Theoretical and experimental comparison between tuned load and class-F power amplifiers
54 páginas : ilustraciones color, cuadros.
- Autores:
-
Pérez Mancera, Lady Fernanda
Restrepo Burgos, Norma
- Tipo de recurso:
- Trabajo de grado de pregrado
- Fecha de publicación:
- 2014
- Institución:
- Universidad Pedagógica y Tecnológica de Colombia
- Repositorio:
- RiUPTC: Repositorio Institucional UPTC
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.uptc.edu.co:001/1618
- Acceso en línea:
- https://repositorio.uptc.edu.co/handle/001/1618
- Palabra clave:
- Amplificadores de potencia
Microprocesadores - Diseño
Amplificadores (Electrónica)
Electrónica de potencia
Ingeniería Electrónica - Tesis y disertaciones académicas
- Rights
- openAccess
- License
- Copyright (c) 2014 Universidad Pedagógica y Tecnológica de Colombia
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Theoretical and experimental comparison between tuned load and class-F power amplifiers |
| title |
Theoretical and experimental comparison between tuned load and class-F power amplifiers |
| spellingShingle |
Theoretical and experimental comparison between tuned load and class-F power amplifiers Amplificadores de potencia Microprocesadores - Diseño Amplificadores (Electrónica) Electrónica de potencia Ingeniería Electrónica - Tesis y disertaciones académicas |
| title_short |
Theoretical and experimental comparison between tuned load and class-F power amplifiers |
| title_full |
Theoretical and experimental comparison between tuned load and class-F power amplifiers |
| title_fullStr |
Theoretical and experimental comparison between tuned load and class-F power amplifiers |
| title_full_unstemmed |
Theoretical and experimental comparison between tuned load and class-F power amplifiers |
| title_sort |
Theoretical and experimental comparison between tuned load and class-F power amplifiers |
| dc.creator.fl_str_mv |
Pérez Mancera, Lady Fernanda Restrepo Burgos, Norma |
| dc.contributor.advisor.spa.fl_str_mv |
Moreno Rubio, Jorge Julián |
| dc.contributor.author.spa.fl_str_mv |
Pérez Mancera, Lady Fernanda Restrepo Burgos, Norma |
| dc.subject.spa.fl_str_mv |
Amplificadores de potencia Microprocesadores - Diseño Amplificadores (Electrónica) Electrónica de potencia Ingeniería Electrónica - Tesis y disertaciones académicas |
| topic |
Amplificadores de potencia Microprocesadores - Diseño Amplificadores (Electrónica) Electrónica de potencia Ingeniería Electrónica - Tesis y disertaciones académicas |
| description |
54 páginas : ilustraciones color, cuadros. |
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2014 |
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2014 |
| dc.date.accessioned.none.fl_str_mv |
2017-02-16T20:32:47Z |
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2017-02-16T20:32:47Z |
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Trabajo de grado - Pregrado |
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Pérez Mancera, L. F. y Restrepo Burgos, N. (2014). Theoretical and experimental comparison between tuned load and class-F power amplifiers. (Undergraduate work). Universidad Pedagógica y Tecnológica de Colombia, Sogamoso. http://repositorio.uptc.edu.co/jspui/handle/001/1618 |
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https://repositorio.uptc.edu.co/handle/001/1618 |
| dc.identifier.local.none.fl_str_mv |
T CD E49.14 P438 ej.1 |
| identifier_str_mv |
Pérez Mancera, L. F. y Restrepo Burgos, N. (2014). Theoretical and experimental comparison between tuned load and class-F power amplifiers. (Undergraduate work). Universidad Pedagógica y Tecnológica de Colombia, Sogamoso. http://repositorio.uptc.edu.co/jspui/handle/001/1618 T CD E49.14 P438 ej.1 |
