Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications
ilustraciones, tablas
- Autores:
-
Galindez Ruales, Edgar Felipe
- Tipo de recurso:
- Fecha de publicación:
- 2021
- Institución:
- Universidad Nacional de Colombia
- Repositorio:
- Universidad Nacional de Colombia
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.unal.edu.co:unal/79900
- Palabra clave:
- 530 - Física
Ferromagnetismo
Ferromagnetism
ZnO
Room-temperature ferromagnetism
Resistive switching
Non-volatile memories
Cobalt
ZnO
Ferromagnetismo
Conmutación resistiva
Memorias no volátiles
Cobalto
Semiconductor
Semiconductors
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 4.0 Internacional
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| dc.title.eng.fl_str_mv |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications |
| dc.title.translated.spa.fl_str_mv |
Propiedades estructurales y eléctricas del ZnO codopado preparado mediante co-pulverización catódica con DC-Magnetron para aplicaciones espintrónicas |
| title |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications |
| spellingShingle |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications 530 - Física Ferromagnetismo Ferromagnetism ZnO Room-temperature ferromagnetism Resistive switching Non-volatile memories Cobalt ZnO Ferromagnetismo Conmutación resistiva Memorias no volátiles Cobalto Semiconductor Semiconductors |
| title_short |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications |
| title_full |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications |
| title_fullStr |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications |
| title_full_unstemmed |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications |
| title_sort |
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications |
| dc.creator.fl_str_mv |
Galindez Ruales, Edgar Felipe |
| dc.contributor.advisor.none.fl_str_mv |
Dussan Cuenca, Anderson |
| dc.contributor.author.none.fl_str_mv |
Galindez Ruales, Edgar Felipe |
| dc.contributor.researchgroup.spa.fl_str_mv |
Materiales Nanoestructurados y sus Aplicaciones |
| dc.subject.ddc.spa.fl_str_mv |
530 - Física |
| topic |
530 - Física Ferromagnetismo Ferromagnetism ZnO Room-temperature ferromagnetism Resistive switching Non-volatile memories Cobalt ZnO Ferromagnetismo Conmutación resistiva Memorias no volátiles Cobalto Semiconductor Semiconductors |
| dc.subject.lemb.none.fl_str_mv |
Ferromagnetismo Ferromagnetism |
| dc.subject.proposal.eng.fl_str_mv |
ZnO Room-temperature ferromagnetism Resistive switching Non-volatile memories Cobalt |
| dc.subject.proposal.spa.fl_str_mv |
ZnO Ferromagnetismo Conmutación resistiva Memorias no volátiles Cobalto |
| dc.subject.unesco.none.fl_str_mv |
Semiconductor Semiconductors |
| description |
ilustraciones, tablas |
| publishDate |
2021 |
| dc.date.accessioned.none.fl_str_mv |
2021-08-09T16:42:15Z |
| dc.date.available.none.fl_str_mv |
2021-08-09T16:42:15Z |
| dc.date.issued.none.fl_str_mv |
2021-06-09 |
| dc.type.spa.fl_str_mv |
Trabajo de grado - Maestría |
| dc.type.driver.spa.fl_str_mv |
info:eu-repo/semantics/masterThesis |
| dc.type.version.spa.fl_str_mv |
info:eu-repo/semantics/acceptedVersion |
| dc.type.content.spa.fl_str_mv |
Text |
| dc.type.redcol.spa.fl_str_mv |
http://purl.org/redcol/resource_type/TM |
| status_str |
acceptedVersion |
| dc.identifier.uri.none.fl_str_mv |
https://repositorio.unal.edu.co/handle/unal/79900 |
| dc.identifier.instname.spa.fl_str_mv |
Universidad Nacional de Colombia |
| dc.identifier.reponame.spa.fl_str_mv |
Repositorio Institucional Universidad Nacional de Colombia |
| dc.identifier.repourl.spa.fl_str_mv |
https://repositorio.unal.edu.co/ |
| url |
https://repositorio.unal.edu.co/handle/unal/79900 https://repositorio.unal.edu.co/ |
| identifier_str_mv |
Universidad Nacional de Colombia Repositorio Institucional Universidad Nacional de Colombia |
| dc.language.iso.spa.fl_str_mv |
eng |
| language |
eng |
| dc.relation.references.spa.fl_str_mv |
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126 páginas |
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Universidad Nacional de Colombia |
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Bogotá - Ciencias - Maestría en Ciencias - Física |
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Departamento de Física |
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Facultad de Ciencias |
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Bogotá, Colombia |
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Atribución-NoComercial-SinDerivadas 4.0 InternacionalDerechos reservados al autor, 2021http://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Dussan Cuenca, Andersonb7a8fc3307ce61d8e85615627d0f33fbGalindez Ruales, Edgar Felipeb575f295ad5b827725193dd224a6ccc7Materiales Nanoestructurados y sus Aplicaciones2021-08-09T16:42:15Z2021-08-09T16:42:15Z2021-06-09https://repositorio.unal.edu.co/handle/unal/79900Universidad Nacional de ColombiaRepositorio Institucional Universidad Nacional de Colombiahttps://repositorio.unal.edu.co/ilustraciones, tablasIn this work, the e ect of Cobalt in ZnO thin lms was studied. The samples were synthesized by DC-Magnetron co-sputtering over di erent substrates (Glass, Al2O3, ITO, Si, and Au). Structural and electrical properties were studied through several characterization