Methods employed in optical emission spectroscopy analysis: a review

In this work, different methods employed for the analysis of emission spectra are presented -- The proposal is to calculate the excitation temperature (Texc), electronic temperature (Te) and electron density (ne) for several plasma techniques used in the growth of thin films -- Some of these techniq...

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Autores:
Devia, D. M.
Rodriguez-Restrepo, L. V.
Restrepo-Parra, E.
Tipo de recurso:
Fecha de publicación:
2014
Institución:
Universidad EAFIT
Repositorio:
Repositorio EAFIT
Idioma:
eng
OAI Identifier:
oai:repository.eafit.edu.co:10784/5300
Acceso en línea:
http://hdl.handle.net/10784/5300
Palabra clave:
ESPECTROSCOPIA DE EMISIÓN
ANÁLISIS ESPECTRAL
ESPECTROSCOPIA DE PLASMA
ANÁLISIS ESPECTRAL
PELÍCULAS DELGADAS
Emission spectroscopy
Spectrum analysis
Plasma spectroscopy
Spectrum analysis
Thin films
Rights
License
Copyright (c) 2015 Ingeniería y Ciencia – ing.cienc.
Description
Summary:In this work, different methods employed for the analysis of emission spectra are presented -- The proposal is to calculate the excitation temperature (Texc), electronic temperature (Te) and electron density (ne) for several plasma techniques used in the growth of thin films -- Some of these techniques include magnetron sputtering and arc discharges -- Initially, some fundamental physical principles that support the Optical Emission Spectroscopy (OES) technique are described; then, some rules to consider during the spectral analysis to avoid ambiguities are listed -- Finally, some of the more frequently used spectroscopic methods for determining the physical properties of plasma are described