Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab

We present numerical predictions for the photonic TE-like band gap ratio and the quality factors of symmetric localized defect as a function of the thickness slab and temperature by the use of plane wave expansion and the finite-difference time-domain methods. The photonic-crystal hole slab is composed of a 2D hexagonal array with identical air holes and a circular cross section, embedded in a non-dispersive III–V semiconductor quaternary alloy slab, which has a high value of dielectric function in the near-infrared region, and the symmetric defect is formed by increasing the radius of a single hole in the 2D hexagonal lattice. We show that the band gap ratio depends linearly on the temperature in the range 150–400 K. Our results show a strong temperature dependence of the quality factor Q, the maximum ( Q=7000 ) is reached at T=350K, but if the temperature continues to increase, the efficiency drops sharply. Furthermore, we present numerical predictions for the electromagnetic field distribution at T=350K

• Autores: Sánchez Cano, Robert; Porras Montenegro, Nelson
• Tipo de recurso: Article of journal
• Fecha de publicación: 2016
• Institución: Universidad Autónoma de Occidente
• Repositorio: RED: Repositorio Educativo Digital UAO
• Idioma: eng
• OAI Identifier: oai:red.uao.edu.co:10614/11077
• Acceso en línea: http://hdl.handle.net/10614/11077; https://link.springer.com/article/10.1007/s00339-016-9906-0; https://link.springer.com/content/pdf/10.1007%2Fs00339-016-9906-0.pdf
• Palabra clave: Campos electromagnéticos; Electromagnetic fields; Electromagnetismo; Optoelectrónica; Aleaciones magnéticas; Optoelectronics; Electromagnetism; Magnetic alloys
• Rights: openAccess
• License: Derechos Reservados - Springer-Verlag Berlin Heidelberg 2016