techniques, correlating the synthesis parameters and varying them until an optimal semiconductor matrix was achieved. Looking for the best con guration for a spintronic device, these and other characteristics of the samples were studied using diverse techniques, such as scanning electron microscopy, Auger spectroscopy, X-ray di raction, atomic force microscopy, energy-dispersive X-ray spectroscopy, ultraviolet-visible-near-infrared spectroscopy, electric measurements (Resistance and current-voltage curves) and magnetization measurements. Additionally, a computational study of the oxygen vacancies and cobalt role in the roomferromagnetism was performed. This approach was based on the density functional theory, where di erent con gurations of impurities were analyzed. A room temperature ferromagnetic stability was predicted in the ZnxCo1−xOy structure, also a decrease in the magnetic moment was founded when the oxygen vacancies increased. Experimentally, the Cobalt concentration in the samples was determined and secondary phases of Cobalt were not found in concentrations below 15%, and the d-d bond was con rmed by optical measurements. The thickness of the thin lms was between 50 and 190 nm, with Zinc:Oxygen in a 2:1 proportion. On the surface of the samples, the roughness increased with the cobalt concentration, and the samples with 15% presented a super cial magnetic orientation. The application as non-volatile memory was studied, current-voltage measurements showed the resistive switching phenomenon reported for the pure semiconductor, with a strong correlation with the Cobalt. The switching was performed with di erent limit currents and, the reliability and durability of the device were tested. The samples' magnetization exhibited hysteresis loops at room temperature when the samples have a considerable crystallinity. The magnetic behavior at room temperature along with the interesting electric properties brings the Co : ZnO thin lms prepared by DC-magnetron co-sputtering as a possible spintronic material for electronic applications. (Text taken from source)En este trabajo se estudió el efecto del cobalto en películas delgadas de ZnO. Las muestras se sintetizaron mediante pulverización catódica sobre diferentes sustratos (vidrio, Al2O3, ITO, Si y Au). Las propiedades estructurales y eléctricas fueron estudiadas, correlacionando los parámetros de síntesis y variándolos hasta lograr un semiconductor óptimo. Con la aplicación espintrónica en mente, se estudiaron estas y otras características de las muestras utilizando diversas técnicas, como microscopía electrónica de barrido, espectroscopía Auger, difracción de rayos X, microscopía de fuerza atómica, espectroscopía de rayos X de energía dispersiva, foto-espectroscopía, medidas eléctricas (resistencia y curvas de corriente-voltaje) y medidas de magnetización. Además, se realizó un estudio computacional sobre el papel de las vacancias de oxígeno y el cobalto en el ferromagnetismo a temperatura ambiente. Este enfoque se basó en la teoría funcional de la densidad, donde se analizaron diferentes configuraciones de impurezas y se predijo una estabilidad ferromagnética a temperatura ambiente. Experimentalmente, se determinó la concentración de cobalto en las muestras y no se encontraron fases secundarias en concentraciones por debajo del 15 %. La presencia del enlace d-d se confirmó mediante mediciones ópticas de las películas delgadas, cuyo espesor varió entre 50 y 190 nm, con una proporción entre Zinc: Oxígeno de 2: 1. En la superficie de las muestras, la rugosidad aumentó con la concentración de cobalto, y las muestras con sim15 % presentaron una orientación magnética superficial. Las medidas de corriente-voltaje mostraron el fenómeno de conmutación resistiva reportado para el semiconductor puro, con una fuerte correlación con el cobalto. La conmutación se realizó con diferentes corrientes límite, donde la confiabilidad y durabilidad del dispositivo fue comprobada. La magnetización de las muestras exhibió histéresis a temperatura ambiente en las muestras con cristalinidad considerable. El comportamiento magnético a temperatura ambiente junto con las interesantes propiedades eléctricas hace que las películas delgadas de Co : ZnO preparadas mediante pulverización catódica sean un posible material con aplicaciones en la espintrónica. (Texto tomado de la fuente)MaestríaMagíster en Ciencias - FísicaEspintrónicaSemiconductores magnéticos diluidos126 páginasapplication/pdfengUniversidad Nacional de ColombiaBogotá - Ciencias - Maestría en Ciencias - FísicaDepartamento de FísicaFacultad de CienciasBogotá, ColombiaUniversidad Nacional de Colombia - Sede Bogotá530 - FísicaFerromagnetismoFerromagnetismZnORoom-temperature ferromagnetismResistive switchingNon-volatile memoriesCobaltZnOFerromagnetismoConmutación resistivaMemorias no volátilesCobaltoSemiconductorSemiconductorsStructural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applicationsPropiedades estructurales y eléctricas del ZnO codopado preparado mediante co-pulverización catódica con DC-Magnetron para aplicaciones espintrónicasTrabajo de grado - Maestríainfo:eu-repo/semantics/masterThesisinfo:eu-repo/semantics/acceptedVersionTexthttp://purl.org/redcol/resource_type/TM[1] Matthew S. Eastin, Nancy H. 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