Reversible electron pumping and negative differential resistance in two-step barrier diode under strong terahertz ac field
A computational study, employing a Floquet-transfer-matrix approach, of the current in a model two-step barrier diode under intense ac fields in the terahertz range is reported. It is demonstrated that the field pumps a net tunnel current through the structure, which can exhibit a negative different...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2011
- Institución:
- Ministerio de Ciencia, Tecnología e Innovación
- Repositorio:
- Repositorio Minciencias
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.minciencias.gov.co:20.500.14143/21670
- Acceso en línea:
- https://repositorio.minciencias.gov.co/handle/20.500.14143/21670
- Palabra clave:
- Teoría molecular
Conductores eléctricos
Teoría de la información
Análisis de sistemas
Modelos matemáticos
Electrones -- Partículas
- Rights
- License
- http://purl.org/coar/access_right/c_f1cf
| Summary: | A computational study, employing a Floquet-transfer-matrix approach, of the current in a model two-step barrier diode under intense ac fields in the terahertz range is reported. It is demonstrated that the field pumps a net tunnel current through the structure, which can exhibit a negative differential resistance and whose direction can be controlled by the ac-bias amplitude. These behaviors are seen to originate from the inelastic scattering of incoming electrons by absorption or emission of field quanta from a shape resonance present in the field-free structure. |
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