A study on the effects of an externally applied electric field on the linear optical absorption and relative refractive index change associated with transitions between off-center donor impurity states in laterally coupled quantum dot-ring system is reported. Electron states are calculated within th...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2015
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- eng
- OAI Identifier:
- oai:repository.udem.edu.co:11407/1343
- Acceso en línea:
- http://hdl.handle.net/11407/1343
- Palabra clave:
- Electric fields
Electromagnetic wave absorption
Light absorption
Quantum theory
Refractive index
Semiconductor quantum dots
Coupled quantum dots
Donor impurity state
Dot-ring system
Exact diagonalization
Geometrical distribution
Optical response
Parabolic bands
Refractive index changes
Semiconductor quantum wells
- Rights
- restrictedAccess
- License
- http://purl.org/coar/access_right/c_16ec
| Summary: | A study on the effects of an externally applied electric field on the linear optical absorption and relative refractive index change associated with transitions between off-center donor impurity states in laterally coupled quantum dot-ring system is reported. Electron states are calculated within the effective mass and parabolic band approximations by means of an exact diagonalization procedure. The states and the optical response in each case show significant sensitivity to the geometrical distribution of confining energies as well as to the strength of the applied field. |
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