio, “Thermoelectric effects in kondo-correlated quantum dots,” EPL (Europhysics Letters), vol. 56, no. 4, p. 576, 2001. B. Dong and X. Lei, “Effect of the kondo correlation on the thermopower in a quantum dot,” Journal of Physics: Condensed Matter, vol. 14, no. 45, p. 11747, 2002. D. Ferry and S. M. Goodnick, Transport in Nanostructures. Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Cambridge University Press, 1997. G. S. Nolas, J. Sharp, and H. G. Thermoelectrics, “Basic principles and new materials developments,” in Thermoelectrics, Springer, 2001. J. Haˇs´ık, E. Tosatti, and R. Marto˚A´ak, “Quantum and classical ripples in graphene,” Physical Review B, Volume 97, Issue 14, id.140301, vol. 97, p. 140301, apr 2018. J. Kondo, “Resistance Minimum in Dilute Magnetic Alloys,” Progress of Theoretical Physics, vol. 32, pp. 37–49, July 1964. J. R. Schrieffer and P. A. Wolff, “Relation between the anderson and kondo hamilto nians,” Phys. Rev., vol. 149, pp. 491–492, Sep 1966. P. W. Anderson, “Localized magnetic states in metals,” Phys. Rev., vol. 124, pp. 41–53, Oct 1961. D. Goldhaber-Gordon, J. Göres, M. A. Kastner, H. Shtrikman, D. Mahalu, and U. Mei rav, “From the kondo regime to the mixed-valence regime in a single-electron transistor,” Phys. Rev. Lett., vol. 81, pp. 5225–5228, Dec 1998. T. A. Costi, A. C. Hewson, and V. Zlatic, “Transport coefficients of the anderson model via the numerical renormalization group,” Journal of Physics: Condensed Matter, vol. 6, p. 2519–2558, Mar 1994. M. Yoshida, A. C. Seridonio, and L. N. Oliveira, “Universal zero-bias conductance for the single-electron transistor,” Physical Review B, vol. 80, no. 23, p. 235317, 2009. A. Seridonio, M. Yoshida, and L. Oliveira, “Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot,” Physical Review B, vol. 80, no. 23, p. 235318, 2009. E. Ramos, R. Franco, J. Silva-Valencia, and M. Figueira, “Thermoelectric transport properties of a t-coupled quantum dot: Atomic approach for the finite u case,” Physica E: Low-dimensional Systems and Nanostructures, vol. 64, pp. 39–44, 2014. G. Mahan and J. Sofo, “The best thermoelectric,” Proceedings of the National Academy of Sciences, vol. 93, no. 15, pp. 7436–7439, 1996. D. Goldhaber-Gordon, J. Gores, H. Shtrikman, D. Mahalu, U. Meirav, and M. Kastner, “The kondo effect in a single-electron transistor,” Materials Science and Engineering: B, vol. 84, no. 1, pp. 17 – 21, 2001. A. Hewson, “The kondo problem to heavy fermions (cambridge university press, cambridge, 1993).” H. Krishna-Murthy, J. Wilkins, and K. Wilson, “Renormalization-group approach to the anderson model of dilute magnetic alloys. i. static properties for the symmetric case,” Physical Review B, vol. 21, no. 3, p. 1003, 1980 N. Andrei, K. Furuya, and J. Lowenstein, “Solution of the kondo problem,” Reviews of modern physics, vol. 55, no. 2, p. 331, 1983 D. Stradi, U. Martinez, A. Blom, M. Brandbyge, and K. Stokbro, “General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium green’s function,” Physical Review B, vol. 93, no. 15, p. 155302, 2016 A. Seridonio, M. Yoshida, and L. Oliveira, “Thermal dependence of the zero-bias con ductance through a nanostructure,” EPL (Europhysics Letters), vol. 86, no. 6, p. 67006, 2009 D. Goldhaber-Gordon, J. G¨ores, M. A. Kastner, H. Shtrikman, D. Mahalu, and U. Mei rav, “From the kondo regime to the mixed-valence regime in a single-electron transistor,” Phys. Rev. Lett., vol. 81, pp. 5225–5228, Dec 1998 L. N. Oliveira, M. Yoshida, and A. C. Seridonio, “Universal conductance for the anderson model,” Journal of Physics: Conference Series, vol. 200, p. 052020, jan 2010 R. Scheibner, H. Buhmann, D. Reuter, M. N. Kiselev, and L. W. Molenkamp, “Ther mopower of a kondo spin-correlated quantum dot,” Phys. Rev. Lett., vol. 95, p. 176602, Oct 2005 E. A. Hoffmann, H. A. Nilsson, J. E. Matthews, N. Nakpathomkun, A. I. Persson, L. Samuelson, and H. Linke, “Measuring temperature gradients over nanometer length scales,” Nano Letters, vol. 9, no. 2, pp. 779–783, 2009 S. F. Svensson, E. A. Hoffmann, N. Nakpathomkun, P. M. Wu, H. Q. Xu, H. A. Nilsson, D. Sánchez, V. Kashcheyevs, and H. Linke, “Nonlinear