Electronic and optical properties of lead iodide
ABSTRACT: Lead iodide (PbI2) is a very important material with a technological applicability as a room-temperature radiation detector. It is a wide-band-gap semiconductor (Eg.2 eV) with high environmental stability efficiency. The performance of the detector cannot be fully understood unless its ele...
- Autores:
-
Arwin, H
Ferreira da Silva, A
Persson, C
Osorio Guillén, Jorge Mario
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2002
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/11556
- Acceso en línea:
- http://hdl.handle.net/10495/11556
- Palabra clave:
- Bridgman method
Optical absorption
Photoacoustic
Temperature
Propiedades electrónicas
Yoduro de Plomo
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
| Summary: | ABSTRACT: Lead iodide (PbI2) is a very important material with a technological applicability as a room-temperature radiation detector. It is a wide-band-gap semiconductor (Eg.2 eV) with high environmental stability efficiency. The performance of the detector cannot be fully understood unless its electronic and optical properties are determined. Recently, its band-gap energy and thermal properties were determined by photoacoustic spectroscopy. A single crystal of PbI2 was grown by the Bridgman method with the c-axis oriented perpendicular to the growth axis. The purpose of this work is to obtain the electronic structure of PbI2, its dielectric functions e 1 and e 2 by ellipsometry and theoretically by full-potential linear muffin-tinorbital ~FPLMTO! method, and the temperature dependence of the measured band-gap energy by optica absorption. The obtained Eg(T) can be fitted by two different methods, leading to Eg ~0 K! and Eg ~300 K!. |
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