Improvements of the Design Process in the Microwave Transistors Industry

This paper presents a technique to improve the design process of microwave transistors based on two aspects: an improved design of experiment test (DOE), and an electro-thermal enhanced model (MET). The DOE test allowed us to center the design through variations in specific parameters, avoiding comp...

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Autores:
Tipo de recurso:
Fecha de publicación:
2019
Institución:
Universidad Pedagógica y Tecnológica de Colombia
Repositorio:
RiUPTC: Repositorio Institucional UPTC
Idioma:
spa
OAI Identifier:
oai:repositorio.uptc.edu.co:001/14248
Acceso en línea:
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784
https://repositorio.uptc.edu.co/handle/001/14248
Palabra clave:
circuits
microwave
power semiconductors
radio communication
transistors
circuitos
microondas
radiocomunicación
semiconductores de potencia
transistores
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License
http://purl.org/coar/access_right/c_abf53
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dc.title.en-US.fl_str_mv Improvements of the Design Process in the Microwave Transistors Industry
dc.title.es-ES.fl_str_mv Mejoras del proceso de diseño en la industria de transistores de microondas
title Improvements of the Design Process in the Microwave Transistors Industry
spellingShingle Improvements of the Design Process in the Microwave Transistors Industry
circuits
microwave
power semiconductors
radio communication
transistors
circuitos
microondas
radiocomunicación
semiconductores de potencia
transistores
title_short Improvements of the Design Process in the Microwave Transistors Industry
title_full Improvements of the Design Process in the Microwave Transistors Industry
title_fullStr Improvements of the Design Process in the Microwave Transistors Industry
title_full_unstemmed Improvements of the Design Process in the Microwave Transistors Industry
title_sort Improvements of the Design Process in the Microwave Transistors Industry
dc.subject.en-US.fl_str_mv circuits
microwave
power semiconductors
radio communication
transistors
topic circuits
microwave
power semiconductors
radio communication
transistors
circuitos
microondas
radiocomunicación
semiconductores de potencia
transistores
dc.subject.es-ES.fl_str_mv circuitos
microondas
radiocomunicación
semiconductores de potencia
transistores
description This paper presents a technique to improve the design process of microwave transistors based on two aspects: an improved design of experiment test (DOE), and an electro-thermal enhanced model (MET). The DOE test allowed us to center the design through variations in specific parameters, avoiding complex electromagnetic simulations of mutual coupling between the wires inside the transistor, which generally, in conventional CAD tools present a high computational cost. The electro-thermal model, enhanced by using the effective voltage approach, allowed us to predict not only the self-heating phenomena, but also the appropriate impedances for transistor´s maximum output power and maximum efficiency. In this way it was possible to select the operating conditions which can warrant low self-heating and the best trade-off between power, efficiency and linearity. The presented techniques are specifically important for the implementation of power amplifiers for the future wireless communication systems which must be designed to operate with broad band signals. The combination of our proposed techniques can allow the reduction of the design time and associated costs at industrial level. The improved design of experiment permitted to center the design of the transistor, making sure that the designer can get the best performances of the transistor. The thermal characterization allows to make sure that the microwave transistor operates below the maximum allowed temperature in a built power amplifier, which warrants the reliability of the system.
publishDate 2019
dc.date.accessioned.none.fl_str_mv 2024-07-05T19:11:51Z
dc.date.available.none.fl_str_mv 2024-07-05T19:11:51Z
dc.date.none.fl_str_mv 2019-06-25
dc.type.en-US.fl_str_mv review
dc.type.es-ES.fl_str_mv revisión
dc.type.none.fl_str_mv info:eu-repo/semantics/article
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_2df8fbb1
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status_str publishedVersion
dc.identifier.none.fl_str_mv https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784
10.19053/01211129.v28.n52.2019.9784
dc.identifier.uri.none.fl_str_mv https://repositorio.uptc.edu.co/handle/001/14248
url https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784
https://repositorio.uptc.edu.co/handle/001/14248
identifier_str_mv 10.19053/01211129.v28.n52.2019.9784
dc.language.none.fl_str_mv spa
dc.language.iso.spa.fl_str_mv spa
language spa
dc.relation.none.fl_str_mv https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784/8136
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784/8251
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dc.coverage.en-US.fl_str_mv N.A.
dc.coverage.es-ES.fl_str_mv N.A.
