Macroporous silicon: efficient antireflective layer on crystalline silicon
A macroporous silicon layer (ma-PS) electrochemically grown on crystalline silicon surface can be used as an efficient antireflective layer in optical devices as antireflection coating. In this work, we presented the ma-PS layers fabricated on crystalline silicon (c-Si) n-type and p +-type, obtained...
- Autores:
-
Fonthal Rico, Faruk
Torres Chávez, Ivaldo
Rodríguez, Ángel
- Tipo de recurso:
- Article of journal
- Fecha de publicación:
- 2011
- Institución:
- Universidad Autónoma de Occidente
- Repositorio:
- RED: Repositorio Educativo Digital UAO
- Idioma:
- eng
- OAI Identifier:
- oai:red.uao.edu.co:10614/11902
- Acceso en línea:
- http://red.uao.edu.co//handle/10614/11902
https://www.researchgate.net/publication/242206332_Macroporous_silicon_Efficient_antireflective_layer_on_crystalline_silicon
- Palabra clave:
- Porous silicon
Crystalline silicon
Electrochemical etching
Antireflective coating
Etching time
- Rights
- openAccess
- License
- Derechos Reservados - Universidad Autónoma de Occidente
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dc.title.eng.fl_str_mv |
Macroporous silicon: efficient antireflective layer on crystalline silicon |
title |
Macroporous silicon: efficient antireflective layer on crystalline silicon |
spellingShingle |
Macroporous silicon: efficient antireflective layer on crystalline silicon Porous silicon Crystalline silicon Electrochemical etching Antireflective coating Etching time |
title_short |
Macroporous silicon: efficient antireflective layer on crystalline silicon |
title_full |
Macroporous silicon: efficient antireflective layer on crystalline silicon |
title_fullStr |
Macroporous silicon: efficient antireflective layer on crystalline silicon |
title_full_unstemmed |
Macroporous silicon: efficient antireflective layer on crystalline silicon |
title_sort |
Macroporous silicon: efficient antireflective layer on crystalline silicon |
dc.creator.fl_str_mv |
Fonthal Rico, Faruk Torres Chávez, Ivaldo Rodríguez, Ángel |
dc.contributor.author.none.fl_str_mv |
Fonthal Rico, Faruk |
dc.contributor.author.spa.fl_str_mv |
Torres Chávez, Ivaldo Rodríguez, Ángel |
dc.subject.eng.fl_str_mv |
Porous silicon Crystalline silicon Electrochemical etching Antireflective coating |
topic |
Porous silicon Crystalline silicon Electrochemical etching Antireflective coating Etching time |
dc.subject.spa.fl_str_mv |
Etching time |
description |
A macroporous silicon layer (ma-PS) electrochemically grown on crystalline silicon surface can be used as an efficient antireflective layer in optical devices as antireflection coating. In this work, we presented the ma-PS layers fabricated on crystalline silicon (c-Si) n-type and p +-type, obtained by electrochemical etching. The morphology, porosity, thickness of ma-PS layer can be adjusted by controlling the electrochemical formation conditions. The optical behaviour of the antireflective coating over the solar spectrum is determined, resulting in very low values of the normalized reflectivity coefficient (below ~1%). The reflectivity measurements were evaluated at 45° in the different samples of the ma-PS/c-Si |
publishDate |
2011 |
dc.date.issued.spa.fl_str_mv |
2011-07 |
dc.date.accessioned.spa.fl_str_mv |
2020-02-14T20:32:52Z |
dc.date.available.spa.fl_str_mv |
2020-02-14T20:32:52Z |
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Artículo de revista |
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dc.identifier.citation.eng.fl_str_mv |
Fonthal Rico, Faruk; Torres Chávez, Ivaldo; Rodriguez, Angel. Macroporous silicon: efficient antireflective layer on crystalline silicon. En: Journal of Materials Science: Materials in Electronics. Volumen 22, número 7, (julio 2011); páginas 895-900 |
dc.identifier.issn.spa.fl_str_mv |
0957-4522 |
dc.identifier.uri.eng.fl_str_mv |
http://red.uao.edu.co//handle/10614/11902 https://www.researchgate.net/publication/242206332_Macroporous_silicon_Efficient_antireflective_layer_on_crystalline_silicon |
dc.identifier.doi.eng.fl_str_mv |
doi10.1007/s10854-010-0232-6 |
identifier_str_mv |
