Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties
This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic ()...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2016
- Institución:
- Universidad Pedagógica y Tecnológica de Colombia
- Repositorio:
- RiUPTC: Repositorio Institucional UPTC
- Idioma:
- spa
- OAI Identifier:
- oai:repositorio.uptc.edu.co:001/15184
- Acceso en línea:
- https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225
https://repositorio.uptc.edu.co/handle/001/15184
- Palabra clave:
- CuIn1−xGaxSe2
Tight-Binding
aproximación de cristal virtual
Crystal Field Splitting. (CuIn1-xGaxSe2
Virtual Crystal Approximation
Crystal Field Splitting)
- Rights
- License
- Derechos de autor 2016 CIENCIA EN DESARROLLO
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2016-02-152024-07-08T14:23:48Z2024-07-08T14:23:48Zhttps://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/422510.19053/01217488.4225https://repositorio.uptc.edu.co/handle/001/15184This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic () distortions. In both cases, the CuIn1-xGaxSe2 is a direct semiconductor at Γ, for all concentrations.It was found that the Crystal Field Splitting (CFS) at the Γ point depends mainly on the tetragonal distortion. The CFS is positive for x &lt, 0,32 and negative for x &gt, 0.32. This behavior is due that when x is increasing, the unit cell shrinks, approaching the pseudo-atom (In,Ga) to the Se atom.Se reportan cálculos de propiedades electrónicas del compuesto CuIn1−xGaxSe2 (x = 0,0, 0,2, 0,4, 0,6, 0,8, 1,0), usando el método Tight-Binding (TB) y Virtual Crystal Approximation (VCA). Se considera el caso ideal y con las distorsiones tetragonal (η) y aniónica (μ). En ambos casos, el CuIn1−xGaxSe2 es un semiconductor directo en Γ, para todas las concentraciones. Se encontró que el Crystal Field Splitting (CFS) en el punto Γ depende principalmente de la distorsión tetragonal. El CFS es positivo para x &lt, 0,32 y negativo para x &gt, 0,32. Este comportamiento se debe a que cuando aumenta x, la celda unitaria se contrae, acercando el pseudoátomo (In,Ga) al átomo de Se.application/pdfspaspaUniversidad Pedagógica y Tecnológica de Colombiahttps://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225/3656Derechos de autor 2016 CIENCIA EN DESARROLLOhttp://purl.org/coar/access_right/c_abf2Ciencia En Desarrollo; Vol. 7 No. 1 (2016): Enero a Junio; 9-14Ciencia en Desarrollo; Vol. 7 Núm. 1 (2016): Enero a Junio; 9-142462-76580121-7488CuIn1−xGaxSe2Tight-Bindingaproximación de cristal virtualCrystal Field Splitting. (CuIn1-xGaxSe2Virtual Crystal ApproximationCrystal Field Splitting)Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic PropertiesEfecto de la concentración de Ga sobre las propiedades electrónicas del CuIn1−XGaXSe2info:eu-repo/semantics/articlehttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_2df8fbb1Rasero Causil, D. A.Portacio Lamadrid, A. A.Rodríguez, J. A.001/15184oai:repositorio.uptc.edu.co:001/151842025-07-18 10:56:46.201metadata.onlyhttps://repositorio.uptc.edu.coRepositorio Institucional UPTCrepositorio.uptc@uptc.edu.co |
| dc.title.en-US.fl_str_mv |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| dc.title.es-ES.fl_str_mv |
Efecto de la concentración de Ga sobre las propiedades electrónicas del CuIn1−XGaXSe2 |
| title |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| spellingShingle |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting) |
| title_short |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_full |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_fullStr |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_full_unstemmed |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_sort |
Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| dc.subject.es-ES.fl_str_mv |
CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting) |
| topic |
CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting) |
| description |
This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic () distortions. In both cases, the CuIn1-xGaxSe2 is a direct semiconductor at Γ, for all concentrations.It was found that the Crystal Field Splitting (CFS) at the Γ point depends mainly on the tetragonal distortion. The CFS is positive for x &lt, 0,32 and negative for x &gt, 0.32. This behavior is due that when x is increasing, the unit cell shrinks, approaching the pseudo-atom (In,Ga) to the Se atom. |
| publishDate |
2016 |
| dc.date.accessioned.none.fl_str_mv |
2024-07-08T14:23:48Z |
| dc.date.available.none.fl_str_mv |
2024-07-08T14:23:48Z |
| dc.date.none.fl_str_mv |
2016-02-15 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article |
| dc.type.coarversion.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_2df8fbb1 |
| dc.identifier.none.fl_str_mv |
https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 10.19053/01217488.4225 |
| dc.identifier.uri.none.fl_str_mv |
https://repositorio.uptc.edu.co/handle/001/15184 |
| url |
https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 https://repositorio.uptc.edu.co/handle/001/15184 |
| identifier_str_mv |
10.19053/01217488.4225 |
| dc.language.none.fl_str_mv |
spa |
| dc.language.iso.none.fl_str_mv |
spa |
| language |
spa |
| dc.relation.none.fl_str_mv |
https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225/3656 |
| dc.rights.es-ES.fl_str_mv |
Derechos de autor 2016 CIENCIA EN DESARROLLO |
| dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_abf2 |
| rights_invalid_str_mv |
Derechos de autor 2016 CIENCIA EN DESARROLLO http://purl.org/coar/access_right/c_abf2 |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.es-ES.fl_str_mv |
Universidad Pedagógica y Tecnológica de Colombia |
| dc.source.en-US.fl_str_mv |
Ciencia En Desarrollo; Vol. 7 No. 1 (2016): Enero a Junio; 9-14 |
| dc.source.es-ES.fl_str_mv |
Ciencia en Desarrollo; Vol. 7 Núm. 1 (2016): Enero a Junio; 9-14 |
| dc.source.none.fl_str_mv |
2462-7658 0121-7488 |
| institution |
Universidad Pedagógica y Tecnológica de Colombia |
| repository.name.fl_str_mv |
Repositorio Institucional UPTC |
| repository.mail.fl_str_mv |
repositorio.uptc@uptc.edu.co |
| _version_ |
1839633885353213952 |