Computational study of Mn-doped GaN polar and non-polar surfaces

First-principles calculations were carried out in order to study the magnetic, electronic and structural properties of the Mn-doped polar GaN(0 0 0 1) and non-polar GaN(101¯0) and GaN(112¯0) surfaces, with the aim of refining the growth of thin films of this material. The results indicate that the s...

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Autores:
Martinez Castro, Oscar Segundo
González García, Alvaro
López Pérez, William
González Hernández, Rafael J.
Tipo de recurso:
Article of journal
Fecha de publicación:
2018
Institución:
Corporación Universidad de la Costa
Repositorio:
REDICUC - Repositorio CUC
Idioma:
eng
OAI Identifier:
oai:repositorio.cuc.edu.co:11323/1638
Acceso en línea:
http://hdl.handle.net/11323/1638
https://doi.org/10.1016/j.commatsci.2017.09.030
https://repositorio.cuc.edu.co/
Palabra clave:
First-principles
GaN surfaces
Magnetic materials
Mn-doped GaN
Surface magnetism
Rights
openAccess
License
Atribución – No comercial – Compartir igual
Description
Summary:First-principles calculations were carried out in order to study the magnetic, electronic and structural properties of the Mn-doped polar GaN(0 0 0 1) and non-polar GaN(101¯0) and GaN(112¯0) surfaces, with the aim of refining the growth of thin films of this material. The results indicate that the surfaces present magnetization of approximately 4.0 μβ/Mn atom, in agreement with the recently reported theoretical and experimental results. Calculations of surface formation energy indicate that Mn atoms are incorporated into top surface layers (first and second) of GaN, being the MnGa incorporation in the polar surface more energetically favourable than in the nonpolar surfaces. In addition, it was observed that the magnetic coupling between the Mn impurities depends on the surface orientation, which could be useful for the design of magnetic nanodevices.