Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields

ABSTRACT: The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1−xAlxAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements.

• Autores: Duque Echeverri, Carlos Alberto; Oliveira, Luiz Eduardo; Leyva, Melquiades de Dios
• Tipo de recurso: Article of investigation
• Fecha de publicación: 2006
• Institución: Universidad de Antioquia
• Repositorio: Repositorio UdeA
• Idioma: eng
• OAI Identifier: oai:bibliotecadigital.udea.edu.co:10495/30802
• Acceso en línea: https://hdl.handle.net/10495/30802
• Palabra clave: Campos Magnéticos; Magnetic fields; Pozos cuánticos; Quantum wells; Campos eléctricos; Electric fields; Transiciones de excitones
• Rights: openAccess
• License: http://creativecommons.org/licenses/by-nc/2.5/co/