Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

ABSTRACT: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these...

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Autores:
Duque Jiménez, Carlos Mario
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
Tipo de recurso:
Article of investigation
Fecha de publicación:
2012
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/8367
Acceso en línea:
http://hdl.handle.net/10495/8367
Palabra clave:
Campo láser intenso
Excitones
Nitruros
Pozos cuánticos
Rights
openAccess
License
Atribución 2.5 Colombia (CC BY 2.5 CO)
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oai_identifier_str oai:bibliotecadigital.udea.edu.co:10495/8367
network_acronym_str UDEA2
network_name_str Repositorio UdeA
repository_id_str
dc.title.spa.fl_str_mv Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
spellingShingle Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
Campo láser intenso
Excitones
Nitruros
Pozos cuánticos
title_short Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_full Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_fullStr Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_full_unstemmed Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_sort Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
dc.creator.fl_str_mv Duque Jiménez, Carlos Mario
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
dc.contributor.author.none.fl_str_mv Duque Jiménez, Carlos Mario
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
dc.subject.none.fl_str_mv Campo láser intenso
Excitones
Nitruros
Pozos cuánticos
topic Campo láser intenso
Excitones
Nitruros
Pozos cuánticos
description ABSTRACT: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.
publishDate 2012
dc.date.issued.none.fl_str_mv 2012
dc.date.accessioned.none.fl_str_mv 2017-09-27T16:36:47Z
dc.date.available.none.fl_str_mv 2017-09-27T16:36:47Z
dc.type.spa.fl_str_mv info:eu-repo/semantics/article
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
http://purl.org/coar/version/c_71e4c1898caa6e32
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dc.type.redcol.spa.fl_str_mv https://purl.org/redcol/resource_type/ART
dc.type.local.spa.fl_str_mv Artículo de investigación
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dc.identifier.citation.spa.fl_str_mv Duque Jiménez, C. A., Mora Ramos, M. E., & Duque Echeverri, C. A. (2012). Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields. Nanoscale Research Letters, (7),492-499. DOI:10.1186/1556-276X-7-492
dc.identifier.issn.none.fl_str_mv 1931-7572
dc.identifier.uri.none.fl_str_mv http://hdl.handle.net/10495/8367
dc.identifier.doi.none.fl_str_mv 19317573
10.1186/1556276X7492
dc.identifier.eissn.none.fl_str_mv 1556-276X
identifier_str_mv Duque Jiménez, C. A., Mora Ramos, M. E., & Duque Echeverri, C. A. (2012). Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields. Nanoscale Research Letters, (7),492-499. DOI:10.1186/1556-276X-7-492
1931-7572
19317573
10.1186/1556276X7492
1556-276X
url http://hdl.handle.net/10495/8367
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.ispartofjournalabbrev.spa.fl_str_mv Nanoscale Res Lett
dc.rights.*.fl_str_mv Atribución 2.5 Colombia (CC BY 2.5 CO)
dc.rights.spa.fl_str_mv info:eu-repo/semantics/openAccess
dc.rights.uri.*.fl_str_mv http://creativecommons.org/licenses/by/2.5/co/
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dc.rights.creativecommons.spa.fl_str_mv https://creativecommons.org/licenses/by/4.0/
rights_invalid_str_mv Atribución 2.5 Colombia (CC BY 2.5 CO)
http://creativecommons.org/licenses/by/2.5/co/
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eu_rights_str_mv openAccess
dc.format.mimetype.spa.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv Springer
dc.publisher.group.spa.fl_str_mv Grupo de Materia Condensada-UdeA
dc.publisher.place.spa.fl_str_mv Alemania
institution Universidad de Antioquia
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spelling Duque Jiménez, Carlos MarioMora Ramos, Miguel EduardoDuque Echeverri, Carlos Alberto2017-09-27T16:36:47Z2017-09-27T16:36:47Z2012Duque Jiménez, C. A., Mora Ramos, M. E., & Duque Echeverri, C. A. (2012). Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields. Nanoscale Research Letters, (7),492-499. DOI:10.1186/1556-276X-7-4921931-7572http://hdl.handle.net/10495/83671931757310.1186/1556276X74921556-276XABSTRACT: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. 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