Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study

We have carried out first-principles total-energy calculations in order to study the electronic structure and thermodynamic properties of In 1-xBxP semiconducting alloys using the GGA and LDA formalisms within density functional theory (DFT) with a plane-wave ultrasoft pseudopotential scheme. We hav...

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Autores:
González García, Alvaro
López Pérez, William
Palacio Mozo, Rommel
González Hernández, Rafael J.
Tipo de recurso:
Article of journal
Fecha de publicación:
2014
Institución:
Corporación Universidad de la Costa
Repositorio:
REDICUC - Repositorio CUC
Idioma:
eng
OAI Identifier:
oai:repositorio.cuc.edu.co:11323/866
Acceso en línea:
https://hdl.handle.net/11323/866
https://repositorio.cuc.edu.co/
Palabra clave:
Ab-Initio Calculations
Alloys
Electronic Structure
Thermodynamic Properties
Rights
openAccess
License
Atribución – No comercial – Compartir igual
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dc.title.eng.fl_str_mv Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
title Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
spellingShingle Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
Ab-Initio Calculations
Alloys
Electronic Structure
Thermodynamic Properties
title_short Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
title_full Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
title_fullStr Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
title_full_unstemmed Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
title_sort Thermodynamic Properties Of In1-xBxP Semiconducting Alloys: A First-Principles Study
dc.creator.fl_str_mv González García, Alvaro
López Pérez, William
Palacio Mozo, Rommel
González Hernández, Rafael J.
dc.contributor.author.spa.fl_str_mv González García, Alvaro
López Pérez, William
Palacio Mozo, Rommel
González Hernández, Rafael J.
dc.subject.eng.fl_str_mv Ab-Initio Calculations
Alloys
Electronic Structure
Thermodynamic Properties
topic Ab-Initio Calculations
Alloys
Electronic Structure
Thermodynamic Properties
description We have carried out first-principles total-energy calculations in order to study the electronic structure and thermodynamic properties of In 1-xBxP semiconducting alloys using the GGA and LDA formalisms within density functional theory (DFT) with a plane-wave ultrasoft pseudopotential scheme. We have also taken into account the correlation effects of the 3d-In orbitals within the LDA+U method to calculate the band-gap energy. We use special quasirandom structures to investigate the effect of the substituent concentration on structural parameter, band gap energy, mixing enthalpy and phase diagram of In1-xBxP alloys for x = 0, 0.25, 0.50, 0.75 and 1. It is found that the lattice parameters of the In 1-xBxP alloys decrease with B-concentration, showing a negative deviation from Vegard's law, while the bulk modulus increases with composition x, showing a large deviation from the linear concentration dependence (LCD). The calculated band structure presents a similar behavior for any B-composition using LDA, PBE or LDA+U approach. Our results predict that the band-gap shows a x-dependent nonlinear behavior. Calculated band gaps also shows a transition from (Γ→Γ)-direct to (Γ→Δ)- indirect at x = 0.611 and 0.566 for LDA and PBE functionals, respectively. Our calculations predict that the In1-xBxP alloy to be stable at unusual high temperature for both LDA and PBE potentials. © 2014 Elsevier B.V. All rights reserved.
publishDate 2014
dc.date.issued.none.fl_str_mv 2014-08
dc.date.accessioned.none.fl_str_mv 2018-11-10T20:25:25Z
dc.date.available.none.fl_str_mv 2018-11-10T20:25:25Z
dc.type.spa.fl_str_mv Artículo de revista
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dc.type.content.spa.fl_str_mv Text
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dc.identifier.issn.spa.fl_str_mv 09270256
dc.identifier.uri.spa.fl_str_mv https://hdl.handle.net/11323/866
dc.identifier.instname.spa.fl_str_mv Corporación Universidad de la Costa
dc.identifier.reponame.spa.fl_str_mv REDICUC - Repositorio CUC
dc.identifier.repourl.spa.fl_str_mv https://repositorio.cuc.edu.co/
identifier_str_mv 09270256
Corporación Universidad de la Costa
REDICUC - Repositorio CUC
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dc.language.iso.none.fl_str_mv eng
language eng
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dc.rights.spa.fl_str_mv Atribución – No comercial – Compartir igual
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http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.publisher.spa.fl_str_mv Computational Materials Science
institution Corporación Universidad de la Costa
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spelling González García, AlvaroLópez Pérez, WilliamPalacio Mozo, RommelGonzález Hernández, Rafael J.2018-11-10T20:25:25Z2018-11-10T20:25:25Z2014-0809270256https://hdl.handle.net/11323/866Corporación Universidad de la CostaREDICUC - Repositorio CUChttps://repositorio.cuc.edu.co/We have carried out first-principles total-energy calculations in order to study the electronic structure and thermodynamic properties of In 1-xBxP semiconducting alloys using the GGA and LDA formalisms within density functional theory (DFT) with a plane-wave ultrasoft pseudopotential scheme. We have also taken into account the correlation effects of the 3d-In orbitals within the LDA+U method to calculate the band-gap energy. We use special quasirandom structures to investigate the effect of the substituent concentration on structural parameter, band gap energy, mixing enthalpy and phase diagram of In1-xBxP alloys for x = 0, 0.25, 0.50, 0.75 and 1. It is found that the lattice parameters of the In 1-xBxP alloys decrease with B-concentration, showing a negative deviation from Vegard's law, while the bulk modulus increases with composition x, showing a large deviation from the linear concentration dependence (LCD). The calculated band structure presents a similar behavior for any B-composition using LDA, PBE or LDA+U approach. Our results predict that the band-gap shows a x-dependent nonlinear behavior. Calculated band gaps also shows a transition from (Γ→Γ)-direct to (Γ→Δ)- indirect at x = 0.611 and 0.566 for LDA and PBE functionals, respectively. Our calculations predict that the In1-xBxP alloy to be stable at unusual high temperature for both LDA and PBE potentials. © 2014 Elsevier B.V. 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