LO-Phonons and dielectric polarization effects on the electronic properties of doped GaN/InN spherical core/shell quantum dots in a nonparabolic band model
The electron energy spectrum of a core/shell spherical quantum dot made of zincblende GaN/InN compounds is investigated taking into account the presence of an off-center donor atom and the influence of band nonparabolicity. The interaction of both the charge carrier and the Coulombic core with longi...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2021
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- eng
- OAI Identifier:
- oai:repository.udem.edu.co:11407/5894
- Acceso en línea:
- http://hdl.handle.net/11407/5894
- Palabra clave:
- Band nonparabolicity
Core–Shell
Dielectric mismatch
Polaron effects
Spherical quantum dot
Zincblende III–V nitrides
Conduction bands
Electron-phonon interactions
Electronic properties
Gallium nitride
Ground state
III-V semiconductors
Nanocrystals
Semiconductor quantum dots
Semiconductor quantum wells
Zinc sulfide
Core/shell quantum dots
Dielectric polarization
Effective-mass equation
Electron energy spectrum
Ground-state energies
Impurity binding energy
Longitudinal optical phonons
Spherical quantum dot
Binding energy
- Rights
- License
- http://purl.org/coar/access_right/c_16ec
Summary: | The electron energy spectrum of a core/shell spherical quantum dot made of zincblende GaN/InN compounds is investigated taking into account the presence of an off-center donor atom and the influence of band nonparabolicity. The interaction of both the charge carrier and the Coulombic core with longitudinal optical phonons is included through Frö hlich and Aldrich-Bajaj theories, respectively. The ground state energy is determined by solving the resulting conduction band effective mass equation via the variational Ritz principle. A detailed analysis of the features of electron and hole spectra as functions of the core and shell sizes is presented, highlighting the possibility of transitioning between type-I and type-II structures. A detailed discussion about the effects of conduction band nonparabolicity, dielectric mismatch and electron-phonon interaction onto the impurity binding energy is provided. It was found that, in general, nonparabolicity of the conduction band leads to larger impurity binding energy, and that LO-phonon and dielectric mismatch effects tend to reduce the value of the latter quantity. © 2021, Springer-Verlag GmbH Germany, part of Springer Nature. |
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