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https://repositorio.uptc.edu.co/handle/001/1618 |
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eng |
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eng |
| dc.relation.references.spa.fl_str_mv |
Bumman Kim, Junghwan Moon, and Ildu Kim. \E ciently ampli ed". IEEE Microw. Mag, 11(5):87{100, 2010. K. Kim and R. Prasad. \4G: Roadmap and Emerging Communication Technologies". Artech House. Incorporated, 2006. S Gao, P Butterworth, A Sambell, C Sanabria, H Xu, S Heikman, U Mishra, and RA York. \Microwave class-F and inverse class-F power ampli ers designs using GaN technology and GaAs pHEMT". pages 1719{1722, 2006. Hyun-chul Park, Gunhyun Ahn, Sung-chan Jung, Cheon-seok Park, Wan-soo Nah, Byungsung Kim, and Youngoo Yang. \ High-e ciency class-F ampli er design in the presence of internal parasitic components of transistors". In Microwave Conference, 2006. 36th European, pages 184{187. IEEE, 2006. Paolo Colantonio, Franco Giannini, and Ernesto Limiti. High e ciency RF and microwave solid state power ampli ers. J. Wiley, 2009. Jie Fang, J Moreno, R Quaglia, Riccardo Tinivella, V Camarchia, M Pirola, and G Ghione. \Development strategy for GaN-based high-e ciency hybrid medium-power RF ampli ers through low-cost substrate prototyping". pages 1{4, 2010. P. Colantonio, F. Giannini, E. Limiti, and V. Teppati. \An approach to harmonic load- and source-pull measurements for high-e ciency PA design". IEEE Transactions on Microwave Theory and Techniques, 52(1):191{198, Jan 2004. L El Maazouzi, P Colantonio, A Mediavilla, and F Giannini. \A 3.5 GHz 2nd harmonic tuned PA design". pages 1090{1093, 2009. P. Colantonio, F. Giannini, and E. Limiti. \Nonlinear approaches to the design of microwave power ampli ers". International Journal of RF and Microwave Computer-Aided Engineering, 2004. L El Maazouzi, P Colantonio, A Mediavilla, and F Giannini. \A 3.5 GHz 2nd harmonic tuned PA design". pages 1090{1093, 2009. P. Colantonio, F. Giannini, and E. Limiti. \Nonlinear approaches to the design of microwave power ampli ers". International Journal of RF and Microwave Computer-Aided Engineering, 2004. Behzad Razavi and Razavi Behzad. RF microelectronics, volume 1. Prentice Hall New Jersey, 1998. Guillermo Gonzalez. Microwave transistor ampli ers: analysis and design, volume 2. Prentice hall New Jersey, 1997. Steve C. Cripps. RF Power Ampli ers for Wireless Communications. Artech House, Inc., Norwood, MA, USA, 2006. A. A M Saleh and D.C. Cox. \Improving the Power-Added E ciency of FET Ampli ers Operating with Varying-Envelope Signals". IEEE Transactions on Microwave Theory and Techniques, 31(1):51{56, Jan 1983. Guodong Su, Lingling Sun, Jincai Wen, Huang Wang, Zhiping Yu, and Nan Zhang. \An estimable stability method applied to power ampli er design". In Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE, pages 1{4. IEEE, 2011. George D Vendelin, Anthony M Pavio, and Ulrich L Rohde. Microwave circuit design using linear and nonlinear techniques. John Wiley & Sons, 2005. Raymond S Pengelly, Simon M Wood, James W Milligan, Scott T Sheppard, and William L Pribble. \A review of GaN on SiC high electron-mobility power transistors and MMICs". IEEE Transactions on Microwave Theory and Techniques, 60(6):1764{1783, 2012. P Colantonio, F Giannini, and E Limiti. \HF class F design guidelines". In Microwaves, Radar and Wireless Communications, 2004. MIKON-2004. 