Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells
ABSTARCT: Mixing between Γ and X valleys of the conduction band in GaAs–Ga1–xAlxAs quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. T...
- Autores:
-
Duque Echeverri, Carlos Alberto
López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2007
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/4839
- Acceso en línea:
- http://hdl.handle.net/10495/4839
- Palabra clave:
- Hydrostatic pressure effects
Física
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
| Summary: | ABSTARCT: Mixing between Γ and X valleys of the conduction band in GaAs–Ga1–xAlxAs quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. The mixing is considered along the lines of a phenomenological model. Variation of the confined ground state in the well as a function of the pressure is reported. The dependencies of the variationally calculated binding energy of a donor impurity with the hydrostatic pressure and well width are also presented. It is shown that the inclusion of the Γ–X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been observed for pressures above 20 kbar. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
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