Twisted bilayer blue phosphorene: A direct band gap semiconductor

We report that two rotated layers of blue phosphorene behave as a direct band gap semiconductor. The optical spectrum shows absorption peaks in the visible region of the spectrum and in addition the energy of these peaks can be tuned with the rotational angle. These findings makes twisted bilayer bl...

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Autores:
Tipo de recurso:
Fecha de publicación:
2016
Institución:
Universidad de Medellín
Repositorio:
Repositorio UDEM
Idioma:
eng
OAI Identifier:
oai:repository.udem.edu.co:11407/2873
Acceso en línea:
http://hdl.handle.net/11407/2873
Palabra clave:
ab initio
Phosphorene
Twisted
Absorption spectroscopy
Calculations
III-V semiconductors
Ab initio
Ab initio calculations
Absorption peaks
Direct band gap semiconductors
Phosphorene
Rotational angle
Twisted
Twisted bilayers
Energy gap
Rights
restrictedAccess
License
http://purl.org/coar/access_right/c_16ec
Description
Summary:We report that two rotated layers of blue phosphorene behave as a direct band gap semiconductor. The optical spectrum shows absorption peaks in the visible region of the spectrum and in addition the energy of these peaks can be tuned with the rotational angle. These findings makes twisted bilayer blue phosphorene a strong candidate as a solar cell or photodetection device. Our results are based on ab initio calculations of several rotated blue phosphorene layers.