thermovoltage and thermocurrent in quantum dots,” New Journal of Physics, vol. 15, p. 105011, oct 2013 B. Dutta, D. Majidi, A. García Corral, P. A. Erdman, S. Florens, T. A. Costi, H. Courtois, and C. B. Winkelmann, “Direct probe of the seebeck coefficient in a kondo correlated single-quantum-dot transistor,” Nano Letters, vol. 19, pp 506–511, Jan 2019 T. Lobo, M. Figueira, and M. Foglio, “The atomic approach to the anderson model for the finite u case: application to a quantum dot,” Nanotechnology, vol. 21, no. 27, p. 274007, 2010 E. Ramos, J. Silva-Valencia, R. Franco, and M. Figueira, “The thermoelectric figure of merit for the single electron transistor,” International journal of thermal sciences, vol. 86, pp. 387–393, 2014 A. Takayama, Basic Principle of Photoemission Spectroscopy and Spin Detector, pp. 15– 30. Tokyo: Springer Japan, 2015 S. L. Sewall, R. R. Cooney, K. E. H. Anderson, E. A. Dias, and P. 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Dang, “Electrically control amplified spontaneous emission in colloidal quantum dots,” Science Advances, vol. 5, p. eaav3140, 10 2019 C. W. Hsu, B. Zhen, A. D. Stone, J. D. Joannopoulos, and M. Soljacic, “Bound states in the continuum,” Nature Reviews Materials, vol. 1, no. 9, pp. 1–13, 2016 J. Von Neumann and E. Wigner, “On some peculiar discrete eigenvalues,” Phys. Z, vol. 30, pp. 465–467, 1929 G. Ordonez, K. Na, and S. Kim, “Bound states in the continuum in quantum-dot pairs,” Phys. Rev. A, vol. 73, p. 022113, Feb 2006 G. Ordonez, K. Na, and S. Kim, “Bound states in the continuum in quantum-dot pairs,” Physical Review A, vol. 73, no. 2, p. 022113, 2006 C. S. Kim and A. M. Satanin, “Dynamic confinement of electrons in time-dependent quantum structures,” Physical Review B, vol. 58, no. 23, p. 15389, 1998 A. S. C.S Kim, “Dynamic confinement of electrons in time dependent quantum structures.,” Physical Review B., vol. 58, 1998 R. U. Haq, S. S. Bharadwaj, and T. A. Wani, “An explicit method for schrieffer-wolff transformation,” 2019 R. U. Haq and S. S. Bharadwaj, “Schrieffer-wolff transformation of anderson models,” 2018
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dc.format.extent.spa.fl_str_mv	xiv, 71 páginas
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dc.publisher.spa.fl_str_mv	Universidad Nacional de Colombia
dc.publisher.program.spa.fl_str_mv	Bogotá - Ciencias - Maestría en Ciencias - Física
dc.publisher.department.spa.fl_str_mv	Departamento de Física
dc.publisher.faculty.spa.fl_str_mv	Facultad de Ciencias
dc.publisher.place.spa.fl_str_mv	Bogotá, Colombia
dc.publisher.branch.spa.fl_str_mv	Universidad Nacional de Colombia - Sede Bogotá
institution	Universidad Nacional de Colombia
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spelling	Atribución-CompartirIgual 4.0 Internacionalhttp://creativecommons.org/licenses/by-sa/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Franco Peñaloza, Robertod33e016a778b648b051c60aff4b33eed600Ramos Rodriguez, Edwin17c10c982f6ce02c8be38ea4c96bf654Aranguren Quintero, Daniel Felipecec2773faa30730711e64024b5862f63Grupo de Sistemas Correlacionados2022-07-26T13:31:09Z2022-07-26T13:31:09Z2022-07https://repositorio.unal.edu.co/handle/unal/81751Universidad Nacional de ColombiaRepositorio Institucional Universidad Nacional de Colombiahttps://repositorio.unal.edu.co/ilustraciones, graficasEl presente trabajo estudia y extiende, mediante argumentos de universalidad, el comportamiento térmico dentro del régimen Kondo, de las distintas propiedades termoeléctricas tales como: La termopotencia, la conductancia eléctrica y la conductancia térmica, dentro de nanoestructuras semiconductoras comprimidas. Aduciendo, a la fuerte evidencia tanto experimental como teórica de condiciones de universalidad para la conductancia eléctrica zero − bias (sin potencial externo aplicado), en función de la temperatura normalizada T∗ = T/TK, con TK actuando como la temperatura de Kondo. Estudiamos, por medio del modelo de impureza de Anderson SIAM, un sistema idealizado compuesto por un punto cuántico inmerso dentro un canal de conducción balístico (hilos cuánticos). Para este sistema, se establece un mapeo