Structure and physical properties of the LaBiFe2O6 Perovskite produced by the Modified Pechini Method
ABSTRACT: In this paper the synthesis of the LaBiFe2O6 material by the modified Pechini method is reported. Structural, morphologic, magnetic and optic experimental studies were performed. Rietveld refinement of x-ray diffraction patterns revealed that LaBiFe2O6 crystallizes in an orthorhombic perov...
- Autores:
-
Jaramillo Palacio, Johny Andrés
Barrera Bello, Elixir William
Munévar Cagigas, Julián Andrés
Arnache Olmos, Oscar Luis
Landínez Téllez, David A.
Roa Rojas, Jairo
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2017
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/10968
- Acceso en línea:
- http://hdl.handle.net/10495/10968
- Palabra clave:
- Propiedades físicas
Physical Phenomena
Semiconductores
Semiconductors
Método Pechini modificado
Doble perovskita
Ferromagnético
http://aims.fao.org/aos/agrovoc/c_8e15773e
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
Summary: | ABSTRACT: In this paper the synthesis of the LaBiFe2O6 material by the modified Pechini method is reported. Structural, morphologic, magnetic and optic experimental studies were performed. Rietveld refinement of x-ray diffraction patterns revealed that LaBiFe2O6 crystallizes in an orthorhombic perovskite structure (space group Pnma, # 62). Scanning electron microscopy images showed the nanometric feature of grains. X-ray dispersive spectroscopy permitted to infer the obtaining of the LaBiFe2O6 expected stoichiometry. Results of magnetic susceptibility as a function of temperature and field magnetization evidenced mixed ferromagnetism and superparamagnetism behavior at T=300 K. Mössbauer spectroscopy supported the superparamagnetic and ferromagnetic responses as a result of the nanogranular morphology and anisotropy effects. Spectrum of diffuse reflectance suggest that this material behaves as a semiconductor with energy gap Eg=2.13 eV. |
---|