Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study

Structural, mechanical and electronic properties of two-dimensional single-layer hexagonal structures in the (1 1 1) crystal plane of IIIAs-ZnS systems (III = B, Ga and In) are studied by first-principles calculations based on density functional theory (DFT). Elastic and phonon dispersion relation d...

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Autores:
González García, Alvaro
López Pérez, William
Rivera Julio, Jagger
Peteers, F. M.
Mendoza Estrada, Victor Julio
González Hernández, Rafael J.
Tipo de recurso:
Article of journal
Fecha de publicación:
2018
Institución:
Corporación Universidad de la Costa
Repositorio:
REDICUC - Repositorio CUC
Idioma:
eng
OAI Identifier:
oai:repositorio.cuc.edu.co:11323/1501
Acceso en línea:
https://hdl.handle.net/11323/1501
https://doi.org/10.1016/j.commatsci.2017.12.050
https://repositorio.cuc.edu.co/
Palabra clave:
Arsenide
Density functional theory
Mechanical properties
Two-dimensional single and few-layer hexagonal structures
Rights
openAccess
License
Atribución – No comercial – Compartir igual
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dc.title.eng.fl_str_mv Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
title Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
spellingShingle Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
Arsenide
Density functional theory
Mechanical properties
Two-dimensional single and few-layer hexagonal structures
title_short Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
title_full Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
title_fullStr Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
title_full_unstemmed Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
title_sort Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (1 1 1) binary compounds: An ab-initio study
dc.creator.fl_str_mv González García, Alvaro
López Pérez, William
Rivera Julio, Jagger
Peteers, F. M.
Mendoza Estrada, Victor Julio
González Hernández, Rafael J.
dc.contributor.author.spa.fl_str_mv González García, Alvaro
López Pérez, William
Rivera Julio, Jagger
Peteers, F. M.
Mendoza Estrada, Victor Julio
González Hernández, Rafael J.
dc.subject.eng.fl_str_mv Arsenide
Density functional theory
Mechanical properties
Two-dimensional single and few-layer hexagonal structures
topic Arsenide
Density functional theory
Mechanical properties
Two-dimensional single and few-layer hexagonal structures
description Structural, mechanical and electronic properties of two-dimensional single-layer hexagonal structures in the (1 1 1) crystal plane of IIIAs-ZnS systems (III = B, Ga and In) are studied by first-principles calculations based on density functional theory (DFT). Elastic and phonon dispersion relation display that 2D h-IIIAs systems (III = B, Ga and In) are both mechanical and dynamically stable. Electronic structures analysis show that the semiconducting nature of the 3D-IIIAs compounds is retained by their 2D single layer counterpart. Furthermore, density of states reveals the influence of σ and π bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Calculations of elastic constants show that the Young's modulus, bulk modulus and shear modulus decrease for 2D h-IIIAs binary compounds as we move down on the group of elements of the periodic table. In addition, as the bond length between the neighboring cation-anion atoms increases, the 2D h-IIIAs binary compounds display less stiffness and more plasticity. Our findings can be used to understand the contribution of the σ and π bonding in the most stable geometry (planar o buckled) for 2D h-IIIAs systems. Structural and electronic properties of h-IIIAs systems as a function of the number of layers have been also studied. It is shown that h-BAs keeps its planar geometry while both h-GAs and h-InAs retained their buckled ones obtained by their single layers. Bilayer h-IIIAs present the same bandgap nature of their counterpart in 3D. As the number of layers increase from 2 to 4, the bandgap width for layered h-IIIAs decreases until they become semimetal or metal. Interestingly, these results are different to those found for layered h-GaN. The results presented in this study for single and few-layer h-IIIAs structures could give some physical insights for further theoretical and experimental studies of 2D h-IIIV-like systems.
publishDate 2018
dc.date.accessioned.none.fl_str_mv 2018-11-20T20:26:29Z
dc.date.available.none.fl_str_mv 2018-11-20T20:26:29Z
dc.date.issued.none.fl_str_mv 2018
dc.type.spa.fl_str_mv Artículo de revista
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dc.type.content.spa.fl_str_mv Text
dc.type.driver.spa.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.issn.spa.fl_str_mv 09270256
dc.identifier.uri.spa.fl_str_mv https://hdl.handle.net/11323/1501
dc.identifier.doi.spa.fl_str_mv https://doi.org/10.1016/j.commatsci.2017.12.050
dc.identifier.instname.spa.fl_str_mv Corporación Universidad de la Costa
dc.identifier.reponame.spa.fl_str_mv REDICUC - Repositorio CUC
dc.identifier.repourl.spa.fl_str_mv https://repositorio.cuc.edu.co/
identifier_str_mv 09270256
Corporación Universidad de la Costa
REDICUC - Repositorio CUC
url https://hdl.handle.net/11323/1501
https://doi.org/10.1016/j.commatsci.2017.12.050
https://repositorio.cuc.edu.co/
dc.language.iso.none.fl_str_mv eng
language eng
dc.rights.spa.fl_str_mv Atribución – No comercial – Compartir igual
dc.rights.accessrights.spa.fl_str_mv info:eu-repo/semantics/openAccess
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rights_invalid_str_mv Atribución – No comercial – Compartir igual
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.publisher.spa.fl_str_mv Computational Materials Science
institution Corporación Universidad de la Costa
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spelling González García, AlvaroLópez Pérez, WilliamRivera Julio, JaggerPeteers, F. M.Mendoza Estrada, Victor JulioGonzález Hernández, Rafael J.2018-11-20T20:26:29Z2018-11-20T20:26:29Z201809270256https://hdl.handle.net/11323/1501https://doi.org/10.1016/j.commatsci.2017.12.050Corporación Universidad de la CostaREDICUC - Repositorio CUChttps://repositorio.cuc.edu.co/Structural, mechanical and electronic properties of two-dimensional single-layer hexagonal structures in the (1 1 1) crystal plane of IIIAs-ZnS systems (III = B, Ga and In) are studied by first-principles calculations based on density functional theory (DFT). Elastic and phonon dispersion relation display that 2D h-IIIAs systems (III = B, Ga and In) are both mechanical and dynamically stable. Electronic structures analysis show that the semiconducting nature of the 3D-IIIAs compounds is retained by their 2D single layer counterpart. Furthermore, density of states reveals the influence of σ and π bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Calculations of elastic constants show that the Young's modulus, bulk modulus and shear modulus decrease for 2D h-IIIAs binary compounds as we move down on the group of elements of the periodic table. In addition, as the bond length between the neighboring cation-anion atoms increases, the 2D h-IIIAs binary compounds display less stiffness and more plasticity. Our findings can be used to understand the contribution of the σ and π bonding in the most stable geometry (planar o buckled) for 2D h-IIIAs systems. Structural and electronic properties of h-IIIAs systems as a function of the number of layers have been also studied. It is shown that h-BAs keeps its planar geometry while both h-GAs and h-InAs retained their buckled ones obtained by their single layers. Bilayer h-IIIAs present the same bandgap nature of their counterpart in 3D. As the number of layers increase from 2 to 4, the bandgap width for layered h-IIIAs decreases until they become semimetal or metal. Interestingly, these results are different to those found for layered h-GaN. The results presented in this study for single and few-layer h-IIIAs structures could give some physical insights for further theoretical and experimental studies of 2D h-IIIV-like systems.González García, Alvaro-577111cf-cbe5-4fa5-8fd1-503c4bbf040e-0López Pérez, William-4357fa0d-5aec-4610-a554-3231f7337f5b-0Rivera Julio, Jagger-2bf8e161-a148-4c0b-a134-20b9a8d5da04-0Peteers, F. 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