Fonthal Rico, Faruk; Torres Chávez, Ivaldo; Rodriguez, Angel. Macroporous silicon: efficient antireflective layer on crystalline silicon. En: Journal of Materials Science: Materials in Electronics. Volumen 22, número 7, (julio 2011); páginas 895-900 0957-4522 doi10.1007/s10854-010-0232-6 |
url |
http://red.uao.edu.co//handle/10614/11902 https://www.researchgate.net/publication/242206332_Macroporous_silicon_Efficient_antireflective_layer_on_crystalline_silicon |
dc.language.iso.eng.fl_str_mv |
eng |
language |
eng |
dc.relation.eng.fl_str_mv |
Journal of Materials Science: Materials in Electronics. Volumen 22, número 7, (julio 2011); páginas 895-900 |
dc.relation.references.eng.fl_str_mv |
A. Prasad, S. Balakrishnan, S.K. Jain, G.C. Jain, J. Electrochem.Soc. 129, 596 (1982). L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990. S. Yae et al., Solar Ener. 80, 701 (2006). B. Gonza´lez-Dı´az et al., Physica E 38, 215 (2007). T.D. James et al., in International Conferrence on Nanoscience and Nanotechnology, (ICONN 2006, Brisbane, Australia, 2006. M.J. Huang, C.R. Yang, Y.C. Chiou, R.T. Lee, Solar Ener. Mat.Solar Cell 92, 13526 (2008). N. Marrero, R. Guerrero-Lemus, B. Gonza´lez-Dı´az, D. Borchert,Thin Solid Film 517, 2648 (2009). A.M. Rossi, H.G. Bohn, Phys. Status Solidi. (a) 202, 1644 (2005). U. Gangopadhyay et al., Solar Ener. Mat. Solar Cell 91, 285(2007). F. Fonthal et al., in AIP Conferrence Proceedings VI RIAO/IX OPTILAS. vol. 992, (2008), p. 780. F. Fonthal, I. Torres, in 11th International Conferences on Advanced Materials, (ICAM 2009, Rio de Janeiro, Brazil 2009). M.Y. Ghannam, A.A. Abouelsaood, A.S. Alomar, J. Poortmans,Solar Ener. Mat. Solar Cell 94, 850 (2010) |
dc.rights.spa.fl_str_mv |
Derechos Reservados - Universidad Autónoma de Occidente |
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Atribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0) |
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Derechos Reservados - Universidad Autónoma de Occidente https://creativecommons.org/licenses/by-nc-nd/4.0/ Atribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0) http://purl.org/coar/access_right/c_abf2 |
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Journal of materials science. Materials in electronics |
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Fonthal Rico, Farukvirtual::1754-1Torres Chávez, Ivaldo1a4ce5e9e1238e7f0a7cdc2240db62f5Rodríguez, ÁngelUniversidad Autónoma de Occidente. Calle 25 115-85. Km 2 vía Cali-Jamundí2020-02-14T20:32:52Z2020-02-14T20:32:52Z2011-07Fonthal Rico, Faruk; Torres Chávez, Ivaldo; Rodriguez, Angel. Macroporous silicon: efficient antireflective layer on crystalline silicon. En: Journal of Materials Science: Materials in Electronics. Volumen 22, número 7, (julio 2011); páginas 895-9000957-4522http://red.uao.edu.co//handle/10614/11902https://www.researchgate.net/publication/242206332_Macroporous_silicon_Efficient_antireflective_layer_on_crystalline_silicondoi10.1007/s10854-010-0232-6A macroporous silicon layer (ma-PS) electrochemically grown on crystalline silicon surface can be used as an efficient antireflective layer in optical devices as antireflection coating. In this work, we presented the ma-PS layers fabricated on crystalline silicon (c-Si) n-type and p +-type, obtained by electrochemical etching. The morphology, porosity, thickness of ma-PS layer can be adjusted by controlling the electrochemical formation conditions. The optical behaviour of the antireflective coating over the solar spectrum is determined, resulting in very low values of the normalized reflectivity coefficient (below ~1%). The reflectivity measurements were evaluated at 45° in the different samples of the ma-PS/c-SiUna capa de silicio macroporoso (ma-PS) cultivada electroquímicamente sobre una superficie de silicio cristalino puede usarse como una capa antirreflectante eficaz en dispositivos ópticos como revestimiento antirreflectante. En este trabajo presentamos las capas de ma-PS fabricadas sobre silicio cristalino (c-Si) tipo ny tipo p +, obtenido por grabado electroquímico. La morfología, la porosidad y el grosor de la capa de