dc.publisher.en-US.fl_str_mv Universidad Pedagógica y Tecnológica de Colombia
dc.source.en-US.fl_str_mv Revista Facultad de Ingeniería; Vol. 28 No. 52 (2019); 99-122
dc.source.es-ES.fl_str_mv Revista Facultad de Ingeniería; Vol. 28 Núm. 52 (2019); 99-122
dc.source.none.fl_str_mv 2357-5328
0121-1129
institution Universidad Pedagógica y Tecnológica de Colombia
repository.name.fl_str_mv Repositorio Institucional UPTC
repository.mail.fl_str_mv repositorio.uptc@uptc.edu.co
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spelling 2019-06-252024-07-05T19:11:51Z2024-07-05T19:11:51Zhttps://revistas.uptc.edu.co/index.php/ingenieria/article/view/978410.19053/01211129.v28.n52.2019.9784https://repositorio.uptc.edu.co/handle/001/14248This paper presents a technique to improve the design process of microwave transistors based on two aspects: an improved design of experiment test (DOE), and an electro-thermal enhanced model (MET). The DOE test allowed us to center the design through variations in specific parameters, avoiding complex electromagnetic simulations of mutual coupling between the wires inside the transistor, which generally, in conventional CAD tools present a high computational cost. The electro-thermal model, enhanced by using the effective voltage approach, allowed us to predict not only the self-heating phenomena, but also the appropriate impedances for transistor´s maximum output power and maximum efficiency. In this way it was possible to select the operating conditions which can warrant low self-heating and the best trade-off between power, efficiency and linearity. The presented techniques are specifically important for the implementation of power amplifiers for the future wireless communication systems which must be designed to operate with broad band signals. The combination of our proposed techniques can allow the reduction of the design time and associated costs at industrial level. The improved design of experiment permitted to center the design of the transistor, making sure that the designer can get the best performances of the transistor. The thermal characterization allows to make sure that the microwave transistor operates below the maximum allowed temperature in a built power amplifier, which warrants the reliability of the system.Este artículo presenta una técnica para mejorar el proceso de diseño industrial de transistores de microondas, basado en un diseño de experimentos mejorado (DOE) y un modelado electrotérmico (MET) expandido. El diseño de experimentos DOE permitió centrar el diseño a través de variaciones en parámetros específicos, para evitar complejas simulaciones electromagnéticas de acoplamiento mutuo entre los cables dentro del mismo transistor, que generalmente en herramientas CAD convencionales presentan un elevado costo computacional. El modelo electrotérmico mejorado utilizando la técnica de voltajes efectivos posibilitó predecir no solo el autocalentamiento, sino también las impedancias apropiadas para la máxima potencia de salida y la máxima eficiencia del transistor. De esta manera fue posible elegir las condiciones de operación que garantizaran un reducido autocalentamiento, así como las mejores condiciones de potencia, eficiencia y linealidad. Las técnicas presentadas son útiles para la implementación de amplificadores de potencia en los futuros sistemas de comunicación inalámbricos, ya que deben trabajar con potencias elevadas que producen autocalentamiento y con señales de gran ancho de banda. La combinación de ambas técnicas permite la reducción de diseño y tiempo de producción en el ámbito industrial. El diseño de experimento mejorado posibilitó centrar el diseño del transistor para asegurar la obtención de los mejores desempeños del transistor. La caracterización térmica facilitó que el transistor de microondas, implementado en un circuito impreso de potencia, funcionara por debajo de la temperatura máxima permitida, lo que garantiza su vida útil y, en consecuencia, la confiabilidad del sistema de transmisión completo.application/pdfapplication/xmlspaspaUniversidad Pedagógica y Tecnológica de Colombiahttps://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784/8136https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784/8251Revista Facultad de Ingeniería; Vol. 28 No. 52 (2019); 99-122Revista Facultad de Ingeniería; Vol. 28 Núm. 52 (2019); 99-1222357-53280121-1129circuitsmicrowavepower semiconductorsradio communicationtransistorscircuitosmicroondasradiocomunicaciónsemiconductores de potenciatransistoresImprovements of the Design Process in the Microwave Transistors IndustryMejoras del proceso de diseño en la industria de transistores de microondasreviewrevisióninfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_2df8fbb1info:eu-repo/semantics/publishedVersionhttp://purl.org/coar/version/c_970fb48d4fbd8a136http://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/access_right/c_abf53http://purl.org/coar/access_right/c_abf2N.A.N.A.Rafael-Valdivia, Guillermo001/14248oai:repositorio.uptc.edu.co:001/142482025-07-18 11:53:14.398metadata.onlyhttps://repositorio.uptc.edu.coRepositorio Institucional UPTCrepositorio.uptc@uptc.edu.co