A variational method for the description of the pressure-induced image mixing in GaAs-based quantum wells
ABSTARCT: The mixing between Γ and X conduction band valleys in GaAs–Ga1-xAlxAs quantum wells is investigated along the lines of a variational model. Trial wavefunctions are depending on a weighting variational parameter that accounts for the mixing by acting as a coefficient in the combination of b...
- Autores:
-
Mora Ramos, Miguel Eduardo
López Ríos, Sonia Yaneth
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2008
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/4838
- Acceso en línea:
- http://hdl.handle.net/10495/4838
- Palabra clave:
- Γ–X mixing
GaAs quantum wells
Hydrostatic pressure
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
| Summary: | ABSTARCT: The mixing between Γ and X conduction band valleys in GaAs–Ga1-xAlxAs quantum wells is investigated along the lines of a variational model. Trial wavefunctions are depending on a weighting variational parameter that accounts for the mixing by acting as a coefficient in the combination of both uncorrelated Γ and X states in the system. The dependencies of the calculated binding energy of a donor impurity and the correlated electron–hole photoluminescence peak energy upon hydrostatic pressure and quantum well width are presented. |
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