ma-PS se pueden ajustar controlando las condiciones de formación electroquímica. Se determina el comportamiento óptico del revestimiento antirreflectante sobre el espectro solar, lo que da como resultado valores muy bajos del coeficiente de reflectividad normalizado (por debajo de ~ 1%). Las medidas de reflectividad se evaluaron a 45 ° en las diferentes muestras del ma-PS / c-Si.application/pdf895–900 páginasengJournal of materials science. Materials in electronicsJournal of Materials Science: Materials in Electronics. Volumen 22, número 7, (julio 2011); páginas 895-900A. Prasad, S. Balakrishnan, S.K. Jain, G.C. Jain, J. Electrochem.Soc. 129, 596 (1982).L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990.S. Yae et al., Solar Ener. 80, 701 (2006).B. Gonza´lez-Dı´az et al., Physica E 38, 215 (2007).T.D. James et al., in International Conferrence on Nanoscience and Nanotechnology, (ICONN 2006, Brisbane, Australia, 2006.M.J. Huang, C.R. Yang, Y.C. Chiou, R.T. Lee, Solar Ener. Mat.Solar Cell 92, 13526 (2008).N. Marrero, R. Guerrero-Lemus, B. Gonza´lez-Dı´az, D. Borchert,Thin Solid Film 517, 2648 (2009).A.M. Rossi, H.G. Bohn, Phys. Status Solidi. (a) 202, 1644 (2005).U. Gangopadhyay et al., Solar Ener. Mat. Solar Cell 91, 285(2007).F. Fonthal et al., in AIP Conferrence Proceedings VI RIAO/IX OPTILAS. vol. 992, (2008), p. 780.F. Fonthal, I. Torres, in 11th International Conferences on Advanced Materials, (ICAM 2009, Rio de Janeiro, Brazil 2009).M.Y. Ghannam, A.A. Abouelsaood, A.S. Alomar, J. Poortmans,Solar Ener. Mat. Solar Cell 94, 850 (2010)Derechos Reservados - Universidad Autónoma de Occidentehttps://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessAtribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0)http://purl.org/coar/access_right/c_abf2instname:Universidad Autónoma de Occidentereponame:Repositorio Institucional UAOPorous siliconCrystalline siliconElectrochemical etchingAntireflective coatingEtching timeMacroporous silicon: efficient antireflective layer on crystalline siliconArtículo de revistahttp://purl.org/coar/resource_type/c_6501http://purl.org/coar/resource_type/c_2df8fbb1Textinfo:eu-repo/semantics/articlehttp://purl.org/redcol/resource_type/ARTREFinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/version/c_970fb48d4fbd8a85Publication2bf30a66-1e41-42a5-8415-189ea7ccdfa8virtual::1754-12bf30a66-1e41-42a5-8415-189ea7ccdfa8virtual::1754-1https://scholar.google.com/citations?user=zxVYtU0AAAAJ&hl=envirtual::1754-10000-0002-9331-0491virtual::1754-1https://scienti.minciencias.gov.co/cvlac/visualizador/generarCurriculoCv.do?cod_rh=0000895857virtual::1754-1TEXTL5.pdf.txtL5.pdf.txtExtracted texttext/plain1https://red.uao.edu.co/bitstreams/88a96b0c-bfe2-43b7-aa5b-ba49f469680c/download68b329da9893e34099c7d8ad5cb9c940MD54A0295.pdf.txtA0295.pdf.txtExtracted texttext/plain12452https://red.uao.edu.co/bitstreams/8a320bb8-f53d-4b39-be72-8dc6fd1a8272/downloadd761e8589818cfbde321cfd0f8913ae1MD57THUMBNAILL5.pdf.jpgL5.pdf.jpgGenerated Thumbnailimage/jpeg3598https://red.uao.edu.co/bitstreams/e4fbdbaa-e5b5-4e6f-85d1-e2ac09680563/download09267c29e16bd799c6ca091226b71685MD55A0295.pdf.jpgA0295.pdf.jpgGenerated Thumbnailimage/jpeg13995https://red.uao.edu.co/bitstreams/fbce889d-ec61-4a64-8e4a-2ef87cc4b78e/downloada92ab2c8aa7f768c4c2a805474781a97MD58CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8805https://red.uao.edu.co/bitstreams/c559f67c-4dfd-47eb-8d6e-f3357d64e532/download4460e5956bc1d1639be9ae6146a50347MD52LICENSElicense.txtlicense.txttext/plain; charset=utf-81665https://red.uao.edu.co/bitstreams/8fafd81c-08b8-4d7f-bb0c-e5a327c09c9c/download20b5ba22b1117f71589c7318baa2c560MD53ORIGINALA0295.pdfA0295.pdfapplication/pdf680932https://red.uao.edu.co/bitstreams/36268f58-57bb-4dc3-aa88-0781828c4340/download98d286ac4b401165d6bbef2acbbb3b76MD5610614/11902oai:red.uao.edu.co:10614/119022024-03-14 08:56:24.61https://creativecommons.org/licenses/by-nc-nd/4.0/Derechos Reservados - Universidad Autónoma de Occidenteopen.accesshttps://red.uao.edu.coRepositorio Digital Universidad Autonoma de Occidenterepositorio@uao.edu.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 |