Effects of texturization due to chemical etching and laser on the optical properties of multicrystalline silicon for applications in solar cells
In this work we carried out the texturization of surfaces of multicrystalline silicon type-p in order to decrease the reflection of light on the surface, using the chemical etching method and then a treatment with laser. In the first method, it was immersed in solutions of HF:HNO3:H2O, HF:HNO3:CH3CO...
- Autores:
-
Vera Mellao, David
Mass, Julio
Manotas, M.
Cabanzo Hernandez, Rafael
Mejía Ospino, Enrique
- Tipo de recurso:
- Article of journal
- Fecha de publicación:
- 2016
- Institución:
- Corporación Universidad de la Costa
- Repositorio:
- REDICUC - Repositorio CUC
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.cuc.edu.co:11323/979
- Acceso en línea:
- https://hdl.handle.net/11323/979
https://repositorio.cuc.edu.co/
- Palabra clave:
- Etching
Hydrofluoric acid
Nanoscience
Nanotechnology
Optical properties
Polysilicon
Reflection
Scanning electron microscopy
Silicon solar cells
Solar cells
- Rights
- openAccess
- License
- Atribución – No comercial – Compartir igual
Summary: | In this work we carried out the texturization of surfaces of multicrystalline silicon type-p in order to decrease the reflection of light on the surface, using the chemical etching method and then a treatment with laser. In the first method, it was immersed in solutions of HF:HNO3:H2O, HF:HNO3:CH3COOH, HF:HNO3:H3PO4, in the proportion 14:01:05, during 30 seconds, 1, 2 and 3 minutes. Subsequently with a laser (ND:YAG) grids were generated beginning with parallel lines separated 50μm. The samples were analyzed by means of diffuse spectroscopy (UV-VIS) and scanning electron micrograph (SEM) before and after the laser treatment. The lowest result of reflectance obtained by HF:HNO3:H2O during 30 seconds, was of 15.5%. However, after applying the treatment with laser the reflectance increased to 17.27%. On the other hand, the samples treated (30 seconds) with acetic acid and phosphoric acid as diluents gives as a result a decrease in the reflectance values after applying the laser treatment from 21.97% to 17.79% and from 27.73% to 20.03% respectively. The above indicates that in some cases it is possible to decrease the reflectance using jointly the method of chemical etching and then a laser treatment. |
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