Density of States of a Donor Impurity in a GaAs Quantum Box under the Action of an Applied Electric Field
ABSTRACT: We calculate the density of states of a donor impurity in a GaAs quantum box under the action ofan electric field using effective-mass approximation within a variational scheme. We analyze thebehavior of the density of states as a function of the quantum box-size as well as a function of t...
- Autores:
-
Montes Barahona, Augusto León
Duque Echeverri, Carlos Alberto
Porras Montenegro, Nelson
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2000
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/13306
- Acceso en línea:
- http://hdl.handle.net/10495/13306
- Palabra clave:
- Applied electric field
Density
GaAs
Quantum box
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
| Summary: | ABSTRACT: We calculate the density of states of a donor impurity in a GaAs quantum box under the action ofan electric field using effective-mass approximation within a variational scheme. We analyze thebehavior of the density of states as a function of the quantum box-size as well as a function of theintensity of the applied electric field, and compare our results with previous reports in quantumwells and quantum well-wires. We expect these results will be of importance in the understandingof experimental absorption spectra related with donor impurities in GaAs quantum boxes underthe action of external electric fields |
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