15th International Conference on, volume 1, pages 27{37. IEEE, 2004. Jorge Juli an Moreno Rubio, Andr es Fernando Jimenez L opez, and Nelson Barrera Lombana. \THE TUNED LOAD POWER AMPLIFIER". COLOMBIAN JOURNAL OF ADVANCED TECHNOLOGIES, 2(22), 2013. Junghwan Moon, Seunghoon Jee, Jungjoon Kim, Jangheon Kim, and Bumman Kim. \Behaviors of Class-F and Class-Ampli ers". IEEE Transactions on Microwave Theory and Techniques, 60(6):1937{1951, 2012. Cree Corporation. \Datasheet CGH40010". Rev. 3.1, 2006-2011. Julian Moreno, William Cuevas, and Edison Angarita. \Extraccion de la red parasita de la salida en dispositivos GaN-HEMT para aplicaciones en alta frecuencia". 2014. Julian Moreno, Nidia Cely, Javier Rodriguez, Juan Pachon, and Juan Espana. \Estrategia de diseño para un ampli cador de potencia de alta e ciencia Clase F a 1.9 GHz". 2014. Jorge Moreno, Jie Fang, Roberto Quaglia, Vittorio Camarchia, Marco Pirola, and Giovanni Ghione. \Development of single-stage and doherty GaN-based hybrid RF power ampli ers for quasi-constant envelope and high peak to average power ratio wireless standards". Microwave and optical technology letters, 54(1):206{210, 2012. Jorge Moreno Rubio, Jie Fang, Roberto Quaglia, V Camarchia, M Pirola, S Donati Guerrieri, and Giovanni Ghione. \A 22W 65% e ciency GaN Doherty power ampli er at 3.5 GHz for WiMAX applications". In Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on, pages 1{4. IEEE, 2011. Jie Fang, Roberto Quaglia, J Moreno Rubio, V Camarchia, M Pirola, S Donati Guerrieri, and G Ghione. \Design and baseband predistortion of a 43.5 dBm GaN Doherty ampli er for 3.5 GHz WiMAX applications". In Microwave Integrated Circuits Conference (EuMIC), 2011 European, pages 256{259. IEEE, 2011. Shirt Fun Ooi, Steven Gao, A Sambell, D Smith, and P Butterworth. \High e ciency class-F power ampli er design". pages 113{118, 2004. Young Yun Woo, Youngoo Yang, and Bumman Kim. \Analysis and experiments for high-e ciency class-F and inverse class-F power ampli ers". IEEE Transactions on Microwave Theory and Techniques, 54(5):1969{1974, 2006. Song Liu and Dominique Schreurs. \Intrinsic Class-F RF GaN Power Ampli er with a Commercial Transistor Based on a Modi ed "Hybrid" Approach". pages 1{3, Sept 2012. Daehyun Kang, Daekyu Yu, Kyoungjoon Min, Kichon Han, Jinsung Choi, Dongsu Kim, Boshi Jin, Myoungsu Jun, and Bumman Kim. \A highly e cient and linear class-AB/F power ampli er for multimode operation". IEEE Transactions on Microwave Theory and Techniques, 56(1):77{87, 2008. Elisa Cipriani, Paolo Colantonio, Franco Giannini, and Rocco Giofr e. \ Theoretical and experimental comparison of Class F vs. Class F- 1 PAs". In Microwave Integrated Circuits Conference (EuMIC), 2010 European, pages 428{431. IEEE, 2010. |
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Copyright (c) 2014 Universidad Pedagógica y Tecnológica de Colombia |
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Moreno Rubio, Jorge Julián5d3ea2794d7cc6a1045aeb93e6cab000-1Pérez Mancera, Lady Fernanda5d70a95f0e2b15cf38395f49e0c1c9cb-1Restrepo Burgos, Normaaa7bfc44f67dae2292b0d97003932cb4-12017-02-16T20:32:47Z2017-02-16T20:32:47Z2014Pérez Mancera, L. F. y Restrepo Burgos, N. (2014). Theoretical and experimental comparison between tuned load and class-F power amplifiers. (Undergraduate work). Universidad Pedagógica y Tecnológica de Colombia, Sogamoso. http://repositorio.uptc.edu.co/jspui/handle/001/1618https://repositorio.uptc.edu.co/handle/001/1618T CD E49.14 P438 ej.154 páginas : ilustraciones color, cuadros.This