Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard
The memristor is the fourth element that completes the cycle of the variables of an electric circuit, it is passive with two terminals and nonfour fundamental linear, since it directly relates the electric charge with the magnetic flux. The physical realization in the laboratories of Hewlett Packard...
- Autores:
-
Santos Solano, Jhon Alexander
- Tipo de recurso:
- Trabajo de grado de pregrado
- Fecha de publicación:
- 2022
- Institución:
- Universidad Antonio Nariño
- Repositorio:
- Repositorio UAN
- Idioma:
- spa
- OAI Identifier:
- oai:repositorio.uan.edu.co:123456789/7764
- Acceso en línea:
- http://repositorio.uan.edu.co/handle/123456789/7764
- Palabra clave:
- Memristor
Python
no lineal
T44.22 S237e
Memristor
Python
nonlineal
- Rights
- openAccess
- License
- Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)
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dc.title.es_ES.fl_str_mv |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard |
title |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard |
spellingShingle |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard Memristor Python no lineal T44.22 S237e Memristor Python nonlineal |
title_short |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard |
title_full |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard |
title_fullStr |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard |
title_full_unstemmed |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard |
title_sort |
Estudio e implementación en Python de un modelo para el Memristor de Hewlett Packard |
dc.creator.fl_str_mv |
Santos Solano, Jhon Alexander |
dc.contributor.advisor.spa.fl_str_mv |
Castañeda Melo, Luis Fernando |
dc.contributor.author.spa.fl_str_mv |
Santos Solano, Jhon Alexander |
dc.subject.es_ES.fl_str_mv |
Memristor Python no lineal |
topic |
Memristor Python no lineal T44.22 S237e Memristor Python nonlineal |
dc.subject.ddc.es_ES.fl_str_mv |
T44.22 S237e |
dc.subject.keyword.es_ES.fl_str_mv |
Memristor Python nonlineal |
description |
The memristor is the fourth element that completes the cycle of the variables of an electric circuit, it is passive with two terminals and nonfour fundamental linear, since it directly relates the electric charge with the magnetic flux. The physical realization in the laboratories of Hewlett Packard in 2008 was a very imp ortant advance for electronics, since with this the theory of Leon Chua was demonstrated at the time. In this work, the development of a simulated model for the Hewlett Packard Memristor is exposed, which is implemented in Python, initially making an und erstanding of the mathematical model used in Hewlett Packard and its implementation with a code in Python and carrying out an evaluation. , analysis and comparison of the results with respect to the base model, demonstrates the veracity and effectiveness o f the model |
publishDate |
2022 |
dc.date.issued.spa.fl_str_mv |
2022-06-02 |
dc.date.accessioned.none.fl_str_mv |
2023-03-02T20:31:40Z |
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2023-03-02T20:31:40Z |
dc.type.spa.fl_str_mv |
Trabajo de grado (Pregrado y/o Especialización) |
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http://purl.org/coar/resource_type/c_7a1f |
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http://repositorio.uan.edu.co/handle/123456789/7764 |