lineal sobre el cual, se pueden expresar los coeficientes de transporte termoeléctrico, en términos de la condición (universal) simétrica partícula-hueco, junto a un cambio fase δ producto de los procesos de dispersión cuánticos. Asimismo, bajo el grupo de renormalización numérica (NRG), se calculan los coeficientes termoeléctricos para este sistema, permitiendo así, ilustrar tanto la física implícita en estos procesos, como la validez del mapeo lineal, dentro de un variado rango de temperaturas. De igual modo, se aplicaron los resultados obtenidos, para los coeficientes termoeléctricos en su forma universal, sobre algunos resultados experimentales recientes, asociados a la conductancia eléctrica y el termo-voltaje Vgate dentro de un rango limitado de temperaturas en el régimen Kondo. Logrando con esto, calcular todas las propiedades termoeléctricas derivadas de los mismos, seguido de la obtención, de algunas expresiones analíticas simples, que pueden ser empleadas para predecir, validar y/o ajustar resultados experimentales. Sin embargo, debido a la ausencia de mediciones experimentales, sobre las otras propiedades termoeléctricas dentro de un rango variado de temperaturas, no fue posible examinar la validez de los resultados para las mismas. Por otro lado, empleando las relaciones universales obtenidas para los coeficientes de transporte termoeléctrico (Onsager), junto al parámetro de Mahan-Sofo. Se logra deducir una expresión tal que permite, obtener condiciones que maximizan la figura térmica de mérito multiplicada por la temperatura ZT en función del cambio de fase δ implícito, dentro del régimen Kondo. Así, al evaluar esta expresión sobre el sistema de un único punto cúantico inmerso entre dos hilos cuánticos, se encuentra que, bajo estas condiciones, es físicamente imposible obtener un cambio de fase, que permita maximizar la eficiencia térmica de este tipo de sistemas. De esta forma, se estudia mediante el método de aproximación atómica, un sistema “mejorado” compuesto por dos puntos cuánticos acoplados no interactuantes entre si, pero con fuerte correlación electrónica en cada punto cuántico. En este sistema, variando la energía del primer punto cuántico (el Vgate en sistemas experimentales), mientras se mantiene el segundo punto cuántico en la condición simétrica (simetría-electrón-hueco), se logra encontrar condiciones que replican el cambio de fase δ necesario para optimizar la figura térmica de mérito ZT y por ende, la eficiencia termoeléctrica del sistema. (Texto tomado de la fuente)The present work studies and extends, by universality arguments, the thermal behavior on the Kondo regime, for the different thermoelectric properties like: Thermopower, electrical conductance and thermal conductance. Within compressed semiconductor nanostructures. Adducing, to the strong experimental and theoretical evidence of universality conditions, for the electrical conductance zero − bias (no external potential applied), as a function of the normalized temperature T∗ =T/TK, where TK is the Kondo temperature. Studying, by the single impurity model SIAM, on an idealized system composed of a quantum dot enbedded in a ballistic conduction channel (quantum wires). For this system, we establish a linear mapping for the thermoelectric transport coefficients, allowing expressed in terms of the universal symmetric particle-hole condition, together with a phase shift δ product of the quantum scattering process. Likewise, under the numerical renormalization group (NRG), the thermoelectric coefficients for this system are calculated, thus allowing to illustrate both the physics implicit in these process, as well as the validity of the linear mapping, within a wide range of temperatures. On the same way, applying the thermoelectric coefficients in their universal form, on some recent experimental results, associated with the electrical conductance and the thermo-voltage Vgate on a limited temperature range in the Kondo regime. Achieving with this, calculate all the thermoelectric properties derived from them, followed by some simple analytical fit expressions, which can be used to predict, validate