Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field

ABSTRACT: The differential cross-section of electron Raman scattering and the Raman gain are calculated and analysed in the case of prismatic quantum dots with equilateral triangle base shape. The study takes into account their dependencies on the size of the triangle, the influence of externally ap...

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Autores:
Tiutiunnyk, Anton
Akimov, Volodymyr
Tulupenko, Viktor
Mora Ramos, Miguel Eduardo
Kasapoglu, Esin
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
Tipo de recurso:
Article of investigation
Fecha de publicación:
2016
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/31004
Acceso en línea:
https://hdl.handle.net/10495/31004
Palabra clave:
Campos eléctricos
Electric fields
Efecto Raman
Raman effect
Quantum dots
Rights
openAccess
License
http://creativecommons.org/licenses/by/2.5/co/
id UDEA2_6696428a6d13d119cf795c18c718e3d7
oai_identifier_str oai:bibliotecadigital.udea.edu.co:10495/31004
network_acronym_str UDEA2
network_name_str Repositorio UdeA
repository_id_str
dc.title.spa.fl_str_mv Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
spellingShingle Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
Campos eléctricos
Electric fields
Efecto Raman
Raman effect
Quantum dots
title_short Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_full Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_fullStr Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_full_unstemmed Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_sort Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
dc.creator.fl_str_mv Tiutiunnyk, Anton
Akimov, Volodymyr
Tulupenko, Viktor
Mora Ramos, Miguel Eduardo
Kasapoglu, Esin
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
dc.contributor.author.none.fl_str_mv Tiutiunnyk, Anton
Akimov, Volodymyr
Tulupenko, Viktor
Mora Ramos, Miguel Eduardo
Kasapoglu, Esin
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
dc.subject.lemb.none.fl_str_mv Campos eléctricos
Electric fields
Efecto Raman
Raman effect
topic Campos eléctricos
Electric fields
Efecto Raman
Raman effect
Quantum dots
dc.subject.proposal.spa.fl_str_mv Quantum dots
description ABSTRACT: The differential cross-section of electron Raman scattering and the Raman gain are calculated and analysed in the case of prismatic quantum dots with equilateral triangle base shape. The study takes into account their dependencies on the size of the triangle, the influence of externally applied electric field as well as the presence of an ionized donor center located at the triangle’s orthocenter. The calculations are made within the effective mass and parabolic band approximations, with a diagonalization scheme being applied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incident and secondary (scattered) radiation have been considered linearly-polarized along the y-direction, coinciding with the direction of the applied electric field. For the case with an impurity center, Raman scattering with the intermediate state energy below the initial state one has been found to show maximum differential cross-section more than by an order of magnitude bigger than that resulting from the scheme with lower intermediate state energy. The Raman gain has maximum magnitude around 35 nm dot size and electric field of 40 kV/cm for the case without impurity and at maximum considered values of the input parameters for the case with impurity. Values of Raman gain of the order of up to 104 cm−1 are predicted in both cases.
publishDate 2016
dc.date.issued.none.fl_str_mv 2016
dc.date.accessioned.none.fl_str_mv 2022-09-30T20:33:32Z
dc.date.available.none.fl_str_mv 2022-09-30T20:33:32Z
dc.type.spa.fl_str_mv info:eu-repo/semantics/article
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.hasversion.spa.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.coar.spa.fl_str_mv http://purl.org/coar/resource_type/c_2df8fbb1
dc.type.redcol.spa.fl_str_mv https://purl.org/redcol/resource_type/ART
dc.type.local.spa.fl_str_mv Artículo de investigación
format http://purl.org/coar/resource_type/c_2df8fbb1
status_str publishedVersion
dc.identifier.issn.none.fl_str_mv 1434-6028
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/10495/31004
dc.identifier.doi.none.fl_str_mv 10.1140/epjb/e2016-70001-3
dc.identifier.eissn.none.fl_str_mv 1434-6036
identifier_str_mv 1434-6028
10.1140/epjb/e2016-70001-3
1434-6036
url https://hdl.handle.net/10495/31004
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.ispartofjournalabbrev.spa.fl_str_mv Eur. Phys. J. B.