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D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, 2008, doi: 10.1038/nature06932. H. V. A. Gallardo and P. Titlacuatitla, “Descripci ´ on del modelo el ´ ectrico del memristor,” vol. 58, no. September 2012, pp. 113–119, 2012. L. O. Chua, “Memristor—The Missing Circuit Element,” IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507–519, 1971, doi: 10.1109/TCT.1971.1083337. D. E. Tesis, “Caracterización y pruebas de funcionamiento de memristores tipo Marconi,” 2019. Z. Biolek, D. Biolek, and V. Biolková, “SPICE model of memristor with nonlinear dopant drift,” Radioengineering, vol. 18, no. 2, pp. 210–214, 2009. K. Xu, Y. Zhang, L. Wang, W. T. Joines, and Q. H. Liu, “SPICE model of memristor and its application,” Midwest Symp. Circuits Syst., no. August, pp. 53–56, 2013, doi: 10.1109/MWSCAS.2013.6674583. R. Kozma, R. E. Pino, and G. E. Pazienza, Advances in neuromorphic memristor science and applications. 2012. doi: 10.1007/978-94-007-4491-2. O. Kavehei, A. Iqbal, Y. S. Kim, K. Eshraghian, S. F. Al-Sarawi, and D. Abbott, “The fourth element: Characteristics, modelling and electromagnetic Theory of the memristor,” Proc. R. Soc. A Math. Phys. Eng. Sci., vol. 466, no. 2120, pp. 21752202, 2010, doi: 10.1098/rspa.2009.0553. |
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repourl:https://repositorio.uan.edu.co/ |
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http://repositorio.uan.edu.co/handle/123456789/7764 |
identifier_str_mv |
D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, 2008, doi: 10.1038/nature06932. H. V. A. Gallardo and P. Titlacuatitla, “Descripci ´ on del modelo el ´ ectrico del memristor,” vol. 58, no. September 2012, pp. 113–119, 2012. L. O. Chua, “Memristor—The Missing Circuit Element,” IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507–519, 1971, doi: 10.1109/TCT.1971.1083337. D. E. Tesis, “Caracterización y pruebas de funcionamiento de memristores tipo Marconi,” 2019. Z. Biolek, D. Biolek, and V. Biolková, “SPICE model of memristor with nonlinear dopant drift,” Radioengineering, vol. 18, no. 2, pp. 210–214, 2009. K. Xu, Y. Zhang, L. Wang, W. T. Joines, and Q. H. Liu, “SPICE model of memristor and its application,” Midwest Symp. Circuits Syst., no. August, pp. 53–56, 2013, doi: 10.1109/MWSCAS.2013.6674583. R. Kozma, R. E. Pino, and G. E. Pazienza, Advances in neuromorphic memristor science and applications. 2012. doi: 10.1007/978-94-007-4491-2. O. Kavehei, A. Iqbal, Y. S. Kim, K. Eshraghian, S. F. Al-Sarawi, and D. Abbott, “The fourth element: Characteristics, modelling and electromagnetic Theory of the memristor,” Proc. R. Soc. A Math. Phys. Eng. Sci., vol. 466, no. 2120, pp. 21752202, 2010, doi: 10.1098/rspa.2009.0553. instname:Universidad Antonio Nariño reponame:Repositorio Institucional UAN repourl:https://repositorio.uan.edu.co/ |
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Acceso abierto |
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Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) |
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https://creativecommons.org/licenses/by-nc-nd/4.0/ |
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openAccess |
dc.publisher.spa.fl_str_mv |
Universidad Antonio Nariño |
dc.publisher.program.spa.fl_str_mv |
Ingeniería Electrónica |
dc.publisher.faculty.spa.fl_str_mv |
Facultad de Ingeniería Mecánica, Electrónica y Biomédica |
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Villavicencio |
institution |
Universidad Antonio Nariño |
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Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)Acceso abiertohttps://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Castañeda Melo, Luis FernandoSantos Solano, Jhon Alexander0000-0002-1142-500X204415298182023-03-02T20:31:40Z2023-03-02T20:31:40Z2022-06-02http://repositorio.uan.edu.co/handle/123456789/7764D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, 2008, doi: 10.1038/nature06932.H. V. A. Gallardo and P. Titlacuatitla, “Descripci ´ on del modelo el ´ ectrico del memristor,” vol. 58, no. September 2012, pp. 113–119, 2012.L. O. Chua, “Memristor—The Missing Circuit Element,” IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507–519, 1971, doi: 10.1109/TCT.1971.1083337.D. E. Tesis, “Caracterización y pruebas de funcionamiento de memristores tipo Marconi,” 2019.Z. Biolek, D. Biolek, and V. Biolková, “SPICE model of memristor with nonlinear dopant drift,” Radioengineering, vol. 18, no. 2, pp. 210–214, 2009.K. Xu, Y. Zhang, L. Wang, W. T. Joines, and Q. H. Liu, “SPICE model of memristor and its application,” Midwest Symp. Circuits Syst., no. August, pp. 53–56, 2013, doi: 10.1109/MWSCAS.2013.6674583.R. Kozma, R. E. Pino, and G. E. Pazienza, Advances in neuromorphic memristor science and applications. 