document presents the principles of these two high e ciency power ampli ers. Then the design methodology and realization based on the same active device are described. Finally, the obtained results that show the performance especially of drain e ciency, gain and output power are compared between both ampli ers.PregradoIngeniero Electrónicoapplication/pdfengUniversidad Pedagógica y Tecnológica de ColombiaEscuela de Ingeniería ElectrónicaFacultad Seccional SogamosoCopyright (c) 2014 Universidad Pedagógica y Tecnológica de Colombiahttps://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessAtribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0)http://purl.org/coar/access_right/c_abf2Amplificadores de potenciaMicroprocesadores - DiseñoAmplificadores (Electrónica)Electrónica de potenciaIngeniería Electrónica - Tesis y disertaciones académicasTheoretical and experimental comparison between tuned load and class-F power amplifiersTrabajo de grado - Pregradohttp://purl.org/coar/resource_type/c_7a1finfo:eu-repo/semantics/bachelorThesisinfo:eu-repo/semantics/publishedVersionTexthttps://purl.org/redcol/resource_type/TPhttp://purl.org/coar/version/c_970fb48d4fbd8a85Bumman Kim, Junghwan Moon, and Ildu Kim. \E ciently ampli ed". IEEE Microw. Mag, 11(5):87{100, 2010.K. Kim and R. Prasad. \4G: Roadmap and Emerging Communication Technologies". Artech House. Incorporated, 2006.S Gao, P Butterworth, A Sambell, C Sanabria, H Xu, S Heikman, U Mishra, and RA York. \Microwave class-F and inverse class-F power ampli ers designs using GaN technology and GaAs pHEMT". pages 1719{1722, 2006.Hyun-chul Park, Gunhyun Ahn, Sung-chan Jung, Cheon-seok Park, Wan-soo Nah, Byungsung Kim, and Youngoo Yang. \ High-e ciency class-F ampli er design in the presence of internal parasitic components of transistors". In Microwave Conference, 2006. 36th European, pages 184{187. IEEE, 2006.Paolo Colantonio, Franco Giannini, and Ernesto Limiti. High e ciency RF and microwave solid state power ampli ers. J. Wiley, 2009.Jie Fang, J Moreno, R Quaglia, Riccardo Tinivella, V Camarchia, M Pirola, and G Ghione. \Development strategy for GaN-based high-e ciency hybrid medium-power RF ampli ers through low-cost substrate prototyping". pages 1{4, 2010.P. Colantonio, F. Giannini, E. Limiti, and V. Teppati. \An approach to harmonic load- and source-pull measurements for high-e ciency PA design". IEEE Transactions on Microwave Theory and Techniques, 52(1):191{198, Jan 2004.L El Maazouzi, P Colantonio, A Mediavilla, and F Giannini. \A 3.5 GHz 2nd harmonic tuned PA design". pages 1090{1093, 2009.P. Colantonio, F. Giannini, and E. Limiti. \Nonlinear approaches to the design of microwave power ampli ers". International Journal of RF and Microwave Computer-Aided Engineering, 2004.L El Maazouzi, P Colantonio, A Mediavilla, and F Giannini. \A 3.5 GHz 2nd harmonic tuned PA design". pages 1090{1093, 2009.P. Colantonio, F. Giannini, and E. Limiti. \Nonlinear approaches to the design of microwave power ampli ers". International Journal of RF and Microwave Computer-Aided Engineering, 2004.Behzad Razavi and Razavi Behzad. RF microelectronics, volume 1. Prentice Hall New Jersey, 1998.Guillermo Gonzalez. Microwave transistor ampli ers: analysis and design, volume 2. Prentice hall New Jersey, 1997.Steve C. Cripps. RF Power Ampli ers for Wireless Communications. Artech House, Inc., Norwood, MA, USA, 2006.A. A M Saleh and D.C. Cox. \Improving the Power-Added E ciency of FET Ampli ers Operating with Varying-Envelope Signals". IEEE Transactions on Microwave Theory and