and/or adjust experimental results. However, due to the absence of experimental measurements for others thermoelectric properties within widdly range of temperatures, it was not possible examine the validity of the results for them. By other way, using the universal relationships obtained for the thermoelectric transport coefficients (Onsager), together with the Mahan-Sofo parameter. It is possible to deduce an expression such that it allows obtaining conditions that maximize the thermal figure of merit multiplied by the temperature ZT as a function of the implicit phase shift δ. Thus, when we evaluatate this expression on the system of a single quantum dot immersed between two quantum wires, in the Kondo regime. We found that, under these conditions, it is physically impossible to obtain a phase shift that allows maximizing the thermal efficiency for this type of system. Then, using the atomic approximation method, on a “tuned” system composed of two coupled quantum dots whitout interdot correlation, but strongly correlated in each quantum dot. On which, varying the energy level on the first quantum dot (the Vgate in experimental systems), while maintaining the second quantum dot in the symmetric electron-hole condition. It’s possible find, conditions that replicate the phase shift δ necessary to optimize the thermal figure of merit ZT and therefore, the thermodynamic efficiency of these type systemsMaestríaMagíster en Ciencias - FísicaSistemas nanoestructuradosxiv, 71 páginasapplication/pdfspaUniversidad Nacional de ColombiaBogotá - Ciencias - Maestría en Ciencias - FísicaDepartamento de FísicaFacultad de CienciasBogotá, ColombiaUniversidad Nacional de Colombia - Sede Bogotá530 - Física::539 - Física modernasingle-electron transistorTransistor de electrón únicoUniversalidadTemperatura KondoPuntos cuánticosModelo de AndersonGrupo de renormalización numéricoTermoelectricidadFigura térmica de méritoEficiencia termoeléctricaCoeficientes de transporteEfecto SeebeckAproximación atómicaSETUniversalityKondo TemperatureQuantum DotsAnderson ModelNumerical Renormalization GroupAtomic Approximation for the Anderson ModelThermoelectricityThermal Figure of MeritThermoelectric EfficiencyTransport CoefficientsSeebeck EffectEstudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficienciaStudy of thermoelectric properties in nanostructured systems: possible conditions to optimize efficiencyTrabajo de grado - Maestríainfo:eu-repo/semantics/masterThesisinfo:eu-repo/semantics/acceptedVersionTexthttp://purl.org/redcol/resource_type/TMRedColLaReferenciaM. 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Bharadwaj, “Schrieffer-wolff transformation of anderson models,” 2018EstudiantesInvestigadoresMaestrosPúblico generalORIGINAL1022361870_2022_07.pdf1022361870_2022_07.pdfTesis de Maestría en Ciencias - Físicasapplication/pdf5375732https://repositorio.unal.edu.co/bitstream/unal/81751/3/1022361870_2022_07.pdfc3de0684f2d0f68b476b7db53e6de2e4MD53LICENSElicense.txtlicense.txttext/plain; charset=utf-84074https://repositorio.unal.edu.co/bitstream/unal/81751/4/license.txt8153f7789df02f0a4c9e079953658ab2MD54THUMBNAIL1022361870_2022_07.pdf.jpg1022361870_2022_07.pdf.jpgGenerated Thumbnailimage/jpeg4458https://repositorio.unal.edu.co/bitstream/unal/81751/5/1022361870_2022_07.pdf.jpg836d001e1d4a9124b6a653df0f5e9ca1MD55unal/81751oai:repositorio.unal.edu.co:unal/817512024-08-07 23:10:37.074Repositorio Institucional Universidad Nacional de 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EVESURBIFBPUiBMQSBTRUNSRVRBUsONQSBHRU5FUkFMLiAqTEEgVEVTSVMgQSBQVUJMSUNBUiBERUJFIFNFUiBMQSBWRVJTScOTTiBGSU5BTCBBUFJPQkFEQS4gCgpBbCBoYWNlciBjbGljIGVuIGVsIHNpZ3VpZW50ZSBib3TDs24sIHVzdGVkIGluZGljYSBxdWUgZXN0w6EgZGUgYWN1ZXJkbyBjb24gZXN0b3MgdMOpcm1pbm9zLiBTaSB0aWVuZSBhbGd1bmEgZHVkYSBzb2JyZSBsYSBsaWNlbmNpYSwgcG9yIGZhdm9yLCBjb250YWN0ZSBjb24gZWwgYWRtaW5pc3RyYWRvciBkZWwgc2lzdGVtYS4KClVOSVZFUlNJREFEIE5BQ0lPTkFMIERFIENPTE9NQklBIC0gw5psdGltYSBtb2RpZmljYWNpw7NuIDE5LzEwLzIwMjEK

Estudio de propiedades termoeléctricas en sistemas nanoestructurados: posibles condiciones para optimizar la eficiencia

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