Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
ABSTRACT: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these...
- Autores:
-
Duque Jiménez, Carlos Mario
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2012
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/8367
- Acceso en línea:
- http://hdl.handle.net/10495/8367
- Palabra clave:
- Campo láser intenso
Excitones
Nitruros
Pozos cuánticos
- Rights
- openAccess
- License
- Atribución 2.5 Colombia (CC BY 2.5 CO)
| Summary: | ABSTRACT: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail. |
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