Donor impurity-related optical absorption spectra in GaAs-Ga1–xAlxAs quantum wells : hydrostatic pressure and Γ –X conduction band mixing effects
ABSTARCT: Using a variational procedure within the effective mass approximation, the mixing between the Γ and X conduction band valleys in GaAs-Ga1–xAlxAs quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acc...
- Autores:
-
Mora Ramos, Miguel Eduardo
López Ríos, Sonia Yaneth
Duque, C. A.
Velasco, V. R.
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2007
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/4834
- Acceso en línea:
- http://hdl.handle.net/10495/4834
- Palabra clave:
- Hidrostática
Óptica
Física
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
| Summary: | ABSTARCT: Using a variational procedure within the effective mass approximation, the mixing between the Γ and X conduction band valleys in GaAs-Ga1–xAlxAs quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
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