Estudios de perfiles de profundidad AES y fotoconductividad de películas delgadas de AgInS2 preparadas por co-evaporación

In this study, thin films of AgInS2 with chalcopyrite-type tetragonal structure were grown by means of a procedure based on the sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process. The effect of the growth temperature and the proportion of the evaporated Ag mass in relation to the evaporated In mass (mAg/mIn) on the phase and homogeneity in the chemical composition were researched through X-ray diffraction measurements and Auger electrons spectroscopy. These measurements evidenced that the conditions for preparing thin films containing only the AgInS2 phase, grown with tetragonal chalcopyrite-type structure and good homogeneity of the chemical composition in the entire volume, are a temperature of 500 ºC and a 0.89 mAg/mIn proportion.

• Autores: Arredondo, C A; Universidad de Medellín.; Calderón, C; Universidad Nacional de Colombia, Bogotá.; Pérez, P Bartolo; Departamento de Física Aplicada, CINVESTAV- IPN; Gordillo, G; Universidad Nacional de Colombia; Romero, E; Universidad Nacional de Colombia
• Tipo de recurso: Article of journal
• Fecha de publicación: 2014
• Institución: Universidad de Medellín
• Repositorio: Repositorio UDEM
• Idioma: spa; eng
• OAI Identifier: oai:repository.udem.edu.co:11407/1822
• Acceso en línea: http://hdl.handle.net/11407/1822
• Palabra clave: XRD; AES; solar cells; thin films; XRD; AES; celdas solares; películas delgadas
• License: http://creativecommons.org/licenses/by-nc-sa/4.0/