dc.rights.spa.fl_str_mv info:eu-repo/semantics/openAccess
dc.rights.uri.*.fl_str_mv http://creativecommons.org/licenses/by/2.5/co/
dc.rights.accessrights.spa.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.rights.creativecommons.spa.fl_str_mv https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by/2.5/co/
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
dc.format.extent.spa.fl_str_mv 9
dc.format.mimetype.spa.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv Springer
dc.publisher.group.spa.fl_str_mv Grupo de Materia Condensada-UdeA
dc.publisher.place.spa.fl_str_mv Les Ulis, Francia
institution Universidad de Antioquia
bitstream.url.fl_str_mv https://bibliotecadigital.udea.edu.co/bitstream/10495/31004/1/MoralesAlvaro_2016_ElectronAndDonor-impurity.pdf
https://bibliotecadigital.udea.edu.co/bitstream/10495/31004/2/license_rdf
https://bibliotecadigital.udea.edu.co/bitstream/10495/31004/3/license.txt
bitstream.checksum.fl_str_mv 5c8b4ae61de0c14f56e0d56987fa3e81
1646d1f6b96dbbbc38035efc9239ac9c
8a4605be74aa9ea9d79846c1fba20a33
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositorio Institucional Universidad de Antioquia
repository.mail.fl_str_mv andres.perez@udea.edu.co
_version_ 1812173146692780032
spelling Tiutiunnyk, AntonAkimov, VolodymyrTulupenko, ViktorMora Ramos, Miguel EduardoKasapoglu, EsinMorales Aramburo, Álvaro LuisDuque Echeverri, Carlos Alberto2022-09-30T20:33:32Z2022-09-30T20:33:32Z20161434-6028https://hdl.handle.net/10495/3100410.1140/epjb/e2016-70001-31434-6036ABSTRACT: The differential cross-section of electron Raman scattering and the Raman gain are calculated and analysed in the case of prismatic quantum dots with equilateral triangle base shape. The study takes into account their dependencies on the size of the triangle, the influence of externally applied electric field as well as the presence of an ionized donor center located at the triangle’s orthocenter. The calculations are made within the effective mass and parabolic band approximations, with a diagonalization scheme being applied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incident and secondary (scattered) radiation have been considered linearly-polarized along the y-direction, coinciding with the direction of the applied electric field. For the case with an impurity center, Raman scattering with the intermediate state energy below the initial state one has been found to show maximum differential cross-section more than by an order of magnitude bigger than that resulting from the scheme with lower intermediate state energy. The Raman gain has maximum magnitude around 35 nm dot size and electric field of 40 kV/cm for the case without impurity and at maximum considered values of the input parameters for the case with impurity. Values of Raman gain of the order of up to 104 cm−1 are predicted in both cases.COL00107899application/pdfengSpringerGrupo de Materia Condensada-UdeALes Ulis, Franciainfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARTArtículo de investigaciónhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/2.5/co/http://purl.org/coar/access_right/c_abf2https://creativecommons.org/licenses/by/4.0/Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric fieldCampos eléctricosElectric fieldsEfecto RamanRaman effectQuantum dotsEur. Phys. J. B.European Physical Journal B10711689ORIGINALMoralesAlvaro_2016_ElectronAndDonor-impurity.pdfMoralesAlvaro_2016_ElectronAndDonor-impurity.pdfArtículo de investigaciónapplication/pdf877829https://bibliotecadigital.udea.edu.co/bitstream/10495/31004/1/MoralesAlvaro_2016_ElectronAndDonor-impurity.pdf5c8b4ae61de0c14f56e0d56987fa3e81MD51CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8927https://bibliotecadigital.udea.edu.co/bitstream/10495/31004/2/license_rdf1646d1f6b96dbbbc38035efc9239ac9cMD52LICENSElicense.txtlicense.txttext/plain; charset=utf-81748https://bibliotecadigital.udea.edu.co/bitstream/10495/31004/3/license.txt8a4605be74aa9ea9d79846c1fba20a33MD5310495/31004oai:bibliotecadigital.udea.edu.co:10495/310042022-09-30 15:33:33.067Repositorio Institucional Universidad de Antioquiaandres.perez@udea.edu.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