Techniques, 31(1):51{56, Jan 1983.Guodong Su, Lingling Sun, Jincai Wen, Huang Wang, Zhiping Yu, and Nan Zhang. \An estimable stability method applied to power ampli er design". In Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE, pages 1{4. IEEE, 2011.George D Vendelin, Anthony M Pavio, and Ulrich L Rohde. Microwave circuit design using linear and nonlinear techniques. John Wiley & Sons, 2005.Raymond S Pengelly, Simon M Wood, James W Milligan, Scott T Sheppard, and William L Pribble. \A review of GaN on SiC high electron-mobility power transistors and MMICs". IEEE Transactions on Microwave Theory and Techniques, 60(6):1764{1783, 2012.P Colantonio, F Giannini, and E Limiti. \HF class F design guidelines". In Microwaves, Radar and Wireless Communications, 2004. MIKON-2004. 15th International Conference on, volume 1, pages 27{37. IEEE, 2004.Jorge Juli an Moreno Rubio, Andr es Fernando Jimenez L opez, and Nelson Barrera Lombana. \THE TUNED LOAD POWER AMPLIFIER". COLOMBIAN JOURNAL OF ADVANCED TECHNOLOGIES, 2(22), 2013.Junghwan Moon, Seunghoon Jee, Jungjoon Kim, Jangheon Kim, and Bumman Kim. \Behaviors of Class-F and Class-Ampli ers". IEEE Transactions on Microwave Theory and Techniques, 60(6):1937{1951, 2012.Cree Corporation. \Datasheet CGH40010". Rev. 3.1, 2006-2011.Julian Moreno, William Cuevas, and Edison Angarita. \Extraccion de la red parasita de la salida en dispositivos GaN-HEMT para aplicaciones en alta frecuencia". 2014.Julian Moreno, Nidia Cely, Javier Rodriguez, Juan Pachon, and Juan Espana. \Estrategia de diseño para un ampli cador de potencia de alta e ciencia Clase F a 1.9 GHz". 2014.Jorge Moreno, Jie Fang, Roberto Quaglia, Vittorio Camarchia, Marco Pirola, and Giovanni Ghione. \Development of single-stage and doherty GaN-based hybrid RF power ampli ers for quasi-constant envelope and high peak to average power ratio wireless standards". Microwave and optical technology letters, 54(1):206{210, 2012.Jorge Moreno Rubio, Jie Fang, Roberto Quaglia, V Camarchia, M Pirola, S Donati Guerrieri, and Giovanni Ghione. \A 22W 65% e ciency GaN Doherty power ampli er at 3.5 GHz for WiMAX applications". In Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on, pages 1{4. IEEE, 2011.Jie Fang, Roberto Quaglia, J Moreno Rubio, V Camarchia, M Pirola, S Donati Guerrieri, and G Ghione. \Design and baseband predistortion of a 43.5 dBm GaN Doherty ampli er for 3.5 GHz WiMAX applications". In Microwave Integrated Circuits Conference (EuMIC), 2011 European, pages 256{259. IEEE, 2011.Shirt Fun Ooi, Steven Gao, A Sambell, D Smith, and P Butterworth. \High e ciency class-F power ampli er design". pages 113{118, 2004.Young Yun Woo, Youngoo Yang, and Bumman Kim. \Analysis and experiments for high-e ciency class-F and inverse class-F power ampli ers". IEEE Transactions on Microwave Theory and Techniques, 54(5):1969{1974, 2006.Song Liu and Dominique Schreurs. \Intrinsic Class-F RF GaN Power Ampli er with a Commercial Transistor Based on a Modi ed "Hybrid" Approach". pages 1{3, Sept 2012.Daehyun Kang, Daekyu Yu, Kyoungjoon Min, Kichon Han, Jinsung Choi, Dongsu Kim, Boshi Jin, Myoungsu Jun, and Bumman Kim. \A highly e cient and linear class-AB/F power ampli er for multimode operation". IEEE Transactions on Microwave Theory and Techniques, 56(1):77{87, 2008.Elisa Cipriani, Paolo Colantonio, Franco Giannini, and Rocco Giofr e. \ Theoretical and experimental comparison of Class F vs. Class F- 1 PAs". In Microwave Integrated Circuits Conference (EuMIC), 2010 European, pages 428{431. 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