Donor impurity-related optical absorption in GaAs elliptic-shaped quantum dots
ABSTRACT: The conduction band and electron-donor impurity states in elliptic-shaped GaAs quantum dots under the effect of an externally applied electric field are calculated within the effective mass and adiabatic approximations using two different numerical approaches: a spectral scheme and the fin...
- Autores:
-
Londoño Arboleda, Mauricio Alejandro
Restrepo Arango, Ricardo León
Ojeda Silva, Judith Helena
Vinh Phuc, Huynh
Mora Ramos, Miguel Eduardo
Kasapoglu, E.
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2017
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/13106
- Acceso en línea:
- http://hdl.handle.net/10495/13106
https://doi.org/10.1155/2017/5970540
- Palabra clave:
- Absorción óptica
Puntos cuánticos
GaAs
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
| Summary: | ABSTRACT: The conduction band and electron-donor impurity states in elliptic-shaped GaAs quantum dots under the effect of an externally applied electric field are calculated within the effective mass and adiabatic approximations using two different numerical approaches: a spectral scheme and the finite element method. The resulting energies and wave functions become the basic information needed to evaluate the interstate optical absorption in the system, which is reported as a function of the geometry, the electric field strength, and the temperature. |
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