Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures
Se presenta la caracterización eléctrica de CA de la estructura de Au / silicio poroso / p-Si. Las capas de silicio poroso de baja porosidad se prepararon mediante ataque electroquímico en silicio de tipo p100 con dos resistividades. Las medidas eléctricas de CA capacitancia-conductancia-frecuencia...
- Autores:
-
Fonthal Rico, Faruk
Chavarria, Mario Andrés
- Tipo de recurso:
- Article of journal
- Fecha de publicación:
- 2011
- Institución:
- Universidad Autónoma de Occidente
- Repositorio:
- RED: Repositorio Educativo Digital UAO
- Idioma:
- eng
- OAI Identifier:
- oai:red.uao.edu.co:10614/11997
- Acceso en línea:
- http://red.uao.edu.co//handle/10614/11997
- Palabra clave:
- porous silicon
impedance spectra
equivalent circuit models
metal−semiconductors structure
capacitance
- Rights
- openAccess
- License
- Derechos Reservados - Universidad Autónoma de Occidente
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Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures |
| title |
Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures |
| spellingShingle |
Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures porous silicon impedance spectra equivalent circuit models metal−semiconductors structure capacitance |
| title_short |
Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures |
| title_full |
Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures |
| title_fullStr |
Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures |
| title_full_unstemmed |
Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures |
| title_sort |
Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures |
| dc.creator.fl_str_mv |
Fonthal Rico, Faruk Chavarria, Mario Andrés |
| dc.contributor.author.none.fl_str_mv |
Fonthal Rico, Faruk Chavarria, Mario Andrés |
| dc.subject.proposal.eng.fl_str_mv |
porous silicon impedance spectra equivalent circuit models metal−semiconductors structure capacitance |
| topic |
porous silicon impedance spectra equivalent circuit models metal−semiconductors structure capacitance |
| description |
Se presenta la caracterización eléctrica de CA de la estructura de Au / silicio poroso / p-Si. Las capas de silicio poroso de baja porosidad se prepararon mediante ataque electroquímico en silicio de tipo p100 con dos resistividades. Las medidas eléctricas de CA capacitancia-conductancia-frecuencia se realizaron de 5 Hz a 10 MHz, a temperatura ambiente en el rango de CC de +/- 2 V. Estudiamos dos estructuras; primero un conductor tipo Au / PS / Au y segundo un diodo tipo Au / PS / p-Si / Al. Encontramos la relación entre el voltaje de polarización en las heteroestructuras de PS / p-Si con la formación de la región de agotamiento y el mecanismo de conducción presente en estas estructuras. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| publishDate |
2011 |
| dc.date.issued.none.fl_str_mv |
2011-06 |
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2020-02-26T20:42:32Z |
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2020-02-26T20:42:32Z |
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Artículo de revista |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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http://purl.org/coar/resource_type/c_6501 |
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Text |
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info:eu-repo/semantics/article |
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publishedVersion |
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http://red.uao.edu.co//handle/10614/11997 |
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DOI: 10.1002/pssc.201000577 |
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http://red.uao.edu.co//handle/10614/11997 |
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DOI: 10.1002/pssc.201000577 |
| dc.language.iso.eng.fl_str_mv |
eng |
| language |
eng |
| dc.relation.eng.fl_str_mv |
Physica Status Solidi (C) Current Topics in Solid State Physics. Volumen 8, número 6, (junio 2011); páginas1913 - 1917 |
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6 |
| dc.relation.citationvolume.none.fl_str_mv |
8 |
| dc.relation.cites.spa.fl_str_mv |
Fonthal Rico, F., Chavarria, M. A (2011). Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures. Physica Status Solidi (C) Current Topics in Solid State Physics. 8(6),1913 - 1917. https://doi.org/10.1002/pssc.201000577 |
| dc.relation.ispartofjournal.eng.fl_str_mv |
Physica Status Solidi (C) Current Topics in Solid State Physics |
| dc.rights.spa.fl_str_mv |
Derechos Reservados - Universidad Autónoma de Occidente |
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http://purl.org/coar/access_right/c_abf2 |
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https://creativecommons.org/licenses/by-nc-nd/4.0/ |
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info:eu-repo/semantics/openAccess |
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Atribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0) |
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Derechos Reservados - Universidad Autónoma de Occidente https://creativecommons.org/licenses/by-nc-nd/4.0/ Atribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0) http://purl.org/coar/access_right/c_abf2 |
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application/pdf |
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Universidad Autónoma de Occidente. Calle 25 115-85. Km 2 vía Cali-Jamundí |
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Wiley |
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Universidad Autónoma de Occidente |
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Fonthal Rico, Farukvirtual::1755-1Chavarria, Mario Andrés93c2239b079e5a2ad86652b413401d66Universidad Autónoma de Occidente. Calle 25 115-85. Km 2 vía Cali-Jamundí2020-02-26T20:42:32Z2020-02-26T20:42:32Z2011-06http://red.uao.edu.co//handle/10614/11997DOI: 10.1002/pssc.201000577Se presenta la caracterización eléctrica de CA de la estructura de Au / silicio poroso / p-Si. Las capas de silicio poroso de baja porosidad se prepararon mediante ataque electroquímico en silicio de tipo p100 con dos resistividades. Las medidas eléctricas de CA capacitancia-conductancia-frecuencia se realizaron de 5 Hz a 10 MHz, a temperatura ambiente en el rango de CC de +/- 2 V. Estudiamos dos estructuras; primero un conductor tipo Au / PS / Au y segundo un diodo tipo Au / PS / p-Si / Al. Encontramos la relación entre el voltaje de polarización en las heteroestructuras de PS / p-Si con la formación de la región de agotamiento y el mecanismo de conducción presente en estas estructuras. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimThe AC electrical characterization of Au/porous silicon/p-Si structure is presented. The low porosity porous silicon layers were prepared by electrochemical etching in p-type silicon < 100 > with two resistivities. The AC electrical measurements capacitance-conductance- frequency were performed from 5 Hz to 10 MHz, at room temperature in the DC range of +/- 2 V. We studied two structures; first a conductor type Au/PS/Au and second diode type Au/PS/p-Si/Al. We found the relationship between the bias voltage in the PS/p-Si heterostructures with the depletion region formation and the conduction mechanism presents in these structures. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimapplication/pdfengWileyPhysica Status Solidi (C) Current Topics in Solid State Physics. Volumen 8, número 6, (junio 2011); páginas1913 - 191768Fonthal Rico, F., Chavarria, M. A (2011). Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p-Si structures. 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