2012. doi: 10.1007/978-94-007-4491-2.O. Kavehei, A. Iqbal, Y. S. Kim, K. Eshraghian, S. F. Al-Sarawi, and D. Abbott, “The fourth element: Characteristics, modelling and electromagnetic Theory of the memristor,” Proc. R. Soc. A Math. Phys. Eng. Sci., vol. 466, no. 2120, pp. 21752202, 2010, doi: 10.1098/rspa.2009.0553.instname:Universidad Antonio Nariñoreponame:Repositorio Institucional UANrepourl:https://repositorio.uan.edu.co/The memristor is the fourth element that completes the cycle of the variables of an electric circuit, it is passive with two terminals and nonfour fundamental linear, since it directly relates the electric charge with the magnetic flux. The physical realization in the laboratories of Hewlett Packard in 2008 was a very imp ortant advance for electronics, since with this the theory of Leon Chua was demonstrated at the time. In this work, the development of a simulated model for the Hewlett Packard Memristor is exposed, which is implemented in Python, initially making an und erstanding of the mathematical model used in Hewlett Packard and its implementation with a code in Python and carrying out an evaluation. , analysis and comparison of the results with respect to the base model, demonstrates the veracity and effectiveness o f the modelEl memristor es el cuarto elemento que completa el ciclo de las cuatro varaibles fundamentlaes de un circuito electrico, es pasivo de dos termimales y no lineal, puesto que este relaciona directamente la carga electrica con el flujo magnetico. L a realizacion fisica en c los laboratorios de Hewlett packard en el año 2008 fue un avance muy importe para la eclectroni a, puesto que con esto se demuestra la teoria de Leon Chua en su momento En este trabajo se expone el desarrollo de un modelo simulad . o para el Memristor de Hewlett packard, el cual se implementa en Python, realizando inicialmente una comprension del modelo matematico usado en Hewlett Packard y la implementacion del mismo con un codigo en Python y realizando una evaluacion, analisis y co mparacion de los resultados al modelo base, demuestra la veracidad y efectividad del modelo.Ingeniero(a) Electrónico(a)PregradoPresencialProyectospaUniversidad Antonio NariñoIngeniería ElectrónicaFacultad de Ingeniería Mecánica, Electrónica y BiomédicaVillavicencioMemristorPythonno linealT44.22 S237eMemristorPythonnonlinealEstudio e implementación en Python de un modelo para el Memristor de Hewlett PackardTrabajo de grado (Pregrado y/o Especialización)http://purl.org/coar/resource_type/c_7a1fhttp://purl.org/coar/version/c_970fb48d4fbd8a85EspecializadaORIGINAL2022_Jhon Alexander Santos Solano_Acta.pdf2022_Jhon Alexander Santos Solano_Acta.pdfActaapplication/pdf411812https://repositorio.uan.edu.co/bitstreams/c8c5f604-3db1-4e3e-b0fd-d358513457dc/download631a967d40969f95a684bfcfe3b04663MD512022_Jhon Alexander Santos Solano.pdf2022_Jhon Alexander Santos Solano.pdfLibro Finalapplication/pdf1415144https://repositorio.uan.edu.co/bitstreams/6c55d7fa-82b6-4198-8c0d-d3050692f217/downloadca41ea0bef2d999a8512c893496736d1MD522022_Jhon Alexander Santos Solano_Autorizacion.pdf2022_Jhon Alexander Santos Solano_Autorizacion.pdfAutorizaciónapplication/pdf347083https://repositorio.uan.edu.co/bitstreams/e8ec18e1-f685-4f34-891a-2fc75d29e84b/downloadfad569b64728ca9bc24c37a9e803a896MD53Jhon Alexander Santos Solano-Rev_Turnitin.pdfJhon Alexander Santos Solano-Rev_Turnitin.pdfRev. 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